2SC2785 [LGE]
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LGE 
2SC2785
TO-92S Transistor (NPN)
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
1 2 3
Features
High voltage VCEO:50V
Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA)
Complementary to 2SA1175 PNP transistor
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
VCBO
Value
Units
Parameter
60
V
Collector-Base Voltage
VCEO
VEBO
IC
Collector-Emitter Voltage
Emitter-Base Voltage
50
5
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.1
A
Dimensions in inches and (millimeters)
PC
0.25
150
W
℃
℃
TJ
Tstg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
60
50
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=100μA, IC=0
V
V
ICBO
IEBO
VCB=60V, IE=0
VEB=5V, IC=0
0.1
0.1
600
μA
μA
Emitter cut-off current
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
VCE=6V, IC=1mA
110
50
DC current gain
VCE=6V, IC=0.1mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
0.3
1
V
V
0.65
V
Transition frequency
fT
VCE=6V, IC=10mA
150
MHz
pF
dB
Collector output capacitance
Noise figure
Cob
VCB=6V, IE=0,f=1MHz
VCE=6V, Ic=0.1mA,f=1KHZ, Rg=2KΩ
4
NF
15
CLASSIFICATION OF hFE(1)
Rank
RF
JF
HF
FF
EF
250-400
KF
300-600
110-180
135-220
170-270
200-320
Range
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
2SC2785
TO-92S Transistor (NPN)
Typical Characteristics
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
2SC2785
TO-92S Transistor (NPN)
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
相关型号：
2SC2786-KF
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Very High Frequency Band, Silicon, NPN
NEC
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