BAT85 [LGE]

Small Signal Schottky Diodes; 小信号肖特基二极管
BAT85
型号: BAT85
厂家: LGE    LGE
描述:

Small Signal Schottky Diodes
小信号肖特基二极管

小信号肖特基二极管
文件: 总2页 (文件大小:146K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAT85  
Small Signal Schottky Diodes  
VOLTAGE RANGE: 30 V  
CURRENT: 0.2 A  
Features  
For general purpose applications  
DO - 35(GLASS)  
This diode features very low turn-on voltage  
and fast switching. These devices are protected  
by a PN junction guard ring against excessive  
voltage, such as electrostatic discharges  
Mechanical Data  
Case:JEDEC DO--35,glass case  
Polarity: Color band denotes cathode end  
Weight: Approx. 0.13 gram  
Dimensions in millimeters  
ABSOLUTE RATINGS  
Value  
30.0  
200 1)  
300 1)  
5 1)  
200 1)  
UNITS  
Symbols  
V
Continuous reverse voltage  
Forw ard continuous current  
Peak forw ard current  
Surge forw ard current  
Pow er dissipation  
VR  
IF  
mA  
mA  
A
@
@
@
TA=25  
TA=25  
IFM  
IFSM  
Ptot  
TJ  
tp<1s,TA=25  
mW  
@ TA=65  
125  
Junction temperature  
c-55 ---+ 125  
c-55 ---+ 150  
Ambient operating temperature range  
Storage temperature range  
TA  
TSTG  
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
ELECTRICAL CHARACTERISTICS  
Symbols  
VR  
Typ.  
Max.  
Min.  
30.0  
UNITS  
Reverse breakdow n voltage  
V
Forw ard voltage  
Pulse test tp<300 s, <2%  
@ IF=0.1mA  
0.24  
0.32  
0.4  
V
V
V
V
V
@ IF=1mA  
VF  
@ IF=10mA  
0.5  
@ IF=30mA  
@ IF=100mA  
0.8  
2.0  
Leakage current VR=25V  
IR  
CJ  
trr  
A
10  
5
4301)  
Junction capacitance at VR=1V,f=1MHz  
Reverse recovery time @ IF=10mA,IR=10mA,IR=1mA  
Thermal resistance junction to ambient  
pF  
ns  
Rθ  
/W  
JA  
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature  
http://www.luguang.cn  
mail:lge@luguang.cn  
BAT85  
Small Signal Schottky Diodes  
Ratings AND Charactieristic Curves  
FIG.1-- ADMISSIBLEPOWERDISSIPATIONVS. AMBIENT  
TEMPERATURE  
FIG. 2--TYPICAL INSTANTANEOUS FORWORD  
CHARACTERISTICS  
1 0 0 0  
T J = 1 2 5  
200  
100  
1 0 0  
T J = 25  
1 0  
1
T J = -40  
0 .1  
0 .0 1  
0
0
0 .2 0 .4 0 .6 0 .8 1 .0 1 .2  
100  
200  
TA- Ambient temperature( )  
V - Forward Voltage ( V )  
F
FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS  
FIG.4 -- TYPICAL JUNCTION CAPACITANCE  
14  
12  
1 0 0 0  
T J = 1 2 5  
1 0 0  
10  
8
1 0 0  
1 0  
7 5  
6
4
2
5 0  
1
2 5  
0 .1  
0 .0 1  
0
5
10 15  
20 25 30  
0
5
1 0  
1 5 2 0  
2 5  
3 0  
V - Reverse voltage ( V )  
R
V - Reverse voltage ( V )  
R
http://www.luguang.cn  
mail:lge@luguang.cn  

相关型号:

BAT85,113

BAT85 - Schottky barrier single diode DO-34 2-Pin
NXP

BAT85,133

BAT85 - Schottky barrier single diode DO-34 2-Pin
NXP

BAT85-AP

Rectifier Diode, Schottky, 1 Element, 0.2A, Silicon, DO-35, GLASS PACKAGE-2
MCC

BAT85-BP

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
MCC

BAT85-TAP

DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
VISHAY

BAT85-TP

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
MCC

BAT85-TP-TP

Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-35, GLASS PACKAGE-2
MCC

BAT85-TR

DIODE 0.2 A, SILICON, SIGNAL DIODE, DO-35, GLASS PACKAGE-2, Signal Diode
VISHAY

BAT85.133

Schottky barrier single diode
NXP

BAT85/A52A

0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2
NXP

BAT85/A52R

0.2A, 30V, SILICON, SIGNAL DIODE, DO-34, HERMETIC SEALED, GLASS PACKAGE-2
NXP

BAT85136

0.2A, SILICON, SIGNAL DIODE, DO-34
NXP