5A200 [LGE]

Plastic Silicon Rectifiers; 塑料硅整流
5A200
型号: 5A200
厂家: LGE    LGE
描述:

Plastic Silicon Rectifiers
塑料硅整流

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5A50-5A1000  
Plastic Silicon Rectifiers  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 5.0 A  
DO - 27  
Features  
Low cost  
Diffused junction  
Low leakage  
Low forward voltage drop  
High current capability  
Easily cleaned witn Freon,Alcohol,lsopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
Mechanical Data  
Dimensions in millimeters  
Case:JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.041 ounces,1.15 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at  
ambient temperature unless otherwise specified.  
25  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
5A  
50  
5A  
100  
5A  
200  
5A  
400  
5A  
600  
5A  
800  
5A  
1000  
UNITS  
V
V
V
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
VRRM  
VRMS  
VDC  
100  
1000  
Maximum DC blocking voltage  
Maximum average forw ard rectified current  
A
5.0  
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
300.0  
1.2  
A
8.3ms single half-sine-w ave  
superimposed on rated load @TJ=125  
Maximum instantaneous forw ard voltage  
@ 5.0 A  
V
A
VF  
Maximum reverse current  
@TA=25  
10.0  
100.0  
IR  
at rated DC blocking voltage @TA=100  
pF  
80  
Typical junction capacitance  
Typical thermal resistance  
(Note1)  
(Note2)  
CJ  
15  
Rθ  
/W  
JA  
Operating junction temperature range  
Storage temperature range  
- 55 ---- + 150  
- 55 ---- + 150  
TJ  
TSTG  
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.  
2. Thermal resistance from junction to ambient.  
http://www.luguang.cn  
mail:lge@luguang.cn  
5A50-5A1000  
Plastic Silicon Rectifiers  
Ratings AND Charactieristic Curves  
FIG.1 -- FORWARD DERATING CURVE  
FIG.2 -- TYPICAL FORWARD CHARACTERISTICS  
100  
10  
8
7
4
2
6
5
4
3
1.0  
0.4  
0.2  
0.1  
2
S in g le P h a se  
H a lf  
W a ve 6 0 H Z  
0.06  
R e s is tiv e o r  
In d u ctiv e L o a d  
TJ=25  
0.04  
1
0
Pulse Width=300uS  
0.02  
0.01  
0
2 5  
5 0  
7 5  
1 0 0 1 2 5 1 5 0 1 7 5  
0.6  
0.8 1.0  
1.2 1.4 1.6  
AMBIENT TEMPERATURE,  
INSTANTANEOUS FORWARD VOLTAGE, VOLTS  
FIG.3 -- MAXIMUM NON-REPETITIREFORWARD  
SURGE CURRENT  
FIG.4 -- TYPICAL JUNCTION CAPACITANCE  
200  
400  
300  
f=1MHz  
TJ=25  
TJ=125  
8.3ms Single Half  
Sine-Wave  
100  
200  
100  
0
10  
.1 .2  
1
2
4
8 10  
20  
40 60 80 100  
.4  
1.0  
2
4
10 20 40 100  
NUMBER OF CYCLES AT60Hz  
REVERSE VOLTAGE, VOLTS  
http://www.luguang.cn  
mail:lge@luguang.cn  

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