2SC1740S [LGE]

暂无描述;
2SC1740S
型号: 2SC1740S
厂家: LGE    LGE
描述:

暂无描述

晶体管
文件: 总3页 (文件大小:611K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
2SC1740S  
TO-92S Transistor (NPN)  
1. EMITTER  
TO-92S  
2. COLLECTOR  
3. BASE  
1 2 3  
Features  
Low Cob  
—
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
60  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
V
7
V
Collector Current –Continuous  
Collector Power Dissipation  
Junction Temperature  
150  
300  
150  
-55-150  
mA  
mW  
PC  
TJ  
Tstg  
Storage Temperature  
Dimensions in inches and (millimeters)  
ELECTRICAL CHARACTERISTICS (TA=25  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
60  
50  
7
TYP  
MAX  
UNIT  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=50μA , IE=0  
V(BR)CEO IC=1mA, IB=0  
V(BR)EBO IE=50μA, IC=0  
V
V
ICBO  
IEBO  
hFE  
VCB=60V, IE=0  
0.1  
0.1  
560  
0.4  
μA  
μA  
Emitter cut-off current  
VEB=7V, IC=0  
DC current gain  
VCE=6V, IC=1mA  
120  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat)  
fT  
IC=50mA,IB=5mA  
VCE=12V, IC=-2mA,f=100MHz  
VCB=12V,IE=0,f=1MHz  
V
180  
2
MHz  
pF  
Collector output capacitance  
Cob  
3.5  
CLASSIFICATION OF hFE  
Rank  
Q
R
S
Range  
120-270  
180-390  
270-560  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  
2SC1740S  
TO-92S Transistor (NPN)  
Typical Characteristics  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  
2SC1740S  
TO-92S Transistor (NPN)  
http://www.lgesemi.com  
Revision:20170701-P1  
mail:lge@lgesemi.com  

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