S-LBC857CLT1G [LEIDITECH]
General Purpose Transistors PNP Silicon;型号: | S-LBC857CLT1G |
厂家: | Leiditech |
描述: | General Purpose Transistors PNP Silicon |
文件: | 总7页 (文件大小:666K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
LBC857CLT1G
Series
S-LBC857CLT1G
Series
General Purpose Transistors
PNP Silicon
• Moisture Sensitivity Level: 1
SOT–23
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
•
We declare that the material of product compliance with
RoHS requirements.
3
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
LBC856
LBC857
V
CEO
V
CBO
V
EBO
–65
–45
–30
V
3
COLLECTOR
LBC858, LBC859
Collector-Base Voltage
LBC856
LBC857
–80
–50
–30
V
1
BASE
LBC858, LBC859
2
Emitter–Base Voltage
–5.0
V
EMITTER
Collector Current – Continuous
THERMAL CHARACTERISTICS
Characteristic
I
–100
mAdc
C
MARKING DIAGRAM
Symbol
Max
Unit
3
Total Device Dissipation FR–5 Board,
P
D
(Note 1.) T = 25°C
225
1.8
mW
mW/°C
A
Derate above 25°C
xx
Thermal Resistance,
Junction to Ambient
R
R
556
°C/W
qJA
2
1
xx= Device Marking
(See Table Below)
Total Device Dissipation Alumina
Substrate, (Note 2.) T = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
A
Thermal Resistance,
Junction to Ambient
417
°C/W
qJA
Junction and Storage Temperature
T , T
J stg
–55 to
+150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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LBC857CLT1G
Series
S-LBC857CLT1G
Series
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
3A
Package
SOT-23
Shipping
LBC856ALT1G,S-LBC856ALT1G
3000/Tape&Reel
LBC856ALT3G,S-LBC856ALT3G
LBC856BLT1G,S-LBC856BLT1G
LBC856BLT3G,S-LBC856BLT3G
LBC857ALT1G,S-LBC857ALT1G
LBC857ALT1G,S-LBC857ALT1G
LBC857BLT1G,S-LBC857BLT1G
LBC857BLT3G,S-LBC857BLT3G
LBC857CLT1G,S-LBC857CLT1G
LBC857CLT1G,S-LBC857CLT1G
LBC858ALT1G,S-LBC858ALT1G
LBC858ALT1G,S-LBC858ALT1G
LBC858BLT1G,S-LBC858BLT1G
LBC858BLT3G,S-LBC858BLT3G
LBC858CLT1G,S-LBC858CLT1G
LBC858CLT3G,S-LBC858CLT3G
LBC859BLT1G,S-LBC859BLT1G
LBC859BLT1G,S-LBC859BLT1G
LBC859CLT1G,S-LBC859CLT1G
LBC859CLT3G,S-LBC859CLT3G
SOT-23
SOT-23
10000/Tape&Reel
3000/Tape&Reel
3A
3B
3B
3E
SOT-23
SOT-23
10000/Tape&Reel
3000/Tape&Reel
3E
3F
SOT-23
SOT-23
10000/Tape&Reel
3000/Tape&Reel
SOT-23
SOT-23
10000/Tape&Reel
3000/Tape&Reel
3F
3G
3G
3J
SOT-23
SOT-23
10000/Tape&Reel
3000/Tape&Reel
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3J
3K
3K
3L
3L
4B
4B
4C
4C
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LBC857CLT1G
Series
S-LBC857CLT1G
Series
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –10 mA)
C
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V
–65
–45
–30
–
–
–
–
–
–
V
(BR)CEO
Collector–Emitter Breakdown Voltage
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V
–80
–50
–30
–
–
–
–
–
–
V
V
V
(BR)CES
(BR)CBO
(BR)EBO
(I = –10 µA, V
C EB
= 0)
Collector–Base Breakdown Voltage
(I = –10 mA)
C
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
V
V
–80
–50
–30
–
–
–
–
–
–
Emitter–Base Breakdown Voltage
(I = –1.0 mA)
E
LBC856 Series
LBC857 Series
LBC858, LBC859 Series
–5.0
–5.0
–5.0
–
–
–
–
–
–
Collector Cutoff Current (V
Collector Cutoff Current (V
= –30 V)
= –30 V, T = 150°C)
I
–
–
–
–
–15
–4.0
nA
µA
CB
CB
CBO
A
ON CHARACTERISTICS
DC Current Gain
h
FE
–
(I = –2.0 mA, V
C CE
= –5.0 V) LBC856A, LBC857A, LBC858A
LBC856B, LBC857B, LBC858B, LBC859B
LBC857C, LBC858C, LBC859C
125
220
420
180
290
520
250
475
800
Collector–Emitter Saturation Voltage
(I = –10 mA, I = –0.5 mA)
V
V
V
V
CE(sat)
–
–
–
–
–0.3
–0.65
C
B
(I = –100 mA, I = –5.0 mA)
C
B
Base–Emitter Saturation Voltage
(I = –10 mA, I = –0.5 mA)
V
BE(sat)
–
–
–0.7
–0.9
–
–
C
C
B
B
(I = –100 mA, I = –5.0 mA)
Base–Emitter On Voltage
V
BE(on)
(I = –2.0 mA, V
(I = –10 mA, V
C
= –5.0 V)
CE
= –5.0 V)
CE
–0.6
–
–
–
–0.75
–0.82
C
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
f
100
–
–
–
–
MHz
pF
T
(I = –10 mA, V
C CE
= –5.0 Vdc, f = 100 MHz)
Output Capacitance
(V = –10 V, f = 1.0 MHz)
C
4.5
ob
CB
Noise Figure
(I = –0.2 mA, V
NF
dB
= –5.0 Vdc, R = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
C
CE
S
LBC856, LBC857, LBC858 Series
LBC859 Series
–
–
–
–
10
4.0
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LBC857CLT1G
Series
S-LBC857CLT1G
Series
LBC857/ LBC858
–1.0
–0.9
–0.8
–0.7
–0.6
–0.5
–0.4
–0.3
–0.2
–0.1
0
2.0
1.5
TA = 25°C
VCE= –10 V
A = 25°C
V BE(sat) @ I C /I B=10
T
1.0
0.7
V
BE(on) @ V CE = –10 V
0.5
0.3
0.2
VCE(sat) @ IC /IB = 10
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
–0.1
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50 –100
IC , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
IC , COLLECTOR CURRENT (mAdc)
Figure 2. “Saturation” and “On” Voltages
–2.0
–1.6
–1.2
–0.8
–0.4
0
1.0
T
A = 25°C
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
I C
=
IC= –200 mA
IC= –100 mA
I C= –50 mA
–10 mA
IC= –20 mA
–0.02
–0.1
–1.0
–10
–20
–0.2
–1.0
–10
–100
IB , BASE CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
400
300
200
10.0
C ib
7.0
5.0
TA=25°C
100
80
V CE =–10V
T A = 25°C
C ob
3.0
2.0
60
40
30
20
1.0
–0.4
–0.6
–1.0
–2.0
–4.0 –6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0 –3.0
–5.0
–10
–20 –30
–50
I C , COLLECTOR CURRENT (mAdc)
V R , REVERSE VOLTAGE (VOLTS)
Figure 6. Current–Gain – Bandwidth Product
Figure 5. Capacitances
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LBC857CLT1G
Series
S-LBC857CLT1G
Series
LBC856
–1.0
–0.8
–0.6
–0.4
–0.2
0
TJ= 25°C
VBE(sat) @ IC/IB= 10
VCE = –5.0V
TA = 25°C
2.0
1.0
VBE @VCE= –5.0 V
0.5
0.2
VCE(sat) @ I C /IB= 10
–0.1–0.2
–1.0–2.0 –5.0–10–20 –50–100–200
–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200
IC , COLLECTOR CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
Figure 7. DC Current Gain
–2.0
–1.6
–1.2
–0.8
–0.4
0
–1.0
–1.4
–1.8
–2.2
–2.6
–3.0
–200mA
–100mA
I C
=
–20mA
–50mA
–10 mA
θ
VB for V BE
–55°C to 125°C
TJ= 25°C
–0.02
–0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
IB , BASE CURRENT (mA)
IC , COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
40
20
VCE= –5.0 V
500
TJ= 25°C
C ib
200
10
100
50
8.0
6.0
4.0
C ob
20
2.0
–0.1–0.2 –0.5 –1.0 –2.0 –5.0 –10 –20
–50 –100
–1.0
–10
–100
VR , REVERSE VOLTAGE (VOLTS)
IC , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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LBC857CLT1G
Series
S-LBC857CLT1G
Series
1.0
0.7
0.5
D=0.5
0.2
0.3
0.2
SINGLE PULSE
0.05
Z θJC (t) = r(t) R θJC
0.1
0.1
R θJC = 83.3°C/W MAX
P(pk)
Z
θJA (t) = r(t) R θJA
SINGLE PULSE
0.07
0.05
R θJA = 200°C/W MAX
t1
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
t 2
DUTY CYCLE, D = t1 /t 2
0.03
0.02
T J(pk) – T C = P (pk) RθJC (t)
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k
10k
t, TIME (ms)
Figure 13. Thermal Response
–200
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
1s
3 ms
–100
–50
TJ= 25°C
TA= 25°C
The data of Figure 14 is based upon TJ(pk) = 150°C; T C or TA
is variable depending upon conditions. Pulse curves are valid for
BC558
BC557
BC556
duty cycles to 10% provided TJ(pk) < 150°C. TJ(pk) may be calcu-
lated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
ondary breakdown.
–10
–5.0
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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LBC857CLT1G
Series
S-LBC857CLT1G
Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
L
2. CONTROLLING DIMENSION: INCH.
3
S
B
1
2
INCHES
MAX
MILLIMETERS
DIM
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
V
G
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
C
H
J
D
K
L
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
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