S-M8050HQLT3G [LEIDITECH]
General Purpose Transistors NPN Silicon;
| 型号： | S-M8050HQLT3G |
| 厂家： | 
Leiditech |
| 描述： | General Purpose Transistors NPN Silicon |
| 文件： | 总3页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M8050HQLTIG
Series
S-M8050HQLTIG
Series
General Purpose Transistors
NPN Silicon
Dimensions SOT-23
FEATURE
ƽHigh current capacity in compact package.
IC =1.5 A.
ƽEpitaxial planar type.
ƽNPN complement: L8050H
Pb-Free Package is available.
ƽ
S- Prefix for Automotive and Other Applications Requiring Unique Site
ƽ
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Pin Configuration
DEVICE MARKING AND ORDERING INFORMATION
Shipping
Device
Marking
COLLECTOR
3
M8050HPLT1G
S-M8050HPLT1G
3000/Tape&Reel
1HA
1HA
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
M8050HPLT3G
M8050HQLT1G
M8050HQLT3G
S-M8050HPLT3G
S-M8050HQLT1G
S-M8050HQLT3G
1
BASE
1HC
1HC
2
EMITTER
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
M8050HRLT1G
S-M8050HRLT1G
1HE
1HE
1HG
1HG
M8050HRLT3G
M8050HSLT1G
M8050HSLT3G
S-M8050HRLT3G
S-M8050HSLT1G
S-M8050HSLT3G
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
VCEO
VCBO
VEBO
25
40
V
V
5
V
I
C
1500
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-5 Board,(1)
P
D
T
A
=25°C
225
1.8
mW
Derate above 25°C
mW/°C
Thermal Resistance,Junction to Ambient
RθJ A
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
RθJ A
417
°C/W
°C
T
j,
T
S
t
g
-55 to +150
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
01.06.2015
Rev :
1/3
www.leiditech.com
M8050HQLTIG
Series
S-M8050HQLTIG
Series
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
(IC=1.0mA)
–
–
–
–
–
–
V(BR)CEO
V(BR)EBO
V(BR)CBO
25
5
V
V
V
Emitter-Base Breakdown Voltage
(IE=100µΑ)
Collector-Base Breakdown Voltage
(IC=100µΑ)
40
Collector Cutoff Current (VCB=35V)
Emitter Cutoff Current (VEB=4V)
ELECTRICAL CHARACTERISTICS (T
Characteristic
ICBO
IEBO
–
–
–
–
150
150
nA
nA
A
=25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
IC=100mA,VCE=1V
hFE
100
-
-
600
0.5
Collector-Emitter Saturation Voltage
(IC=800mA IB=80mA)
VCE(S)
-
V
NOTE :
*
P
Q
R
S
hFE
100~200
150~300
200~400
300~600
01.06.2015
Rev :
2/3
www.leiditech.com
M8050HQLTIG
Series
S-M8050HQLTIG
Series
SOT-23 Package Outline & Dimensions
Millimeters
Inches
Nom.
0.040
0.002
0.18
Symbol
Min. Nom. Max.
0.89 1.00 1.11
0.01 0.06 0.10
0.37 0.44 0.50
0.09 0.13 0.18
2.80 2.90 3.04
1.20 1.30 1.40
1.78 1.90 2.04
0.35 0.54 0.69
2.10 2.40 2.64
Min.
0.035
0.001
0.15
Max.
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.029
0.104
A
A1
b
c
0.003
0.110
0.047
0.070
0.014
0.083
0.005
0.114
0.051
0.075
0.021
0.094
D
E
e
L
HE
Soldering Footprint
Symbol
Millimeters
0.80
Inches
0.031
0.037
0.035
0.079
X
X1
Y
0.95
0.90
Z
2.00
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
01.06.2015
Rev :
3/3
www.leiditech.com
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