MD50S12P2 [LEIDITECH]

Glass Passivated Three Phase Rectifier Bridge;
MD50S12P2
型号: MD50S12P2
厂家: Leiditech    Leiditech
描述:

Glass Passivated Three Phase Rectifier Bridge

文件: 总3页 (文件大小:333K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
上海雷卯电子科技有限公司  
SHANGHAI LEIDITECH ELECTRONICS CO.,LTD  
MD50S18P2  
Glass Passivated Three  
Phase Rectifier Bridge  
VRRM 800 to 1800V  
ID  
50 Amp  
Applications  
Three phase rectifiers for power supplies  
Rectifiers for DC motor field supplies  
Battery charger rectifiers  
Input rectifiers for variable frequency drives  
Circuit  
+
Features  
~
~
~
Three phase bridge rectifier  
Blocking voltage:800 to 1800V  
Heat transfer through aluminum oxide DBC  
ceramic isolated metal baseplate  
Glass passivated chip  
-
Module Type  
TYPE  
VRRM  
VRSM  
MD50S08P2  
MD50S12P2  
MD50S16P2  
MD50S18P2  
800V  
1200V  
1600V  
1800V  
900V  
1300V  
1700V  
1900V  
Maximum Ratings  
Symbol  
ID  
Item  
Output current (D.C)  
Conditions  
Tc=110  
Values  
50  
Units  
A
Forward surge current, max.  
Value for fusing  
t=10mS Tvj =45℃  
460  
A
IFSM  
i2t  
A2s  
V
1050  
Visol  
Tvj  
Isolation Breakdown Voltage(R.M.S)  
Operating Junction Temperature  
Storage Temperature  
To terminals(M5)  
a.c.50HZ;r.m.s.;1min  
3000  
-40 to +150  
-40 to +150  
3±15%  
5±15%  
145  
Tstg  
Nm  
Nm  
g
Mounting  
Torque  
To heatsink(M5)  
Weight  
Approximate Weight  
Module  
Thermal Characteristics  
Symbol  
Item  
Conditions  
Values  
Units  
Thermal Impedance, max.  
Per Module  
0.28  
/W  
Rth(j-c)  
Electrical Characteristics  
Values  
Min. Typ. Max.  
1.45 1.80  
Symbol  
VFM  
Item  
Conditions  
Units  
Forward Voltage Drop, max.  
T=25IF =150A  
V
Tvj =25VRD=VRRM  
Tvj =150VRD=VRRM  
Repetitive Peak Reverse Current,  
max.  
0.3  
5
mA  
mA  
IRRM  
Document Number: MD50S18P2  
www.leiditech.com  
1
2012  
上海雷卯电子科技有限公司  
SHANGHAI LEIDITECH ELECTRONICS CO.,LTD  
MD50S18P2  
Performance Curves  
120  
W
200  
A
150  
100  
60  
typ.  
50  
max.  
25  
Pvtot  
IF  
0
- - -125℃  
0
0
ID  
25  
A 50  
0
VF  
0.5  
1.0  
1.5  
V 2.0  
Fig2. Power dissipation  
Fig1. Forward Characteristics  
600  
A
0.28  
50HZ  
Zth(j-C  
/ W  
400  
200  
0
0.14  
0
0.001 0.01  
0.1  
1.0  
10  
S 100  
1
10  
cycles 100  
Fig4. Max Non-Repetitive Forward Surge  
Current  
Fig3. Transient thermal impedance  
100  
A
80  
60  
40  
20  
ID  
0
0
Tc  
50  
100  
150  
Fig5.Forward Current Derating Curve  
Document Number: MD50S18P2  
www.leiditech.com  
2
2012  
上海雷卯电子科技有限公司  
SHANGHAI LEIDITECH ELECTRONICS CO.,LTD  
MD50S18P2  
Package Outline Information  
CASEP2  
Dimensions in mm  
SHANGHAI LEIDITECH ELECTRONICS CO.,LTD  
Tel: +86- 021 50828806  
Fax: +86- 021 50477059-8008  
Email: sale1@leiditech.com  
Website: http://www.leiditech.com  
Document Number: MD50S18P2  
www.leiditech.com  
3
2012  

相关型号:

MD50S16M4

Glass Passivated Three Phase Rectifier Bridge
APTSEMI

MD50S16P2

Glass Passivated Three Phase Rectifier Bridge
LEIDITECH

MD50S18M4

Glass Passivated Three Phase Rectifier Bridge
APTSEMI

MD50S18P2

Glass Passivated Three Phase Rectifier Bridge
LEIDITECH

MD5100

Zener Diode, 160V V(Z), 5%, 3W, Silicon, Unidirectional
MICROSEMI

MD5100E3

Zener Diode, 160V V(Z), 5%, 3W, Silicon, Unidirectional,
MICROSEMI

MD5101

Zener Diode, 170V V(Z), 5%, 3W, Silicon, Unidirectional
MICROSEMI

MD5102

Zener Diode, 180V V(Z), 5%, 3W, Silicon, Unidirectional
MICROSEMI

MD5102E3

Zener Diode, 180V V(Z), 5%, 3W, Silicon, Unidirectional,
MICROSEMI

MD5103

Zener Diode, 190V V(Z), 5%, 3W, Silicon, Unidirectional
MICROSEMI

MD5103E3

Zener Diode, 190V V(Z), 5%, 3W, Silicon, Unidirectional,
MICROSEMI

MD5104

Zener Diode, 200V V(Z), 5%, 3W, Silicon, Unidirectional
MICROSEMI