S-L2SC2412KRLT3G [LEIDITECH]
general purpose transistors NPN Silicon;
| 型号： | S-L2SC2412KRLT3G |
| 厂家： | 
Leiditech |
| 描述： | general purpose transistors NPN Silicon |
| 文件： | 总4页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Series
L2SC2412KQLT1G
general purpose transistors NPN Silicon
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
•
•
ORDERING INFORMATION
Device
Marking
BQ
Shipping
L2SC2412KQLT1G
S-L2SC2412KQLT1G
3000 Tape & Reel
10000 Tape & Reel
3000 Tape & Reel
3
L2SC2412KQLT3G
BQ
S-L2SC2412KQLT3G
L2SC2412KRLT1G
BR
S-L2SC2412KRLT1G
1
L2SC2412KRLT3G
10000 Tape & Reel
3000 Tape & Reel
10000 Tape & Reel
BR
S-L2SC2412KRLT3G
2
L2SC2412KSLT1G
G1F
G1F
S-L2SC2412KSLT1G
SOT– 23
L2SC2412KSLT3G
S-L2SC2412KSLT3G
MAXIMUM RATINGS
Rating
Symbol
V CEO
Value
Unit
V
3
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
50
60
COLLECTOR
V CBO
V
1
V EBO
7.0
150
0.2
150
V
BASE
Collector Current — Continuous
Collector power dissipation
Junction temperature
I C
P C
T j
mAdc
W
2
EMITTER
°C
Storage temperature
T stg
-55
~+150
°C
DEVICE MARKING
L2SC2412KQLT1G =BQ L2SC2412KRLT1G =BR L2SC2412KSLT1G =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
V (BR)CEO
50
—
—
V
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
V (BR)EBO
V (BR)CBO
I CBO
7
—
—
—
—
—
V
V
60
—
—
—
0.1
0.1
µA
µA
Emitter cutoff current
I EBO
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
V CE(sat)
h FE
—
—
0.4
V
120
––
560
––
f T
—
—
180
2.0
––
MHz
pF
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
C ob
3.5
(V CB = 12 V, I E= 0A, f =1MHz )
h FE values are classified as follows:
Q
R
S
*
hFE
120~270
180~390
270~560
1/4
Rev :01.06.2017
www.leiditech.com
Series
L2SC2412KQLT1G
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
0.50mA
50
100
VCE= 6 V
T A = 25°C
20
10
50
80
60
40
20
0
2
1
0.5
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1.6
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
Fig.4 DC current gain vs. collector current ( )
10
500
8
6
4
2
0
200
100
50
20
10
0
4
8
12
16
20
0.2
0.5
1
2
5
10
20
50
100
200
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
I C, COLLECTOR CURRENT (mA)
Fig.6 Collector-emitter saturation voltage vs.
collector current
Fig.5 DC current gain vs. collector current ( )
0.5
500
0.2
200
100
50
0.1
0.05
0.02
0.01
20
10
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
2/4
Rev :01.06.2017
www.leiditech.com
Series
L2SC2412KQLT1G
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.5
0.2
0.2
0.1
0.1
0.05
0.05
0.02
0.01
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.2
0.5
1
2
5
10
20
50
100
I C, COLLECTOR CURRENT (mA)
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
20
500
10
5
200
100
50
2
1
–0.5
–1
–2
–5
–10
–20
–50
–100
0.2
0.5
1
2
5
10
20
50
I E, EMITTER CURRENT (mA)
V CB, COLLECTOR TO BASE VOLTAGE (V)
EB, EMITTER TO BASE VOLTAGE (V)
V
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
3/4
Rev :01.06.2017
www.leiditech.com
Series
L2SC2412KQLT1G
SOT-
23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
A
L
2. CONTROLLING DIMENSION: INCH.
3
INCHES
MAX
MILLIMETERS
DIM
S
B
MIN
MIN
2.80
1.20
0.89
0.37
1.78
0.013
0.085
0.35
0.89
2.10
0.45
MAX
3.04
1.40
1.11
0.50
2.04
0.100
0.177
0.69
1.02
2.64
0.60
1
2
A
B
C
D
G
H
J
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
0.0034
0.0140
0.0350
0.0830
0.0177
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0070
0.0285
0.0401
0.1039
0.0236
V
G
C
K
L
H
J
D
K
S
V
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
4/4
Rev :01.06.2017
www.leiditech.com
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