1N5062 [LGE]
Plastic Silicon Rectifier; 塑料硅整流
| 型号： | 1N5062 |
| 厂家： | 
LGE |
| 描述： | Plastic Silicon Rectifier |
| 文件： | 总2页 (文件大小：219K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5059-1N5062
Plastic Silicon Rectifier
VOLTAGE RANGE: 200---800 V
CURRENT: 2.0 A
Features
DO - 15
Low cost
Diffused junction
Glass passivated chips
Low forward voltage drop
High crrent capability
Easily cleaned with Freon,Alcohol, lsopropand
and similar solvents
Mechanical Data
Case: JEDEC DO-15, molded plastic
Terminals: Axial leads,solderable per MIL-STD
-202,Method 208
Dimensions in millimeters
Polarity: Color band denotes cathode
Weight: 0.014 ounces, 0.39grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N5059
1N5060
1N5061
1N5062
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
V
V
V
VRRM
VRMS
VDC
200
140
200
400
280
400
600
420
600
800
560
800
Maximum DC blocking voltage
Maximum average forw ard rectified current
A
2.0
IF(AV)
9.5mm lead length, @TA=50
Peak forw ard surge current
10ms single half-sine-w ave
50.0
1.2
1.15
5.0
A
IFSM
superimposed on rated load
@TJ=125
@1.0A
@ 2.5A
Maximum instantaneous
VF
IR
V
forw ard voltage
Maximum reverse current
@TA=25
A
at rated DC blocking voltage @TA=150
100
4.0
40
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
trr
CJ
µ s
(Note2)
(Note3)
pF
45
RθJA
TJ
K/W
Operating junction temperature range
- 55 ----- + 175
- 55 ----- + 175
Storage temperature range
TSTG
NOTE: 1.Measured with IF=0.5A, IR=1A, Irr=0.25A.
2. Measured at 1.0MH and applied rev erse v oltage of 0V DC.
3. Thermal resistance from junction to ambient.
Z
http://www.luguang.cn
mail:lge@luguang.cn
1N5059-1N5062
Plastic Silicon Rectifier
Ratings AND Charactieristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
trr
50
N 1.
10
N 1.
+0.5A
D.U.T.
0
(+)
PULSE
GENERATOR
(NOTE2)
-0.25A
25VDC
(approx)
(-)
OSCILLOSCOPE
(NOTE1)
1
NONIN-
DUCTIVE
-1.0A
1cm
SETTIMEBASEFOR2.0 µ s/cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCEIMPEDANCE=50
.
FIG.2 -- TYPICAL FORWARDCHARACTERISTIC
FIG.3 -- FORWARDDERATINGCURVE
20
10
2.0
1.6
1.2
TJ=25
Pulse Width=300µS
1.0
Single Phase
0.8
Half Wave 50H
Z
Resistive or
Inductive Load
0.1
0.4
0
0
25
50
75
100
125
150
175
0.01
0.4
0.6
0.8
1.0
1.2
1.4
AMBIENTTEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.4 -- PEAK FORWARD SURGE CURRENT
FIG.5--TYPICAL JUNCTION CAPACITANCE
200
100
50
60
40
℃
TJ=25
40
30
10ms Single Half
Sine-Wave
20
10
6
20
10
0
4
TJ=25
2
1
1
5
10
50 100
0.1 0.2 0.4
1
2
4
10 20
40
100
NUMBEROF CYCLES AT50Hz
REVERSE VOLTAGE,VOLTS
http://www.luguang.cn
mail:lge@luguang.cn
相关型号：
1N5062GP-E3
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, LEAD FREE, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-E3/4F
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-E3/4G
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-E3/53
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY
1N5062GP-E3/62
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-E3/70
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-E3/72
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-E3/91
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP-HE3/73
DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AC, ROHS COMPLIANT, PLASTIC, DO-15, 2 PIN, Signal Diode
VISHAY
1N5062GP/100
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY
1N5062GP/23
Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, DO-204AC, PLASTIC, DO-15, 2 PIN
VISHAY
©2020 ICPDF网 联系我们和版权申明