2SC2655 [LGE]
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| 型号： | 2SC2655 |
| 厂家： | 
LGE |
| 描述： | 暂无描述 |
| 文件： | 总3页 (文件大小：661K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SC2655
TO-92MOD Transistor (NPN)
1.EMITTER
2.COLLECTOR
3.BASE
TO-92MOD
1
2
3
5.800
6.200
8.400
8.800
0.900
1.100
Features
0.400
0.600
Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A)
High speed switching time: tstg=1μs(Typ.)
Complementary to 2SA1020
13.800
14.200
1.500 TYP
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
2.900
3.100
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Symbol
Units
0.000
0.380
1.600
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
50
50
V
0.400
0.500
4.700
5.100
V
5
V
1.730
2.030
4.000
Collector Current –Continuous
Collector Power Dissipation
Junction Temperature
2
A
Dimensions in inches and (millimeters)
PC
0.9
W
℃
℃
TJ
150
-55-150
Tstg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
50
50
5
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CBO IC=100μA,IE=0
V(BR)CEO IC=10mA,IB=0
V(BR)EBO IE=100μA,IC=0
V
V
ICBO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=50V,IE=0
1
1
μA
μA
Emitter cut-off current
VEB=5V,IC=0
VCE=2V,IC=500mA
VCE=2V,IC=1.5A
IC=1A,IB=0.05A
IC=1A,IB=0.05A
VCE=2V,IC=0.5A
VCB=10V,IE=0,f=1MHz
70
40
240
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
0.5
1.2
V
V
100
30
MHz
pF
Collector output capacitance
Tune on Time
Cob
ton
0.15
2
V
CC=30V,Ic=1A,
Switch time
μs
Storage Time
Fall Time
tstg
IB1=-IB2=0.05A
tf
0.15
CLASSIFICATION OF hFE
(1)
Rank
O
Y
Range
70-140
120-240
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
2SC2655
TO-92MOD Transistor (NPN)
Typical Characteristics
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
2SC2655
TO-92MOD Transistor (NPN)
http://www.lgesemi.com
Revision:20170701-P1
mail:lge@lgesemi.com
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