LCE65T1K2D [LEIDITECH]
LCE N-Channel Super Junction Power MOSFET;
| 型号： | LCE65T1K2D |
| 厂家： | 
Leiditech |
| 描述： | LCE N-Channel Super Junction Power MOSFET |
| 文件： | 总9页 (文件大小：1968K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LCE65T1K2,LCE65T1K2D,LCE65T1K2F
LCE N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced trench gate super
junction technology and design to provide excellent RDS(ON)
with low gate charge. This super junction MOSFET fits the
industry’s AC-DC SMPS requirements for PFC, AC/DC
power conversion, and industrial power applications.
VDS
650
950
4
V
mΩ
A
RDS(ON)TYP.
ID
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
TO-220
Marking
LCE65 T1K2
LCE65 T1K2D
LCE65 T1K2F
NCE65T1K2
NCE65T1K2D
NCE65T1K2F
TO-263
TO-220F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25℃)
LCE65T1K2
LCE65T1K2D
Parameter
Symbol
LCE65T1K2F Unit
650
V
V
Drain-Source Voltage (VGS=0V）
VDS
VGS
±30
Gate-Source Voltage (VDS=0V) ,AC (f>1 Hz)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
4
4*
2.5*
16*
A
ID (DC)
ID (DC)
IDM (pluse)
PD
2.5
16
41
A
(Note 1)
A
Pulsed drain current
Maximum Power Dissipation(Tc=25℃)
28.4
0.227
W
Derate above 25°C
0.328
W/°C
mJ
A
(Note2)
27
EAS
IAR
Single pulse avalanche energy
(Note 1)
0.7
Avalanche current
Repetitive Avalanche energy ，tAR limited by Tjmax
(Note 1)
0.1
EAR
mJ
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
LCE65T1K2
Parameter
Symbol
LCE65T1K2F
Unit
LCE65T1K2D
Drain Source voltage slope, VDS ≤480 V,
Reverse diode dv/dt，VDS ≤480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
50
15
dv/dt
dv/dt
V/ns
V/ns
°C
-55...+150
TJ,TSTG
Table 2. Thermal Characteristic
Parameter
LCE65T1K2
Symbol
LCE65T1K2F
Unit
LCE65T1K2D
Thermal Resistance，Junction-to-Case（Maximum）
Thermal Resistance，Junction-to-Ambient （Maximum）
RthJC
RthJA
3.0
62
4.4
80
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max
Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
BVDSS
IDSS
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=2A
650
V
μA
μA
nA
V
1
IDSS
50
IGSS
±100
VGS(th)
RDS(ON)
3
4
Drain-Source On-State Resistance
Dynamic Characteristics
Input Capacitance
950
1100
mΩ
Clss
Coss
Crss
Qg
304
18
pF
pF
pF
nC
nC
nC
V
DS=50V,VGS=0V,
F=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
0.6
8.8
2.3
4
12
VDS=480V,ID=4A,
GS=10V
Gate-Source Charge
Qgs
Qgd
V
Gate-Drain Charge
Switching times
Turn-on Delay Time
td(on)
tr
td(off)
tf
8
4
nS
nS
nS
nS
Turn-on Rise Time
VDD=380V,ID=2.5A,
RG=5Ω,VGS=10V
Turn-Off Delay Time
52
9
70
18
Turn-Off Fall Time
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
ISD
ISDM
VSD
trr
4
A
A
TC=25°C
16
1.2
Tj=25°C,ISD=4A,VGS=0V
0.9
200
0.6
6
V
Reverse Recovery Time
nS
uC
A
Reverse Recovery Charge
Peak reverse recovery current
Qrr
Tj=25°C,IF=2A,di/dt=100A/μs
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
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Rev :01.06.2018
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
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Rev :01.06.2018
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
Figure7. BVDSS vs Junction Temperature
Figure8. Maximum ID vs Junction Temperature
Figure9. Gate charge waveforms
Figure10. Capacitance
Figure11. Transient Thermal Impedance for TO-220,TO-263
Figure12. Safe operating area for TO-220F
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
Figure13. Transient Thermal Impedance for TO-220F
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Rev :01.06.2018
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
Test circuit
1）Gate charge test circuit & Waveform
2）Switch Time Test Circuit：
3）Unclamped Inductive Switching Test Circuit & Waveforms
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
TO-263-3L Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.57
0.25
0.94
1.40
0.61
1.40
9.40
8.23
10.28
8.08
Max.
0.180
0.010
0.037
0.055
0.024
0.055
0.370
0.324
0.405
0.318
A
A1
b
4.32
-
0.170
0.71
1.15
0.46
1.22
8.89
8.01
10.04
7.88
0.028
0.045
0.018
0.048
0.350
0.315
0.395
0.310
b2
c
c2
D
D1
E
E1
e
2.54 BSC
0.100 BSC
L
14.73
2.29
1.15
1.27
15.75
2.79
1.39
1.77
0.580
0.090
0.045
0.050
0.620
0.110
0.055
0.070
L1
L2
L3
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
TO-220-3L-C Package Information
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Symbol
Max.
4.600
2.550
0.910
1.370
0.650
1.400
10.250
9.750
12.950
Max.
0.181
0.100
0.036
0.054
0.026
0.055
0.404
0.384
0.510
A
A1
b
4.400
2.250
0.710
1.170
0.330
1.200
9.910
8.9500
12.650
0.173
0.089
0.028
0.046
0.013
0.047
0.390
0.352
0.498
b1
c
c1
D
E
E1
e
2.540 TYP.
0.100 TYP.
e1
F
4.980
2.650
7.900
0.000
12.900
2.850
5.180
2.950
8.100
0.300
13.400
3.250
0.196
0.104
0.311
0.000
0.508
0.112
0.204
0.116
0.319
0.012
0.528
0.128
H
h
L
L1
V
7.500 REF.
0.295 REF.
Φ
3.400
3.800
0.134
0.150
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Rev :01.06.2018
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LCE65T1K2,LCE65T1K2D,LCE65T1K2F
TO-220F Package Information
Symbol
Dimensions In Millimeters
Min.
Dimensions In Inches
Min.
Max.
4.900
2.740
2.960
0.900
1.580
0.600
10.360
15.970
6.900
16.100
Max.
0.193
0.108
0.117
0.035
0.062
0.024
0.408
0.629
0.272
0.634
A
A1
A2
b1
b2
c
4.500
2.340
2.560
0.700
1.180
0.400
9.960
15.670
6.500
15.500
0.177
0.092
0.101
0.028
0.046
0.016
0.392
0.617
0.256
0.610
D
E
E1
E2
e
2.540 TYP
0.100 TYP
Φ
3.080
12.640
3.030
3.280
13.240
3.430
0.121
0.498
0.119
0.129
0.521
0.135
L
L1
Shanghai Leiditech Electronic Co.,Ltd
Email: sale1@leiditech.com
Tel : +86- 021 50828806
Fax : +86- 021 50477059
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