BY25Q128ASWIG [LEIDITECH]
128M BIT SPI NOR FLASH;
| 型号： | BY25Q128ASWIG |
| 厂家： | 
Leiditech |
| 描述： | 128M BIT SPI NOR FLASH |
| 文件： | 总73页 (文件大小：2753K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Boya Microelectronics
Memory Series
BY25Q128AS
128M BIT SPI NOR FLASH
Features
● Serial Peripheral Interface (SPI)
- Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD
- Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD
- Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3
● Read
- Normal Read (Serial): 55MHz clock rate
- Fast Read (Serial): 108MHz clock rate with 30PF load
- Dual I/O data transfer up to 216Mbits/S
- Quad I/O data transfer up to 432Mbits/S
-Continuous Read with 8/16/32/64-byte Wrap
● Program
- Serial-input Page Program up to 256bytes
- Program Suspend and Resume
● Erase
- Block erase (64/32 KB)
- Sector erase (4 KB)
- Chip erase
- Erase Suspend and Resume
● Program/Erase Speed
- Page Program time: 0.6ms typical
- Sector Erase time: 50ms typical
- Block Erase time: 0.15/0.25s typical
- Chip Erase time: 60s typical
● Flexible Architecture
- Sector of 4K-byte
- Block of 32/64K-byte
● Low Power Consumption
- 25mA maximum active current
- 5uA maximum power down current
● Software/Hardware Write Protection
- 3x256-Byte Security Registers with OTP Locks
- Discoverable Parameters (SFDP) register
- Enable/Disable protection with WP Pin
- Write protect all/portion of memory via software
- Top or Bottom, Sector or Block selection
● Single Supply Voltage
- Full voltage range: 2.7~3.6V
● Temperature Range
- Commercial (0℃ to +70℃)
- Industrial (-40℃ to +85℃)
- Industrial (-40℃ to +105℃)
● Cycling Endurance/Data Retention
- Typical 100k Program-Erase cycles on any sector
- Typical 20-year data retention
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Contents
BY25Q128AS
Contents
1. Description................................................................................. 4
2. Signal Description ...................................................................... 6
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
Input/Output Summary ................................................................................. 6
Chip Select (/CS) .......................................................................................... 6
Serial Clock (SCLK)..................................................................................... 6
Serial Input (SI)/IO0 ..................................................................................... 6
Serial Data Output (SO)/IO1......................................................................... 7
Write Protect (/WP)/IO2 ............................................................................... 7
HOLD (/HOLD)/IO3 .................................................................................... 7
VCC Power Supply....................................................................................... 8
VSS Ground.................................................................................................. 8
3. Block/Sector Addresses ............................................................. 9
4. SPI Operation .......................................................................... 10
4.1
4.2
4.3
Standard SPI Instructions............................................................................ 10
Dual SPI Instructions .................................................................................. 10
Quad SPI Instructions ................................................................................. 10
5. Operation Features ...................................................................11
5.1
Supply Voltage .............................................................................................11
5.1.1 Operating Supply Voltage.........................................................11
5.1.2 Power-up Conditions................................................................11
5.1.3 Device Reset............................................................................11
5.1.4 Power-down .............................................................................11
Active Power and Standby Power Modes....................................................11
Hold Condition.............................................................................................11
Status Register............................................................................................. 13
5.4.1 Status Register Table .............................................................. 13
5.4.2 The Status and Control Bits..................................................... 13
5.4.3 Status Register Protect Table.................................................. 15
5.4.4 Write Protect Features............................................................. 15
5.4.5 Status Register Memory Protection......................................... 16
5.2
5.3
5.4
6. Device Identification................................................................. 18
7. Instructions Description............................................................ 19
7.1
Configuration and Status Instructions......................................................... 23
7.1.1 Write Enable (06H).................................................................. 23
7.1.2 Write Disable (04H)................................................................. 23
7.1.3 Read Status Register (05H or 35H or 15H)............................. 24
7.1.4 Write Status Register (01H or 31H or 11H) ............................. 24
7.1.5 Write Enable for Volatile Status Register (50H)....................... 25
Read Instructions......................................................................................... 26
7.2.1 Read Data (03H) ..................................................................... 26
7.2.2 Fast Read (0BH) ..................................................................... 27
7.2.3 Dual Output Fast Read (3BH) ................................................. 28
7.2.4 Quad Output Fast Read (6BH)................................................ 29
7.2.5 Dual I/O Fast Read (BBH)....................................................... 30
7.2.6 Quad I/O Fast Read (EBH)...................................................... 32
7.2.7 Quad I/O Word Fast Read (E7H) ............................................ 34
7.2.8 Set Burst with Wrap (77H)....................................................... 36
ID and Security Instructions ....................................................................... 37
7.3.1 Read Manufacture ID/ Device ID (90H)................................... 37
7.3.2 Dual I/O Read Manufacture ID/ Device ID (92H)..................... 38
7.2
7.3
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Contents
BY25Q128AS
7.3.3 Quad I/O Read Manufacture ID/ Device ID (94H) ................... 39
7.3.4 Read JEDEC ID (9FH) ............................................................ 40
7.3.5 Read Unique ID Number (4Bh) ............................................... 41
7.3.6 Deep Power-Down (B9H)........................................................ 42
7.3.7 Release from Deep Power-Down/Read Device ID (ABH) ....... 43
7.3.8 Read Security Registers (48H)................................................ 44
7.3.9 Erase Security Registers (44H)............................................... 45
7.3.10 Program Security Registers (42H)........................................... 46
7.3.11 Enable Reset (66H) and Reset Device (99H).......................... 47
7.3.12 Read Serial Flash Discoverable Parameter (5AH) .................. 48
Program and Erase Instructions .................................................................. 49
7.4.1 Page Program (02H) ............................................................... 49
7.4.2 Quad Page Program (32H)...................................................... 50
7.4.3 Fast Page Program (F2H) ....................................................... 51
7.4.4 Sector Erase (20H).................................................................. 52
7.4.5 32KB Block Erase (52H) ......................................................... 53
7.4.6 64KB Block Erase (D8H)......................................................... 54
7.4.7 Chip Erase (60/C7H)............................................................... 55
7.4.8 Erase / Program Suspend (75H) ............................................. 56
7.4.9 Erase / Program Resume (7AH).............................................. 57
7.4
8. Electrical Characteristics.......................................................... 58
8.1
8.2
8.3
8.4
8.5
8.6
8.7
Absolute Maximum Ratings ....................................................................... 58
Operating Ranges........................................................................................ 58
Latch Up Characteristics............................................................................. 59
Power-up Timing......................................................................................... 59
DC Electrical Characteristics...................................................................... 60
AC Measurement Conditions...................................................................... 62
AC Electrical Characteristics...................................................................... 62
9. Package Information ................................................................ 67
9.1
9.2
9.3
Package 8-Pin SOP 208-mil........................................................................ 67
Package 8-Pad WSON (6x5mm) ................................................................ 68
Package SOP16-300mil .............................................................................. 69
10.Order Information..................................................................... 70
10.1 Valid part Numbers and Top Side Marking................................................. 71
10.2 Minimum Packing Quantity (MPQ) ........................................................... 72
11. Document Change History ....................................................... 73
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Description
BY25Q128AS
1. Description
The BY25Q128AS is 128M-bit Serial Peripheral Interface (SPI) Flash memory, and supports the
Dual/Quad SPI: Serial Clock, Chip Select, Serial Data I/O0 (SI), I/O1 (SO), I/O2 (/WP), and I/O3
(/HOLD). The Dual I/O data is transferred with speed of 216Mbits/s and the Quad I/O & Quad output
data is transferred with speed of 432Mbits/s. The device uses a single low voltage power supply,
ranging from 2.7 Volt to 3.6 Volt.
Additionally, the device supports JEDEC standard manufacturer and device ID and three 256-bytes
Security Registers.
In order to meet environmental requirements, Boya Microelectronics offers 8-pin SOP 208mil, 8-
pad WSON 6x5-mm, and other special order packages, please contacts Boya Microelectronics for
ordering information.
Figure 1. Logic diagram
VCC
SCLK
SI
SO
/CS
BY25QXX
/WP
/HOLD
VSS
Figure 2. Pin Configuration SOP 208 mil
Top View
/CS
1
VCC
8
SO
2
3
7
/HOLD
SCLK
SI
SOP8 208mil
/WP
VSS
6
5
4
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Description
BY25Q128AS
Figure 3. Pin Configuration WSON 6x5-mm
1
8
7
/CS
VCC
2
/HOLD
SO
Top View
3
SCLK
SI
/WP
6
5
4
VSS
Figure 4. Pin Configuration SOP16 300 mil
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BY25Q128AS
Signal Description
2. Signal Description
During all operations, VCC must be held stable and within the specified valid range: VCC (min) to
VCC (max).
All of the input and output signals must be held High or Low (according to voltages of VIH, VOH,
VIL or VOL, see Section 8.6, DC Electrical Characteristics on page 60). These signals are
described next.
2.1 Input/Output Summary
Table 1. Signal Names
Pin Name
/CS
I/O
I
Description
Chip Select
Serial Output for single bit data Instructions. IO1 for Dual or Quad
Instructions.
Write Protect in single bit or Dual data Instructions. IO2 in Quad mode.
The signal has an internal pull-up resistor and may be left unconnected
in the host system if not used for Quad Instructions.
SO (IO1)
/WP (IO2)
VSS
I/O
I/O
Ground
Serial Input for single bit data Instructions. IO0 for Dual or Quad
Instructions.
SI (IO0)
SCLK
I/O
I
Serial Clock
Hold (pause) serial transfer in single bit or Dual data Instructions. IO3 in
Quad-I/O mode. The signal has an internal pull-up resistor and may be
left unconnected in the host system if not used for Quad Instructions.
/HOLD (IO3)
VCC
I/O
Core and I/O Power Supply
2.2 Chip Select (/CS)
The chip select signal indicates when an instruction for the device is in process and the other
signals are relevant for the memory device. When the /CS signal is at the logic high state, the
device is not selected, and all input signals are ignored and all output signals are high impedance.
Unless an internal Program, Erase or Write Status Registers embedded operation is in progress,
the device will be in the Standby Power mode. Driving the /CS input to logic low state enables the
device, placing it in the Active Power mode. After Power Up, a falling edge on /CS is required prior
to the start of any instruction.
2.3 Serial Clock (SCLK)
This input signal provides the synchronization reference for the SPI interface. Instructions,
addresses, or data input are latched on the rising edge of the SCLK signal. Data output changes
after the falling edge of SCLK.
2.4 Serial Input (SI)/IO0
This input signal is used to transfer data serially into the device. It receives instructions, addresses,
and data to be programmed. Values are latched on the rising edge of serial SCK clock signal.
SI becomes IO0 an input and output during Dual and Quad Instructions for receiving instructions,
addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal)
as well as shifting out data (on the falling edge of SCK).
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BY25Q128AS
Signal Description
2.5 Serial Data Output (SO)/IO1
This output signal is used to transfer data serially out of the device. Data is shifted out on the falling
edge of the serial SCK clock signal.
SO becomes IO1 an input and output during Dual and Quad Instructions for receiving instructions,
addresses, and data to be programmed (values latched on rising edge of serial SCK clock signal)
as well as shifting out data (on the falling edge of SCK).
2.6 Write Protect (/WP)/IO2
When /WP is driven Low (VIL), while the Status Register Protect bits (SRP1 and SRP0) of the
Status Registers (SR2[0] and SR1[7]) are set to 0 and 1 respectively, it is not possible to write to
the Status Registers. This prevents any alteration of the Status Registers. As a consequence, all
the data bytes in the memory area that are protected by the Block Protect, TB, SEC, and CMP bits
in the status registers, are also hardware protected against data modification while /WP remains
Low. The /WP function is not available when the Quad mode is enabled (QE) in Status Register 2
(SR2[1]=1).
The /WP function is replaced by IO2 for input and output during Quad mode for receiving addresses,
and data to be programmed (values are latched on rising edge of the SCK signal) as well as shifting
out data (on the falling edge of SCK). /WP has an internal pull-up resistance; when unconnected;
/WP is at VIH and may be left unconnected in the host system if not used for Quad mode.
2.7 HOLD (/HOLD)/IO3
The /HOLD function is only available when QE=0, If QE=1, The /HOLD function is disabled, the pin
acts as dedicated data I/O pin
The /HOLD signal goes low to stop any serial communications with the device, but doesn’t stop the
operation of write status register, programming, or erasing in progress.
The operation of HOLD, need /CS keep low, and starts on falling edge of the /HOLD signal, with
SCLK signal being low (if SCLK is not being low, HOLD operation will not start until SCLK being
low). The HOLD condition ends on rising edge of /HOLD signal with SCLK being low (If SCLK is
not being low, HOLD operation will not end until SCLK being low).
The Hold condition starts on the falling edge of the Hold (/HOLD) signal, provided that this coincides
with SCK being at the logic low state. If the falling edge does not coincide with the SCK signal being
at the logic low state, the Hold condition starts whenever the SCK signal reaches the logic low state.
Taking the /HOLD signal to the logic low state does not terminate any Write, Program or Erase
operation that is currently in progress.
/CS
SCLK
/HOLD
HOLD
HOLD
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BY25Q128AS
Signal Description
2.8 VCC Power Supply
VCC is the supply voltage. It is the single voltage used for all device functions including read,
program, and erase.
2.9 VSS Ground
VSS is the reference for the VCC supply voltage.
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Block/Sector Addresses
BY25Q128AS
3. Block/Sector Addresses
Table 2. Block/Sector Addresses of BY25Q128AS
Memory
Density
Block(64k Block(32k
Sector
Size(KB)
Sector No.
Address range
byte)
byte)
Sector
：
0
4
000000h-000FFFh
：
Half block
0
：
4
Sector
Sector
：
7
8
007000h-007FFFh
008000h-008FFFh
：
Block 0
4
Half block
1
4
Sector 15
Sector 16
：
4
00F000h-00FFFFh
010000h-010FFFh
：
4
Half block
2
：
4
Sector 23
Sector 24
：
017000h-017FFFh
018000h-018FFFh
：
Block 1
4
Half block
3
：
4
Sector 31
：
01F000h-01FFFFh
：
：
：
128Mbit
：
4
Sector 4064
：
FE0000h-FE0FFFh
：
Half block
508
：
4
Sector 4071
Sector 4072
：
FE7000h-FE7FFFh
FE8000h-FE8FFFh
：
Block 254
4
Half block
509
：
4
Sector 4079
Sector 4080
：
FEF000h-FEFFFFh
FF0000h-FF0FFFh
：
4
Half block
510
：
4
Sector 4087
Sector 4088
：
FF7000h-FF7FFFh
FF8000h-FF8FFFh
：
Block 255
4
Half block
511
：
4
Sector 4095
FFF000h-FFFFFFh
Notes:
1. Block = Uniform Block, and the size is 64K bytes.
2. Half block = Half Uniform Block, and the size is 32k bytes.
3. Sector = Uniform Sector, and the size is 4K bytes.
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SPI Operation
BY25Q128AS
4. SPI Operation
4.1 Standard SPI Instructions
The BY25Q128AS features a serial peripheral interface on 4 signals bus: Serial Clock (SCLK),
Chip Select (/CS), Serial Data Input (SI) and Serial Data Output (SO). Both SPI bus mode 0 and 3
are supported. Input data is latched on the rising edge of SCLK and data shifts out on the falling
edge of SCLK.
4.2 Dual SPI Instructions
The BY25Q128AS supports Dual SPI operation when using the “Dual Output Fast Read” (3BH),
“Dual I/O Fast Read” (BBH) and “Read Manufacture ID/Device ID Dual I/O” (92H) instructions.
These instructions allow data to be transferred to or from the device at two times the rate of the
standard SPI. When using the Dual SPI instruction the SI and SO pins become bidirectional I/O
pins: IO0 and IO1.
4.3 Quad SPI Instructions
The BY25Q128AS supports Quad SPI operation when using the “Quad Output Fast Read”(6BH),
“Quad I/O Fast Read” (EBH) ,”Quad I/O word Fast Read”(E7H),”Read Manufacture ID/Device ID
Quad I/O”(94H) and “Quad Page Program”(32H) instructions. These instructions allow data to be
transferred to or from the device at four times the rate of the standard SPI. When using the Quad
SPI instruction the SI and SO pins become bidirectional I/O pins: IO0 and IO1, and /WP and /HOLD
pins become IO2 and IO3. Quad SPI instructions require the non-volatile Quad Enable bit (QE) in
Status Register to be set.
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Operation Features
BY25Q128AS
5. Operation Features
5.1 Supply Voltage
5.1.1 Operating Supply Voltage
Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within
the specified [VCC(min), VCC(max)] range must be applied (see operating ranges of page 58). In
order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a
suitable capacitor (usually of the order of 10nF to 100nF) close to the VCC/VSS package pins. This
voltage must remain stable and valid until the end of the transmission of the instruction and, for a
Write instruction, until the completion of the internal write cycle (tW).
5.1.2 Power-up Conditions
When the power supply is turned on, VCC rises continuously from VSS to VCC. During this time,
the Chip Select (/CS) line is not allowed to float but should follow the VCC voltage, it is therefore
recommended to connect the /CS line to VCC via a suitable pull-up resistor.
In addition, the Chip Select (/CS) input offers a built-in safety feature, as the /CS input is edge
sensitive as well as level sensitive: after power-up, the device does not become selected until a
falling edge has first been detected on Chip Select (/CS). This ensures that Chip Select (/CS) must
have been High, prior to going Low to start the first operation.
5.1.3 Device Reset
In order to prevent inadvertent Write operations during power-up (continuous rise of VCC), a power
on reset (POR) circuit is included. At Power-up, the device does not respond to any instruction until
VCC has reached the power on reset threshold voltage (this threshold is lower than the minimum
VCC operating voltage defined in operating ranges of page 58).
When VCC has passed the POR threshold, the device is reset.
5.1.4 Power-down
At Power-down (continuous decrease in VCC), as soon as VCC drops from the normal operating
voltage to below the power on reset threshold voltage, the device stops responding to any
instruction sent to it. During Power-down, the device must be deselected (Chip Select (/CS) should
be allowed to follow the voltage applied on VCC) and in Standby Power mode (that is there should
be no internal Write cycle in progress).
5.2 Active Power and Standby Power Modes
When Chip Select (/CS) is Low, the device is selected, and in the Active Power mode. The device
consumes ICC.
When Chip Select (/CS) is High, the device is deselected. If a Write cycle is not currently in progress,
the device then goes in to the Standby Power mode, and the device consumption drops to ICC1.
5.3 Hold Condition
The Hold (/HOLD) signal is used to pause any serial communications with the device without
resetting the clocking sequence. During the Hold condition, the Serial Data Output (SO) is high
impedance, and Serial Data Input (SI) and Serial Clock (SCLK) are Don’t Care. To enter the Hold
condition, the device must be selected, with Chip Select (/CS) Low. Normally, the device is kept
selected, for the whole duration of the Hold condition. Deselecting the device while it is in the Hold
condition, has the effect of resetting the state of the device, and this mechanism can be used if it
is required to reset any processes that had been in progress.
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Operation Features
BY25Q128AS
The Hold condition starts when the Hold (/HOLD) signal is driven Low at the same time as Serial
Clock (SCLK) already being Low (as shown in Figure 4).The Hold condition ends when the Hold
(HOLD) signal is driven High at the same time as Serial Clock (C) already being Low. Figure 4 also
shows what happens if the rising and falling edges are not timed to coincide with Serial Clock
(SCLK) being Low.
Figure 4. Hold condition activation
/CS
SCLK
/HOLD
HOLD
HOLD
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Operation Features
BY25Q128AS
5.4 Status Register
5.4.1 Status Register Table
See Table 3 for detail description of the Status Register bits.
Table 3. Status Register
S23
S22
S21
S20
S19
S18
S17
S16
Reserved DRV1
DRV0 Reserved Reserved Reserved Reserved Reserved
S15
S14
S13
S12
S11
S10
S9
S8
SUS1
CMP
LB3
LB2
LB1
SUS2
QE
SRP1
S7
S6
S5
S4
S3
S2
S1
S0
SRP0
BP4
BP3
BP2
BP1
BP0
WEL
WIP
5.4.2 The Status and Control Bits
5.4.2.1 WIP bit
The Write in Progress (WIP) bit indicates whether the memory is busy in program/erase/write status
register progress. When WIP bit sets to 1, means the device is busy in program/erase/write status
register progress, when WIP bit sets 0, means the device is not in program/erase/write status
register progress.
5.4.2.2 WEL bit
The Write Enable Latch bit indicates the status of the internal Write Enable Latch. When set to 1
the internal Write Enable Latch is set, when set to 0 the internal Write Enable Latch is reset and no
Write Status Register, Program or Erase instruction is accepted.
5.4.2.3 BP4, BP3, BP2, BP1, BP0 bits
The Block Protect (BP4, BP3, BP2, BP1, BP0) bits are non-volatile. They define the size of the
area to be software protected against Program and Erase instructions. These bits are written with
the Write Status Register instruction. When the Block Protect (BP4, BP3, BP2, BP1, BP0) bits are
set to 1, the relevant memory area (as defined in Table 6 and Table 7).becomes protected against
Page Program, Sector Erase and Block Erase instructions. The Block Protect (BP4, BP3, BP2,
BP1, BP0) bits can be written provided that the Hardware Protected mode has not been set. The
Chip Erase(CE) instruction is executed, if the Block Protect(BP2,BP1,BP0)bits are 0 and CMP=0
or The Block Protect (BP2, BP1, BP0) bits are1 and CMP=1.
5.4.2.4 SRP1, SRP0 bits
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the status
register. The SRP bits control the method of write protection: software protection, hardware
protection, power supply lock-down or one time programmable protection.
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Operation Features
BY25Q128AS
5.4.2.5 QE bit
The Quad Enable (QE) bit is a non-volatile Read/Write bit in the Status Register that allows Quad
operation. When the QE bit is set to 0 (Default) the /WP pin and /HOLD pin are enable. When the
QE pin is set to 1, the Quad IO2 and IO3 pins are enabled. (The QE bit should never be set to 1
during standard SPI or Dual SPI operation if the /WP or /HOLD pins directly to the power supply or
ground).
5.4.2.6 LB3/LB2/LB1 bit
The LB bit is a non-volatile One Time Program (OTP) bit in Status Register (S13–S11) that provide
the write protect control and status to the Security Registers. The default state of LB is 0, the
security registers are unlocked. LB can be set to 1 individually using the Write Register instruction.
LB is One Time Programmable, once they are set to 1, the Security Registers will become read-
only permanently.
5.4.2.7 CMP bit
The CMP bit is a non-volatile Read/Write bit in the Status Register (S14). It is used in conjunction
the SEC-BP0 bits to provide more flexibility for the array protection. Please see the Status registers
Memory Protection table for details. The default setting is CMP=0.
5.4.2.8 SUS1/SUS2 bit
The SUS1 and SUS2 bits are read only bits in the status register2 (S15 and S10) that are set to 1
after executing an Erase/Program Suspend (75H) instruction (The Erase Suspend will set SUS1 to
1, and the Program Suspend will set the SUS2 to 1). The SUS1 and SUS2 bits are cleared to 0 by
Erase/Program Resume (7AH) instruction as well as a power-down, power-up cycle.
5.4.2.9 DRV1/DRV0
The DRV1&DRV0 bits are used to determine the output driver strength for the Read instruction.
DRV1,DRV0
Driver Strength
100%(default)
75%
00
01
10
50%
11
25%
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Operation Features
BY25Q128AS
5.4.3 Status Register Protect Table
The Status Register Protect (SRP1 and SRP0) bits are non-volatile Read/Write bits in the Status
Register. The SRP bits control the method of write protection: software protection, hardware
protection, power supply lock-down or one time programmable protection.
Table 4. Status Register protect table
SRP1 SRP0 /WP Status Register Description
Software
Protected
Hardware
Protected
The Status Register can be written to after a Write
Enable instruction, WEL=1.(Factory Default)
/WP=0, the Status Register locked and cannot be
written.
0
0
0
1
X
0
Hardware
Unprotected
/WP=1, the Status Register is unlocked and can be
written to after a Write Enable instruction, WEL=1.
0
1
1
1
Power Supply
Lock-Down(1)
One Time
Program(2)
Status Register is protected and cannot be written to
again until the next Power-Down, Power-Up cycle.
Status Register is permanently protected and cannot
be written to.
0
1
X
X
1
Notes:
1. When SRP1, SRP0= (1, 0), a Power-Down, Power-Up cycle will change SRP1, SRP0 to
(0, 0) state.
2. The One time Program feature is available upon special order. Please contact Boya
Microelectronics for details.
5.4.4 Write Protect Features
1. Software Protection: The Block Protect (BP4, BP3, BP2, BP1, BP0) bits define the section of
the memory array that can be read but not change.
2. Hardware Protection: /WP going low to protect the writable bits of Status Register.
3. Deep Power-Down: In Deep Power-Down Mode, all instructions are ignored except the
Release from deep Power-Down Mode instruction.
4. Write Enable: The Write Enable instruction is set the Write Enable Latch bit. The WEL bit will
return to reset by following situation:
-Power –up
-Write Disable
-Write Status Register
-Page Program
-Sector Erase/Block Erase/Chip Erase
-Software Reset
July 2020
Rev 1.5
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Operation Features
BY25Q128AS
5.4.5 Status Register Memory Protection
5.4.5.1 Protect Table
Table 5. BY25Q128AS Status Register Memory Protection (CMP=0)
Status Register Content
BP
4
Memory Content
Densi
BP3 BP2 BP1 BP0
Blocks
Addresses
Portion
NONE
ty
X
X
0
0
0
0
0
0
1
NONE
NONE
NONE
256K
B
0
0
252 to 255 FC0000H-FFFFFFH
Upper 1/64
512K
B
0
0
1
0
248 to 255
F80000H-FFFFFFH
Upper 1/32
0
0
0
0
0
0
0
0
0
1
1
1
1
0
0
1
1
0
1
0
240 to 255
224 to 255
192 to 255
128 to 255
F00000H-FFFFFFH
E00000H-FFFFFFH
C00000H-FFFFFFH
800000H-FFFFFFH
1MB
Upper 1/16
Upper 1/8
Upper 1/4
Upper 1/2
2MB
4MB
8MB
256K
B
512K
B
0
0
1
1
0
0
0
1
1
0
0 to 3
0 to 7
000000H-03FFFFH
000000H-07FFFFH
Lower 1/64
Lower 1/32
0
0
0
0
X
1
1
1
1
1
1
1
1
1
X
0
0
0
0
0
0
1
1
1
1
0
0
0
1
1
1
0
0
1
1
0
1
1
0
1
1
0
1
0
1
1
0
1
X
0
0 to 15
0 to 31
0 to 63
0 to 127
0 to 255
255
000000H-0FFFFFH
000000H-1FFFFFH
000000H-3FFFFFH
000000H-7FFFFFH
1MB
Lower 1/16
Lower 1/8
Lower 1/4
Lower 1/2
ALL
2MB
4MB
8MB
000000H-FFFFFFH 16MB
FFF000H-FFFFFFH
FFE000H-FFFFFFH
FFC000H-FFFFFFH 16KB
FF8000H-FFFFFFH 32KB
FF8000H-FFFFFFH 32KB
4KB
8KB
Top Block
Top Block
Top Block
Top Block
Top Block
255
255
255
255
Bottom
Block
Bottom
Block
Bottom
Block
Bottom
Block
1
1
1
1
1
1
1
1
1
1
0
0
0
1
1
0
1
1
0
1
1
0
1
X
0
0
0
0
0
0
000000H-000FFFH
000000H-001FFFH
000000H-003FFFH
000000H-007FFFH
000000H-007FFFH
4KB
8KB
16KB
32KB
32KB
Bottom
Block
July 2020
Rev 1.5
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Operation Features
BY25Q128AS
Table 6 BY25Q128AS Status Register Memory Protection (CMP=1)
Status Register Content
Memory Content
BP4
X
0
BP3
X
0
BP2
0
BP1
0
BP0
0
Blocks
0 to 255
0 to 251
0 to 247
0 to 239
0 to 223
0 to 191
0 to 127
4 to 255
Addresses
Density
Portion
ALL
000000H-FFFFFFH
000000H-FBFFFFH
000000H-F7FFFFH
000000H-EFFFFFH
000000H-DFFFFFH
000000H-BFFFFFH
000000H-7FFFFFH
040000H-FFFFFFH
ALL
16128KB
15872KB
15KB
0
0
1
Lower 63/64
Lower 31/32
Lower 15/16
Lower 7/8
Lower 3/4
Lower 1/2
Upper 63/64
0
0
0
1
0
0
0
0
1
1
0
0
1
0
0
14MB
0
0
1
0
1
12MB
0
0
1
1
0
8MB
0
1
0
0
1
16128KB
0
1
0
1
0
8 to 255
080000H-FFFFFFH
15872KB
Upper 31/32
0
0
0
0
X
1
1
1
1
1
1
1
1
1
1
1
1
1
1
X
0
0
0
0
0
1
1
1
1
1
0
1
1
1
1
0
0
0
1
1
0
0
0
1
1
1
0
0
1
1
0
1
1
0
1
0
1
1
0
1
1
0
1
0
1
1
0
1
X
0
1
0
1
X
0
16 to 255
32 to 255
64 to 255
128 to 255
NONE
100000H-FFFFFFH
200000H-FFFFFFH
400000H-FFFFFFH
800000H-FFFFFFH
NONE
15KB
Upper 15/16
Upper 7/8
14MB
12MB
Upper 3/4
8MB
Upper 1/2
NONE
NONE
0 to 255
0 to 255
0 to 255
0 to 255
0 to 255
0 to 255
0 to 255
0 to 255
0 to 255
0 to 255
000000H-FFEFFFH
000000H-FFDFFFH
000000H-FFBFFFH
000000H-FF7FFFH
000000H-FF7FFFH
001000H-FFFFFFH
002000H-FFFFFFH
004000H-FFFFFFH
008000H-FFFFFFH
008000H-FFFFFFH
16380KB
16376KB
16368KB
16352KB
16352KB
16380KB
16376KB
16368KB
16352KB
16352KB
L-4095/4096
L-2047/2048
L-1023/1024
L-511/512
L-511/512
U-4095/4096
U-2047/2048
U-1023/1024
U-511/512
U-511/512
July 2020
Rev 1.5
17 / 73
Device Identification
BY25Q128AS
6. Device Identification
Three legacy Instructions are supported to access device identification that can indicate the
manufacturer, device type, and capacity (density). The returned data bytes provide the information
as shown in the below table.
Table 7. BY25Q128AS ID Definition table
Operation Code
M7-M0
ID15-ID8
ID7-ID0
9FH
90H/92H/94H
ABH
68
68
40
18
17
17
July 2020
Rev 1.5
18 / 73
Instructions Description
BY25Q128AS
7. Instructions Description
All instructions, addresses and data are shifted in and out of the device, beginning with the most
significant bit on the first rising edge of SCLK after /CS is driven low. Then, the one byte instruction
code must be shifted in to the device, most significant bit first on SI, each bit being latched on the
rising edges of SCLK.
See Table 8, every instruction sequence starts with a one-byte instruction code. Depending on the
instruction, this might be followed by address bytes, or by data bytes, or by both or none. /CS must
be driven high after the last bit of the instruction sequence has been shifted in. For the instruction
of Read, Fast Read, Read Status Register or Release from Deep Power Down, and Read Device
ID, the shifted-in instruction sequence is followed by a data out sequence. /CS can be driven high
after any bit of the data-out sequence is being shifted out.
For the instruction of Page Program, Sector Erase, Block Erase, Chip Erase, Write Status Register,
Write Enable, Write Disable or Deep Power-Down instruction, /CS must be driven high exactly at a
byte boundary, otherwise the instruction is rejected, and is not executed. That is /CS must driven
high when the number of clock pulses after /CS being driven low is an exact multiple of eight. For
Page Program, if at any time the input byte is not a full byte, nothing will happen and WEL will not
be reset.
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
Table 8. Instruction Set Table
Instruction Name
Write Enable
Byte 1
06H
Byte 2
Byte 3
Byte 4
Byte 5
Byte 6
N-Bytes
Write Disable
04H
Read Status
Register-1
Read Status
Register-2
Read Status
Register-3
05H
(S7-S0)
continuous
continuous
continuous
35H
15H
(S15-S8)
(S23-S16)
Write Enable for
Volatile Status
Register
Write Status
Register -1
Write Status
Register-2
50H
01H
(S7-S0)
31H
11H
03H
(S15-S8)
(S23-S16)
A23-A16
Write Status
Register-3
Next
byte
continuous
Read Data
A15-A8
A7-A0
(D7-D0)
Fast Read
Dual Output Fast
Read
0BH
3BH
A23-A16
A23-A16
A15-A8
A15-A8
A7-A0
A7-A0
dummy
dummy
(D7-D0) continuous
(D7-
D0)(1)
Next
byte
(D7-
D0)(3)
Next
byte
Next
byte
Next
byte
continuous
continuous
continuous
continuous
continuous
continuous
continuous
continuous
A7-A0
M7-M0(2)
A15-A8
Dual I/O Fast Read
BBH
6BH
A23-A8(2)
A23-A16
(D7-D0)(1)
A7-A0
Next byte
dummy
Quad Output Fast
Read
A23-A0
M7-M0(4)
A23-A0
Quad I/O Fast Read
EBH
dummy(5)
(D7-D0)(3)
Next byte
Quad I/O Word
Fast Read(7)
Page Program
E7H
02H
dummy(6)
A15-A8
(D7-D0)(3)
A7-A0
Next byte
(D7-D0)
dM7-M0 (4)
A23-A16
Quad Page
Program
Fast Page Program
32H
F2H
A23-A16
A23-A16
A15-A8
A15-A8
A7-A0
A7-A0
(D7-D0)(3) Next
byte
(D7-D0)
Next
byte
Sector Erase
Block Erase(32K)
Block Erase(64K)
Chip Erase
20H
52H
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
D8H
C7/60H
66H
Enable Reset
Reset
99H
Set Burst with Wrap
77H
dummy(6)
W7-W0
Program/Erase
Suspend
Program/Erase
Resume
75H
7AH
B9H
Deep Power-Down
Release From
Deep Power-Down,
And Read Device
ID
Release From
Deep Power-Down
continuous
ABH
ABH
dummy
dummy
dummy
(ID7-ID0)
July 2020
Rev 1.5
20 / 73
Instructions Description
BY25Q128AS
Manufacturer/
Device ID
Manufacturer/
Device ID by Dual
I/O
Manufacturer/
Device ID by Quad
I/O
continuous
(MID7-MID0) (ID7-ID0)
90H
92H
dummy
A23-A8
dummy
00H
(MID7-
MID0),(DID7
-DID0)
A7-A0,
dummy
continuous
continuous
94H
A23-A0,
dummy
dummy(10)
(MID7-MID0)
(DID7-DID0)
JEDEC ID
9FH
5AH
MID7-
MID0
ID15-ID8
ID7-ID0
A7-A0
continuous
continuous
Read Serial Flash
Discoverable
Parameter
A23-A16
A15-A8
Dummy
D7-D0
Erase Security
44H
42H
48H
A23-A16
A23-A16
A23-A16
A15-A8
A15-A8
A15-A8
A7-A0
A7-A0
A7-A0
Registers(8)
Program Security
Registers(8)
continuous
continuous
(D7-D0)
dummy
(D7-D0)
(D7-D0)
Read Security
Registers(8)
Notes:
1. Dual Output data
IO0 = (D6, D4, D2, D0)
IO1 = (D7, D5, D3, D1)
2. Dual Input Address
IO0 = A22, A20, A18, A16, A14, A12, A10, A8, A6, A4, A2, A0, M6, M4, M2, M0
IO1 = A23, A21, A19, A17, A15, A13, A11, A9, A7, A5, A3, A1, M7, M5, M3,M1
3. Quad Output Data
IO0 = (D4, D0,…..)
IO1 = (D5, D1,…..)
IO2 = (D6, D2,…..)
IO3 = (D7, D3,…..)
4. Quad Input Address
IO0 = A20, A16, A12, A8, A4, A0, M4, M0
IO1 = A21, A17, A13, A9, A5, A1, M5, M1
IO2 = A22, A18, A14, A10, A6, A2, M6, M2
IO3 = A23, A19, A15, A11, A7, A3, M7, M3
5. Fast Read Quad I/O Data
IO0 = (x, x, x, x, D4, D0,…)
IO1 = (x, x, x, x, D5, D1,…)
IO2 = (x, x, x, x, D6, D2,…)
IO3 = (x, x, x, x, D7, D3,…)
6. Fast Word Read Quad I/O Data
IO0 = (x, x, D4, D0,…)
IO1 = (x, x , D5, D1,…)
IO2 = (x, x, D6, D2,…)
IO3 = (x, x, D7, D3,…)
7. Fast Word Read Quad I/O Data: the lowest address bit must be 0.
8. Security Registers Address:
Security Register1: A23-A16=00H, A15-A8=00010000b, A7-A0= Byte Address;
Security Register2: A23-A16=00H, A15-A8=00100000b, A7-A0= Byte Address;
Security Register3: A23-A16=00H, A15-A8=00110000b, A7-A0= Byte Address;
9. Dummy bits and Wraps Bits
IO0 = (x, x, x, x, x, x, w4, x)
IO1 = (x, x, x, x, x, x, w5, x)
IO2 = (x, x, x, x, x, x, w6, x)
IO3 = (x, x, x, x, x, x, x,x)
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
10. Address, continuous Read Mode bits, Dummy bits, Manufacture ID and Device ID
IO0 = (A20, A16, A12, A8, A4, A0, M4, M0, x, x, x, x, MID4, MID0, DID4, DID0)
IO1 = (A21, A17, A13, A9, A5, A1, M5, M1, x, x, x, x, MID5, MID1, DID5, DID1)
IO2 = (A22, A18, A14, A10, A6, A2, M6, M2, x, x, x, x, MID6, MID2, DID6, DID2)
IO3 = (A23, A19, A15, A11, A7, A3, M7, M3, x, x, x, x, MID7, MID3, DID7, DID3)
Security Register 0 can be used to store the Flash Discoverable Parameters,
The feature is upon special order, please contact Boya Microelectronics for details.
July 2020
Rev 1.5
22 / 73
Instructions Description
BY25Q128AS
7.1 Configuration and Status Instructions
7.1.1 Write Enable (06H)
See Figure 5, the Write Enable instruction is for setting the Write Enable Latch bit. The Write Enable
Latch bit must be set prior to every Page Program, Sector Erase, Block Erase, Chip Erase, Write
Status Register instruction and Erase/Program Security Registers instruction. The Write Enable
instruction sequence: /CS goes low sending the Write Enable instruction /CS goes high.
Figure 5. Write Enable Sequence Diagram
/CS
0
1
2
3
4
5
6
7
SCLK
Instruction
SI
06H
High_Z
SO
7.1.2 Write Disable (04H)
See Figure 6, the Write Disable instruction is for resetting the Write Enable Latch bit. The Write
Disable instruction sequence: /CS goes low -> sending the Write Disable instruction -> /CS goes
high. The WEL bit is reset by following condition: Power-up and upon completion of the Write Status
Register, Page Program, Sector Erase, Block Erase and Chip Erase, Erase/Program Security
Registers and Reset instructions.
Figure 6. Write Disable Sequence Diagram
/CS
0
1
2
3
4
5
6
7
SCLK
Instruction
SI
04H
High_Z
SO
July 2020
Rev 1.5
23 / 73
Instructions Description
BY25Q128AS
7.1.3 Read Status Register (05H or 35H or 15H)
See Figure 7 the Read Status Register (RDSR) instruction is for reading the Status Register. The
Status Register may be read at any time, even while a Program, Erase or Write Status Register
cycle is in progress. When one of these cycles is in progress, it is recommended to check the Write
in Progress (WIP) bit before sending a new instruction to the device. It is also possible to read the
Status Register continuously. For instruction code “05H”, the SO will output Status Register bits
S7~S0. The instruction code “35H”, the SO will output Status Register bits S15~S8, The instruction
code “15H”, the SO will output Status Register bits S23~16.
Figure 7. Read Status Register Sequence Diagram
/CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15
SCLK
SI
Instruction
05H or 35H or 15H
Register 0/1/2
Register 0/1/2
High_Z
SO
2
4
2
6
5
4
3
1
0
6
5
3
1
0
7
7
MSB
MSB
7.1.4 Write Status Register (01H or 31H or 11H)
See Figure 8, the Write Status Register instruction allows new values to be written to the Status
Register. Before it can be accepted, a Write Enable instruction must previously have been executed.
After the Write Enable instruction has been decoded and executed, the device sets the Write
Enable Latch (WEL).
The Write Status Register instruction has no effect on S23, S20, S19, S18, S17, S16, S15, S1 and
S0 of the Status Register. /CS must be driven high after the eighth bit of the data byte has been
latched in. If not, the Write Status Register instruction is not executed. As soon as /CS is driven
high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write
Status Register cycle is in progress, the Status Register may still be read to check the value of the
Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Write Status
Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch
is reset.
The Write Status Register instruction allows the user to change the values of the Block Protect
(BP4, BP3, BP2, BP1, BP0) bits, to define the size of the area that is to be treated as read-only, as
defined in Table 3. The Write Status Register instruction also allows the user to set or reset the
Status Register Protect (SRP1 and SRP0) bits in accordance with the Write Protect (/WP) signal.
The Status Register Protect (SRP1 and SRP0) bits and Write Protect (/WP) signal allow the device
to be put in the Hardware Protected Mode. The Write Status Register instruction is not executed
once the Hardware Protected Mode is entered.
Figure 8. Write Status Register Sequence Diagram
/CS
2
4
5
6
7
12
15
13 14
1
3
8
9
10 11
0
SCLK
SI
Status Register in
Instruction
5
3
2
01H or 31H or 11H
6
4
1
0
7
MSB
High_Z
SO
July 2020
Rev 1.5
24 / 73
Instructions Description
BY25Q128AS
7.1.5 Write Enable for Volatile Status Register (50H)
See Figure 9, the non-volatile Status Register bits can also be written to as volatile bits.. This gives
more flexibility to change the system configuration and memory protection schemes quickly without
waiting for the typical non-volatile bit write cycles or affecting the endurance of the Status Register
non-volatile bits. Write Enable for Volatile Status Register instruction will not set the Write Enable
Latch bit, it is only valid for the Write Status Registers instruction to change the volatile Status
Register bit values.
Figure 9. Write Enable for Volatile Status Register
/CS
0
1
2
3
4
5
6
7
SCLK
Instruction
SI
50H
High_Z
SO
July 2020
Rev 1.5
25 / 73
Instructions Description
BY25Q128AS
7.2 Read Instructions
7.2.1 Read Data (03H)
See Figure 10, the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0),
each bit being latched-in during the rising edge of SCLK. Then the memory content, at that address,
is shifted out on SO, each bit being shifted out, at a Max frequency fR, during the falling edge of
SCLK. The address is automatically incremented to the next higher address after each byte of data
is shifted out allowing for a continuous stream of data. This means that the entire memory can be
accessed with a single command as long as the clock continues. The command is completed by
driving /CS high. The whole memory can be read with a single Read Data Bytes (READ) instruction.
Any Read Data Bytes (READ) instruction, while an Erase, Program or Write cycle is in progress, is
rejected without having any effects on the cycle that is in progress.
Figure 10. Read Data Bytes Sequence Diagram
/CS
28 29
30 31
32 33 34 35 36 37
38
2
4
5
6
7
1
3
8
9
10
39
0
SCLK
SI
Instruction
03H
24-Bit Address
21
3
2
22
1
0
23
MSB
Data Byte1
High_Z
High_Z
0
6
4
2
5
SO
3
1
7
MSB
July 2020
Rev 1.5
26 / 73
Instructions Description
BY25Q128AS
7.2.2 Fast Read (0BH)
See Figure 11, the Read Data Bytes at Higher Speed (Fast Read) instruction is for quickly reading
data out. It is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in
during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO,
each bit being shifted out, at a Max frequency fc, during the falling edge of SCLK. The first byte
addressed can be at any location. The address is automatically incremented to the next higher
address after each byte of data is shifted out.
Figure 11. Fast Read Sequence Diagram
/CS
28 29
30 31
2
4
5
6
7
1
3
9
8
10
0
SCLK
Instruction
0BH
24-Bit Address
21
3
2
1
0
22
23
SI
High_Z
SO
/CS
32
34 35 36
45
46
33
37 38 39 40
42 43 44
Data byte 1
41
47
SCLK
Dummy Clocks
High_Z
High_Z
High_Z
SI
6
SO
7
5
4
3
2
1
0
July 2020
Rev 1.5
27 / 73
Instructions Description
BY25Q128AS
7.2.3 Dual Output Fast Read (3BH)
See Figure 12, the Dual Output Fast Read instruction is followed by 3-byte address (A23-A0) and
a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents
are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can be at any location.
The address is automatically incremented to the next higher address after each byte of data is
shifted out.
Figure 12. Dual Output Fast Read Sequence Diagram
/CS
2
4
5
6
7
28 29
1
3
30 31
9
0
8
10
SCLK
Instruction
3BH
24-Bit Address
21
2
3
1
0
22
23
SI
SO
/CS
High_Z
32
34 35 36
45
33
37 38 39 40
42 43 44
46
41
47
SCLK
SI
Dummy Clocks
High_Z
High_Z
High_Z
2
2
0
1
6
4
0
4
6
Data Byte 2
Data Byte 1
SO
5
3
5
3
1
7
7
July 2020
Rev 1.5
28 / 73
Instructions Description
BY25Q128AS
7.2.4 Quad Output Fast Read (6BH)
See Figure 13, the Quad Output Fast Read instruction is followed by 3-byte address (A23-A0) and
a dummy byte, each bit being latched in during the rising edge of SCLK, then the memory contents
are shifted out 4-bit per clock cycle from IO3, IO2, IO1 and IO0. The first byte addressed can be at
any location. The address is automatically incremented to the next higher address after each byte
of data is shifted out.
Figure 13. Quad Output Fast Read Sequence Diagram
/CS
8
0
2
3
4
5
6
7
28 29
30 31
1
9
10
24-Bit Address
SCLK
Instruction
SI
(IO0)
21
3
2
1
0
22
6BH
23
High_Z
SO
(IO1)
High_Z
High_Z
/WP
(IO2)
/HOLD
(IO3)
/CS
32
39
33 34
36
40 41
43 44 45 46
37 38
42
35
47
SCLK
Dummy Clocks
High_Z
High_Z
SI
4
0
1
2
3
0
4
0
1
2
3
4
0
1
4
5
(IO0)
High_Z
High_Z
SO
(IO1)
5
6
7
5
5
6
7
1
2
3
/WP
(IO2)
High_Z
High_Z
6
7
2
3
6
7
/HOLD
(IO3)
High_Z
Byte1
Byte3
Byte2
Byte4
July 2020
Rev 1.5
29 / 73
Instructions Description
BY25Q128AS
7.2.5 Dual I/O Fast Read (BBH)
See Figure 14, the Dual I/O Fast Read instruction is similar to the Dual Output Fast Read instruction
but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte 2-
bit per clock by SI and SO, each bit being latched in during the rising edge of SCLK, then the
memory contents are shifted out 2-bit per clock cycle from SI and SO. The first byte addressed can
be at any location. The address is automatically incremented to the next higher address after each
byte of data is shifted out.
Dual I/O Fast Read with “continuous Read Mode”
The Dual I/O Fast Read instruction can further reduce instruction overhead through setting the
“continuous Read Mode” bits (M7-4) after the inputs 3-byte address A23-A0).If the “continuous
Read Mode” bits(M5-4)=(1,0),then the next Dual I/O fast Read instruction (after CS/ is raised and
then lowered) does not require the BBH instruction code. The instruction sequence is shown in the
following Figure15.If the “continuous Read Mode” bits (M5-4) does not equal (1,0), the next
instruction requires the first BBH instruction code, thus returning to normal operation. A “continuous
Read Mode” Reset instruction can be used to reset (M5-4) before issuing normal instruction.
Figure 14. Dual I/O Fast Read Sequence Diagram (Initial command or previous (M5-4)≠(1,0)))
/CS
0
2
4
5
6
7
12
15
21
20
22 23
1
3
9
11
13
16
8
10
14
17 18 19
SCLK
Instruction
BBH
SI
4
2
3
0
1
6
4
5
2
0
6
0
6
2
3
2
0
1
4
4
6
(IO0)
High_Z
SO
(IO1)
7
1
7
5
3
1
7
5
7
5
3
A23-16
A15-8
A7-0
M7-0
/CS
23 24 25 26
28 29 30 31 32 33 34 35 36 37 38 39
27
SCLK
SI
High_Z
High_Z
6
7
2
6
7
4
5
0
6
7
4
5
2
6
7
4
5
0
2
2
0
1
4
5
0
1
(IO0)
SO
(IO1)
3
1
3
3
3
1
Byte 3
Byte 4
Byte 1
Byte 2
July 2020
Rev 1.5
30 / 73
Instructions Description
BY25Q128AS
Figure 15. Dual I/O Fast Read Sequence Diagram (Previous command set (M5-4) =(1,0))
/CS
0
1
2
3
4
5
6
7
8
9 10
2
15
13
14
11 12
SCLK
SI
(IO0)
6
4 2
0
6
2
3
4
2
0
6
4
6
0
1
0
4
SO
(IO1)
5 3
A23-16
7
7
3
3
1
7
5
7
1
5
1
5
A7-0
A15-8
M7-0
/CS
15 16 17 18 19 20 21 22 23
25 26 27 28 29 30 31
24
6
SCLK
SI
(IO0)
6
4 2
0
1
6
7
2
3
2
3
4
5
2
3
0
1
4
5
0
1
0
1
4
6
7
SO
(IO1)
5 3
Byte1
7
7
5
Byte3
Byte2
Byte4
July 2020
Rev 1.5
31 / 73
Instructions Description
BY25Q128AS
7.2.6 Quad I/O Fast Read (EBH)
See Figure 16, the Quad I/O Fast Read instruction is similar to the Dual I/O Fast Read instruction
but with the capability to input the 3-byte address (A23-0) and a “Continuous Read Mode” byte and
4-dummy clock 4-bit per clock by IO0, IO1, IO3, IO4, each bit being latched in during the rising
edge of SCLK, then the memory contents are shifted out 4-bit per clock cycle from IO0, IO1, IO2,
IO3. The first byte addressed can be at any location. The address is automatically incremented to
the next higher address after each byte of data is shifted out. The Quad Enable bit (QE) of Status
Register must be set to enable for the Quad I/O Fast read instruction.
Quad I/O Fast Read with “Continuous Read Mode”
The Quad I/O Fast Read instruction can further reduce instruction overhead through setting the
“Continuous Read Mode” bits (M7-0) after the input Address bits (A23-0), as shown in Figure 16, If
the “Continuous Read Mode” bits (M5-4 )= (1,0), then the next Fast Read Quad I/O instruction(after
/CS is raised and then lowered) does not require the EBH instruction code, The instruction
sequence is shown in the followed Figure 17. If the “Continuous Read Mode” bits M5-4 do not equal
to (1,0), the next instruction requires the first EBH instruction code, thus returning to normal
operation. A “Continuous Read Mode” Reset command can also be used to reset (M5-4) before
issuing normal command.
Figure 16. Quad I/O Fast Read Sequence Diagram (Initial command or previous (M5-4≠(1,0)))
/CS
12 13
23
22
21
9
20
6
8
10 11
15 16 18 19
17
0
1
2
3
4
5
7
14
SCLK
Instruction
EBH
SI
(IO0)
0
0
0
0
4
5
6
7
4
4
4
5
6
7
0
1
2
4
4
0
High_Z
SO
(IO1)
5
6
1
2
3
5
6
7
1
2
3
5
6
7
1
2
3
5
6
1
2
3
1
2
3
High_Z
High_Z
/WP
(IO2)
/HOLD
(IO3)
3
7
7
Dummy
Byte1 Byte2
A23-16 A15-8
A7-0
July 2020
Rev 1.5
32 / 73
Instructions Description
BY25Q128AS
Figure 17. Quad I/O Fast Read Sequence Diagram (Previous command set (M5-4)=(1,0)))
/CS
12 13
10 11
9
6
8
0
1
2
3
4
5
7
14 15
0
SCLK
SI
(IO0)
0
1
4
0
1
2
3
0
4
4
4
0
1
2
3
4
0
1
2
4
SO
(IO1)
5
6
7
5
6
5
5
6
7
5
6
7
5
6
1
2
3
1
2
3
/WP
(IO2)
6
7
2
3
/HOLD
(IO3)
3
7
7
Byte1 Byte2
Dummy
A15-8 A7-0
A23-16
M7-0
Quad I/O Fast Read with “8/16/32/64-Byte Wrap Around”
The Quad I/O Fast Read instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” (77H) instruction prior to EBH. The “Set Burst with Wrap” (77H)
instruction can either enable or disable the “Wrap Around” feature for the following EBH instructions.
When “Wrap Around” is enabled, the data being accessed can be limited to either an 8, 16, 32 or
64-byte section of a 256-byte page. The output data starts at the initial address specified in the
instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap
around to the beginning boundary automatically until /CS is pulled high to terminate the instruction.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address
and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing
multiple read instructions.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used
to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the
wrap around section within a page.
July 2020
Rev 1.5
33 / 73
Instructions Description
BY25Q128AS
7.2.7 Quad I/O Word Fast Read (E7H)
The Quad I/O Word Fast Read instruction is similar to the Quad Fast Read instruction except that
the lowest address bit (A0) must equal 0 and 2-dummy clock. The instruction sequence is shown
in the followed Figure 18, the first byte addressed can be at any location. The address is
automatically incremented to the next higher address after each byte of data is shifted out. The
Quad Enable bit (QE) of Status Register (S9) must be set to enable for the Quad I/O Word Fast
Read instruction.
Quad I/O Word Fast Read with “Continuous Read Mode”
The Quad I/O Word Fast Read instruction can further reduce instruction overhead through setting
the “Continuous Read Mode” bits (M7-0) after the input 3-byte Address bits (A23-0). If the
“Continuous Read Mode” bits (M5-4) = (1, 0), then the next Quad I/O Fast Read instruction (after
/CS is raised and then lowered) does not require the E7H instruction code, the instruction sequence
is shown in the followed Figure 19. If the “Continuous Read Mode” bits M5-4 do not equal to (1,0),
the next instruction requires the first E7H instruction code, thus returning to normal operation. A
“Continuous Read Mode” Reset command can also be used to reset (M5-4) before issuing normal
command.
Figure 18. Quad I/O Word Fast Read Sequence Diagram (Initial command or previous (M5-4)≠
(1,0))
/CS
12 13
23
22
21
9
20
6
8
10 11
15 16 18 19
17
0
1
2
3
4
5
7
14
SCLK
Instruction
E7H
SI
(IO0)
4
4
4
4
5
6
7
0
1
2
0
4
0
0
0
1
0
4
4
0
High_Z
SO
(IO1)
1
5
6
7
5
6
7
5
6
7
1
2
3
5
6
7
5
6
7
1
2
3
5
6
1
1
2
3
High_Z
High_Z
/WP
(IO2)
2
3
2
3
2
3
/HOLD
(IO3)
3
7
Dummy
M7-M0
Byte1
Byte2 Byte3
A23-16
A15-8
A7-0
Figure 19. Quad I/O word Fast Read Sequence Diagram (Previous command set (M5-4) =(1,0))
/CS
12 13
10 11
9
6
8
0
1
2
3
4
5
7
14 15
0
SCLK
SI
(IO0)
0
1
4
0
1
2
3
0
4
0
1
4
4
4
0
1
2
3
4
0
1
2
4
SO
(IO1)
5
6
7
5
6
5
5
6
7
5
6
7
5
5
6
1
2
3
1
2
3
/WP
(IO2)
2
3
6
7
2
3
6
7
/HOLD
(IO3)
3
7
7
Dummy
Byte2
Byte1
Byte3
A15-8 A7-0
A23-16
M7-0
July 2020
Rev 1.5
34 / 73
Instructions Description
BY25Q128AS
Quad I/O Word Fast Read with “8/16/32/64-Byte Wrap Around” in standard SPI mode
The Quad I/O Fast Read instruction can also be used to access a specific portion within a page by
issuing a “Set Burst with Wrap” (77H) instruction prior to E7H. The “Set Burst with Wrap” (77H)
instruction can either enable or disable the “Wrap Around” feature for the following E7H instructions.
When “Wrap Around” is enabled, the data being accessed can be limited to either an 8, 16, 32 or
64-byte section of a 256-byte page. The output data starts at the initial address specified in the
instruction, once it reaches the ending boundary of the 8/16/32/64-byte section, the output will wrap
around to the beginning boundary automatically until /CS is pulled high to terminate the instruction.
The Burst with Wrap feature allows applications that use cache to quickly fetch a critical address
and then fill the cache afterwards within a fixed length (8/16/32/64-byte) of data without issuing
multiple read instructions.
The “Set Burst with Wrap” instruction allows three “Wrap Bits”, W6-4 to be set. The W4 bit is used
to enable or disable the “Wrap Around” operation while W6-5 are used to specify the length of the
wrap around section within a page.
July 2020
Rev 1.5
35 / 73
Instructions Description
BY25Q128AS
7.2.8 Set Burst with Wrap (77H)
See Figure 20, The Set Burst with Wrap instruction is used in conjunction with “Quad I/O Fast Read”
and “Quad I/O Word Fast Read” instruction to access a fixed length of 8/16/32/64-byte section
within a 256-byte page, in standard SPI mode.
The Set Burst with Wrap instruction sequence:/CS goes low ->Send Set Burst with Wrap instruction
->Send24 Dummy bits ->Send 8 bits “Wrap bits”->/CS goes high.
If W6-4 is set by a Set Burst with Wrap instruction, all the following “Fast Read Quad I/O” and “Word
Read Quad I/O” instructions will use the W6-4 setting to access the 8/16/32/64-byte section within
any page. To exit the “Wrap Around” function and return to normal read operation, another Set
Burst with Wrap instruction should be issued to set W4=1. The default value of W4 upon power on
is 1.
W4 = 0
Wrap Around
W4 =1 (DEFAULT)
W6 , W5
Wrap Length
Wrap Around
Wrap Length
0
0
Yes
Yes
Yes
Yes
8-byte
No
N/A
0
1
1
1
0
1
16-byte
32-byte
64-byte
No
No
No
N/A
N/A
N/A
Figure 20. Set Burst with Wrap Sequence Diagram
/CS
7
0
1
2
4
8
9
11
12
13 14
15
5
6
10
3
SCLK
Instruction
77H
SI
(IO0)
High_Z
x
x
x
x
x
x
x
x
W4
W5
x
High_Z
High_Z
x
x
x
x
SO
(IO1)
x
x
x
x
x
High_Z
High_Z
High_Z
/WP
(IO2)
x
x
x
W6
/HOLD
(IO3)
High_Z
x
x
x
x
x
x
x
x
Byte1
Byte3
Byte2
Byte4
July 2020
Rev 1.5
36 / 73
Instructions Description
BY25Q128AS
7.3 ID and Security Instructions
7.3.1 Read Manufacture ID/ Device ID (90H)
See Figure 21, The Read Manufacturer/Device ID instruction is an alternative to the Release from
Power-Down/Device ID instruction that provides both the JEDEC assigned Manufacturer ID and
the specific Device ID.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “90H” followed
by a 24-bit address (A23-A0) of 000000H. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.
Figure 21. Read Manufacture ID/ Device ID Sequence Diagram
/CS
0
1
2
3
4
5
6
7
8
9
10
28 29 30 31
SCLK
Instruction
24-Bit Address
SI
3
1
22 21
2
0
23
90H
High_Z
SO
/CS
32 33 34
35
37 38 39
41
45
42 43 44
46 47
36
40
SCLK
SI
Device ID
3
5
Manufacturer ID
2
1
0
2
0
SO
6
1
5
4
4
7
3
7
6
July 2020
Rev 1.5
37 / 73
Instructions Description
BY25Q128AS
7.3.2 Dual I/O Read Manufacture ID/ Device ID (92H)
See Figure 22, the Dual I/O Read Manufacturer/Device ID instruction is an alternative to the
Release from Power-Down/Device ID instruction that provides both the JEDEC assigned
Manufacturer ID and the specific Device ID by Dual I/O.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “92H” followed
by a 24-bit address (A23-A0) of 000000H. If the 24-bit address is initially set to 000001H, the Device
ID will be read first.
Figure 22. Dual I/O Read Manufacture ID/ Device ID Sequence Diagram
/CS
0
2
4
5
6
7
12
15
21
20
22 23
1
3
9
11
13
16
8
10
14
17 18 19
SCLK
Instruction
92H
SI
4
2
3
0
6
4
5
2
0
0
6
6
2
2
0
1
4
4
6
(IO0)
High_Z
SO
(IO1)
7
1
7
5
3
7
5
3
1
7
5
3
1
A23-16
A15-8
A7-0
Dummy
/CS
39
32
28 29 30 31
40 41 42 43 44 45 46 47
23 24 25 26
27
SCLK
SI
High_Z
6
7
2
6
7
0
4
5
2
4
5
6
7
4
5
0
6
7
2
4
5
0
1
2
0
1
(IO0)
High_Z
SO
(IO1)
1
3
3
3
3
1
MFR and Device ID
(repeat)
MFR ID(repeat)
Device ID(repeat)
MFR ID
Device ID
July 2020
Rev 1.5
38 / 73
Instructions Description
BY25Q128AS
7.3.3 Quad I/O Read Manufacture ID/ Device ID (94H)
See Figure 23, the Quad I/O Read Manufacturer/Device ID instruction is an alternative to the
Release from Power-Down/Device ID instruction that provides both the JEDEC assigned
Manufacturer ID and the specific Device ID by quad I/O.
The instruction is initiated by driving the /CS pin low and shifting the instruction code “94H” followed
by a 24-bit address (A23-A0) of 000000H and4 dummy clocks. If the 24-bit address is initially set
to 000001H, the Device ID will be read first.
Figure 23. Quad I/O Read Manufacture ID/ Device ID Sequence Diagram
/CS
0
2
4
5
6
7
12
15
21
0
1
3
9
11
13
16
20
4
8
10
14
17 18 19
22 23
SCLK
Instruction
94H
SI
(IO0)
0
4
0
4
0
4
0
4
4
0
High_Z
High_Z
SO
5
6
5
6
1
2
5
6
1
2
1
2
1
2
5
6
1
2
5
6
1
2
5
6
(IO1)
WP
(IO2)
High_Z
HOLD
(IO3)
7
7
3
7
3
3
3
7
3
7
3
7
Device ID
MFR ID
dummy
A7-0
A23-16
dummy
A15-8
/CS
23 24 25 26
28 29 30 31
27
SCLK
SI
(IO0)
4
0
0
4
4
4
0
0
SO
5
6
1
1
2
5
6
1
2
5
6
1
2
5
6
(IO1)
2
WP
(IO2)
7
3
3
7
3
7
3
7
HOLD
(IO3)
MFR ID DID ID MFR ID DID ID
(repeat) (repeat) (repeat) (repeat)
July 2020
Rev 1.5
39 / 73
Instructions Description
BY25Q128AS
7.3.4 Read JEDEC ID (9FH)
The JEDEC ID instruction allows the 8-bit manufacturer identification to be read, followed by two
bytes of device identification. The device identification indicates the memory type in the first byte,
and the memory capacity of the device in the second byte. JEDEC ID instruction while an Erase or
Program cycle is in progress, is not decoded, and has no effect on the cycle that is in progress.
The JEDEC ID instruction should not be issued while the device is in Deep Power-Down Mode.
See Figure 24, The device is first selected by driving /CS to low. Then, the 8-bit instruction code for
the instruction is shifted in. This is followed by the 24-bit device identification, stored in the memory,
being shifted out on Serial Data Output, each bit being shifted out during the falling edge of Serial
Clock. The JEDEC ID instruction is terminated by driving /CS to high at any time during data output.
When /CS is driven high, the device is put in the Standby Mode. Once in the Standby Mode, the
device waits to be selected, so that it can receive, decode and execute instructions.
Figure 24. JEDEC ID Sequence Diagram
/CS
0
1
6
2
3
5
7
10 11 12 13 14
Manufacturer ID
4
8
9
15
SCLK
SI
9FH
Instruction
0
1
6
5
2
3
7
4
SO
MSB
24 25 26 27
28
/CS
30 31
29
22 23
20
19
21
16 17 18
SCLK
SI
Capacity ID7-ID0
Memory Type ID15-ID8
SO
5
4
3
2
1
0
5
4
3
2
1
0
6
7
7
6
MSB
MSB
July 2020
Rev 1.5
40 / 73
Instructions Description
BY25Q128AS
7.3.5 Read Unique ID Number (4Bh)
The Read Unique ID Number instruction accesses a factory-set read-only 64-bit number that is
unique to each BY25Q128 device. The ID number can be used in conjunction with user software
methods to help prevent copying or cloning of a system. The Read Unique ID instruction is initiated
by driving the /CS pin low and shifting the instruction code “4Bh” followed by a four bytes of dummy
clocks. After which, the 64-bit ID is shifted out on the falling edge of SCLK as shown in Figure 25.
Figure 25. Read Unique ID Sequence Diagram
/CS
0
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17
18 19 20 21
Dummy Byte 2
22 23
Mode 3
Mode 0
SCLK
SI
Instruction
4BH
Dummy Byte 1
SO
High_Z
/CS
23 24 25 26 27 28
29 30 31 32 33 34 35
36 37
103
100 101 102
38 39 40 41
Mode 3
Mode 0
SCLK
Dummy Byte 3
Dummy Byte 4
SI
SO
High_Z
63 62
MSB
2
1
0
64-bit Unique
Serial Number
July 2020
Rev 1.5
41 / 73
Instructions Description
BY25Q128AS
7.3.6 Deep Power-Down (B9H)
Although the standby current during normal operation is relatively low, standby current can be
further reduced with the Deep Power-down instruction. The lower power consumption makes the
Deep Power-down (DPD) instruction especially useful for battery powered applications (see ICC1
and ICC2). The instruction is initiated by driving the /CS pin low and shifting the instruction code
“B9h” as shown in Figure 26
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Deep
Power down instruction will not be executed. After /CS is driven high, the power-down state will be
entered within the time duration of tDP. While in the power-down state only the Release from Deep
Power-down / Device ID instruction, which restores the device to normal operation, will be
recognized. All other Instructions are ignored. This includes the Read Status Register instruction,
which is always available during normal operation. Ignoring all but one instruction also makes the
Power Down state a useful condition for securing maximum write protection. The device always
powers-up in the normal operation with the standby current of ICC1.
Figure 26. Deep Power-Down Sequence Diagram
/CS
tDP
1
0
2
3 4
5
6
7
SCLK
SI
Instruction
B9H
Stand-by mode
Power-down mode
July 2020
Rev 1.5
42 / 73
Instructions Description
BY25Q128AS
7.3.7 Release from Deep Power-Down/Read Device ID (ABH)
The Release from Power-Down or Device ID instruction is a multi-purpose instruction. It can be
used to release the device from the Power-Down state or obtain the devices electronic identification
(ID) number.
See Figure 27, to release the device from the Power-Down state, the instruction is issued by driving
the /CS pin low, shifting the instruction code “ABH” and driving /CS high Release from Power-Down
will take the time duration of tRES1 (See AC Characteristics) before the device will resume normal
operation and other instruction are accepted. The /CS pin must remain high during the tRES1 time
duration.
When used only to obtain the Device ID while not in the Power-Down state, the instruction is
initiated by driving the /CS pin low and shifting the instruction code “ABH” followed by 3-dummy
byte. The Device ID bits are then shifted out on the falling edge of SCLK with most significant bit
(MSB) first as shown in Figure 28. The Device ID value for the BY25Q128AS is listed in
Manufacturer and Device Identification table. The Device ID can be read continuously. The
instruction is completed by driving /CS high.
When used to release the device from the Power-Down state and obtain the Device ID, the
instruction is the same as previously described, and shown in Figure 28, except that after /CS is
driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After this
time duration the device will resume normal operation and other instruction will be accepted. If the
Release from Power-Down/Device ID instruction is issued while an Erase, Program or Write cycle
is in process (when WIP equal 1) the instruction is ignored and will not have any effects on the
current cycle.
Figure 27. Release Power-Down Sequence Diagram
/CS
tRES1
1
0
2
3 4
5
6
7
SCLK
SI
Instruction
ABH
Power-down mode
Stand-by mode
Figure 28. Release Power-Down/Read Device ID Sequence Diagram
/CS
0
1
2
3
4
5
6
7
8
9
37
29
34 35
36
31
38
39
30
32 33
SCLK
SI
Instruction
ABH
3 Dummy Bytes
23 22
MSB
tRES2
2
1
0
Device ID
3
High_Z
SO
2
0
1
7
6
5
4
MSB
Deep Power-down mode
Stand-by mode
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.3.8 Read Security Registers (48H)
See Figure 29, the Read Security Registers instruction is similar to Fast Read instruction. The
instruction is followed by a 3-byte address (A23-A0) and a dummy byte, each bit being latched-in
during the rising edge of SCLK. Then the memory content, at that address, is shifted out on SO,
each bit being shifted out, at a Max frequency fC, during the falling edge of SCLK. The first byte
addressed can be at any location. The address is automatically incremented to the next higher
address after each byte of data is shifted out. Once the A7-A0 address reaches the last byte of the
register (Byte FFH), it will reset to 000H, the instruction is completed by driving /CS high.
Address
A23-A16
A15-A12
A11-A8
A7-A0
Security Registers 1
Security Registers 2
Security Registers 3
00H
00H
00H
0001
0010
0011
0000
0000
0000
Byte Address
Byte Address
Byte Address
Figure 29. Read Security Registers instruction Sequence Diagram
/CS
0
1
2
3
4
5
6
7
8
9
28 29 30 31
SCLK
Instruction
24-Bit Address
SI
48H
23 22
3
2
1
0
High_Z
SO
/CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Dummy Byte
SCLK
7
6
5
4
3
2
1
0
SI
Data Byte 1
SO
7
6
5
4
3
2
1
0
MSB
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.3.9 Erase Security Registers (44H)
The BY25Q128AS provides three 256-byte Security Registers which can be erased and
programmed individually. These registers may be used by the system manufacturers to store
security and other important information separately from the main memory array.
See Figure 30, the Erase Security Registers instruction is similar to Sector/Block Erase instruction.
A Write Enable instruction must previously have been executed to set the Write Enable Latch bit.
The Erase Security Registers instruction sequence: /CS goes low sending Erase Security Registers
instruction /CS goes high. /CS must be driven high after the eighth bit of the instruction code has
been latched in otherwise the Erase Security Registers instruction is not executed. As soon as /CS
is driven high, the self-timed Erase Security Registers cycle (whose duration is tSE) is initiated.
While the Erase Security Registers cycle is in progress, the Status Register may be read to check
the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Erase Security Registers cycle, and is 0 when it is completed. At some unspecified time
before the cycle is completed, the Write Enable Latch bit is reset. The Security Registers Lock Bit
(LB) in the Status Register can be used to OTP protect the security registers. Once the LB bit is
set to 1, the Security Registers will be permanently locked; the Erase Security Registers instruction
will be ignored.
Address
A23-A16
A15-A12
A11-A8
A7-A0
Security Registers 1
Security Registers 2
Security Registers 3
00H
00H
00H
0001
0010
0011
0000
0000
0000
Byte Address
Byte Address
Byte Address
Figure 30. Erase Security Registers instruction Sequence Diagram
/CS
0 1 2 3
4
5 6
7
8 9
29 30 31
SCLK
SI
Instruction
44H
24-Bit Address
23 22 2 1 0
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.3.10 Program Security Registers (42H)
See Figure 31, the Program Security Registers instruction is similar to the Page Program instruction.
It allows from 1 to 256 bytes Security Registers data to be programmed. A Write Enable instruction
must previously have been executed to set the Write Enable Latch bit before sending the Program
Security Registers instruction. The Program Security Registers instruction is entered by driving /CS
Low, followed by the instruction code (42H), 3-byte address and at least one data byte on SI. As
soon as /CS is driven high, the self-timed Program Security Registers cycle (whose duration is tPP)
is initiated. While the Program Security Registers cycle is in progress, the Status Register may be
read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1
during the self-timed Program Security Registers cycle, and is 0 when it is completed. At some
unspecified time before the cycle is completed, the Write Enable Latch bit is reset.
If the Security Registers Lock Bit (LB3/LB2/LB1) is set to 1, the Security Registers will be
permanently locked. Program Security Registers instruction will be ignored.
Address
A23-A16
A15-A12
A11-A8
A7-A0
Security Registers 1
Security Registers 2
Security Registers 3
00H
00H
00H
0001
0010
0011
0000
0000
0000
Byte Address
Byte Address
Byte Address
Figure 31. Program Security Registers instruction Sequence Diagram
/CS
39
38
4
35
36
3
9
30 31
2
5
6
7
10
28 29
34
0
1
8
32 33
37
SCLK
Instruction
42H
24-Bit Address
Data Byte 1
23 22 21
MSB
2
1
1
3
2
0
0
6
4
3
7
5
SI
/CS
MSB
49
52
51
55
53 54
42
45
41
43 44
46 47
50
40
48
SCLK
SI
Data Byte 2
Data Byte 3
Data Byte 256
7
5
4
3
2
1
3
6
3
0
4
2
1
7
4
2
0
5
5
6
6
0
1
7
MSB
MSB
MSB
July 2020
Rev 1.5
46 / 73
Instructions Description
BY25Q128AS
7.3.11 Enable Reset (66H) and Reset Device (99H)
Because of the small package and the limitation on the number of pins, the BY25Q128AS provides
a software Reset instruction instead of a dedicated RESET pin. Once the software Reset instruction
is accepted, any on-going internal operations will be terminated and the device will return to its
default power-on state and lose all the current volatile settings, such as Volatile Status Register
bits, Write Enable Latch (WEL) status, Program/Erase Suspend status, Continuous Read Mode bit
setting (M7-M0) and Wrap Bit setting (W6-W4).
To avoid accidental reset, both “Enable Reset (66h)” and “Reset (99h)” instructions must be issued
in sequence. Any other commands other than “Reset (99h)” after the “Enable Reset (66h)”
command will disable the “Reset Enable” state. A new sequence of “Enable Reset (66h)” and
“Reset (99h)” is needed to reset the device. Once the Reset command is accepted by the device,
the device will take approximately 30us to reset. During this period, no command will be accepted.
The Enable Reset (66h) and Reset (99h) instruction sequence is shown in Figure 32.
Data corruption may happen if there is an on-going or suspended internal Erase or Program
operation when Reset command sequence is accepted by the device. It is recommended to check
the BUSY bit and the SUS bit in Status Register before issuing the Reset command sequence.
Figure 32. Enable Reset (66h) and Reset (99h) Command Sequence
/CS
0
1
0
1
2
3
4
5
6
7
2
3
4
5
6
7
SCLK
SI
Instruction
66H
Instruction
99h
July 2020
Rev 1.5
47 / 73
Instructions Description
BY25Q128AS
7.3.12 Read Serial Flash Discoverable Parameter (5AH)
See Figure 33,The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent
method of describing the functional and feature capabilities of serial flash devices in a standard
set of internal parameter tables. These parameter tables can be interrogated by host system
software to enable adjustments needed to accommodate divergent features from multiple
vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68
on CFI. SFDP is a standard of JEDEC Standard No.216.
Figure 33. Read Serial Flash Discoverable Parameter command Sequence Diagram
/CS
0
1
2
3
4
5
6
7
8
9
28 29 30 31
SCLK
Instruction
24-Bit Address
SI
5AH
23 22
3
2
1
0
High_Z
SO
/CS
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
Dummy Byte
SCLK
7
6
5
4
3
2
1
0
SI
Data Byte 1
SO
7
6
5
4
3
2
1
0
MSB
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.4 Program and Erase Instructions
7.4.1 Page Program (02H)
The Page Program instruction is for programming the memory. A Write Enable instruction must
previously have been executed to set the Write Enable Latch bit before sending the Page Program
instruction.
See Figure 34, the Page Program instruction is entered by driving /CS Low, followed by the
instruction code, 3-byte address and at least one data byte on SI. If the 8 least significant address
bits (A7-A0) are not all zero, all transmitted data that goes beyond the end of the current page are
programmed from the start address of the same page (from the address whose 8 least significant
bits (A7-A0) are all zero). /CS must be driven low for the entire duration of the sequence. The Page
Program instruction sequence: /CS goes low-> sending Page Program instruction ->3-byte address
on SI ->at least 1 byte data on SI-> /CS goes high.
If more than 256 bytes are sent to the device, previously latched data are discarded and the last
256 data bytes are guaranteed to be programmed correctly within the same page. If less than 256
data bytes are sent to device, they are correctly programmed at the requested addresses without
having any effects on the other bytes of the same page. /CS must be driven high after the eighth
bit of the last data byte has been latched in; otherwise the Page Program instruction is not executed.
As soon as /CS is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated.
While the Page Program cycle is in progress, the Status Register may be read to check the value
of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch bit is reset.
A Page Program instruction applied to a page which is protected by the Block Protect (BP4, BP3,
BP2, BP1, BP0) bits (see Table 5&6) is not executed.
Figure 34. Page Program Sequence Diagram
/CS
39
38
4
35
36
3
9
30 31
2
5
6
7
10
28 29
34
0
1
8
32 33
37
SCLK
SI
Instruction
02H
24-Bit Address
Data Byte 1
4
23 22 21
MSB
1
2
1
3
2
0
0
6
3
7
5
MSB
/CS
49
52
51
55
53 54
42
45
41
43 44
46 47
50
40
48
SCLK
SI
Data Byte 2
Data Byte 3
Data Byte 256
7
5
4
3
2
1
4
3
1
6
4
3
0
2
7
2
6
0
6
5
0
5
1
7
MSB
MSB
MSB
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.4.2 Quad Page Program (32H)
The Quad Page Program instruction is for programming the memory using for pins: IO0, IO1, IO2
and IO3. To use Quad Page Program the Quad enable in status register Bit9 must be set (QE=1).
A Write Enable instruction must previously have been executed to set the Write Enable Latch bit
before sending the Page Program instruction. The Quad Page Program instruction is entered by
driving /CS Low, followed by the command code (32H), three address bytes and at least one data
byte on IO pins.
The instruction sequence is shown in Figure 35, .If more than 256 bytes are sent to the device,
previously latched data are discarded and the last 256 data bytes are guaranteed to be
programmed correctly within the same page. If less than 256 data bytes are sent to device, they
are correctly programmed at the requested addresses without having any effects on the other bytes
of the same page. /CS must be driven high after the eighth bit of the last data byte has been latched
in; otherwise the Quad Page Program instruction is not executed.
As soon as /CS is driven high, the self-timed Quad Page Program cycle (whose duration is tPP) is
initiated. While the Quad Page Program cycle is in progress, the Status Register may be read to
check the value of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the
self-timed Quad Page Program cycle, and is 0 when it is completed. At some unspecified time
before the cycle is completed, the Write Enable Latch bit is reset. A Quad Page Program instruction
applied to a page which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see
Table 5&6) is not executed
Figure 35.Quad Page Program Sequence Diagram
/CS
0
2
4
5
6
7
31
37
38 39
1
3
32
8
30
33 34 35
36
SCLK
Instruction
32H
24-bits address
SI
(IO0)
0
4
0
23 22
0
4
4
1
0
0
4
High_Z
High_Z
SO
5
6
1
2
5
1
2
5
6
1
2
5
6
1
2
(IO1)
WP
(IO2)
6
High_Z
HOLD
(IO3)
7
3
7
3
7
3
7
3
Byte1 Byte2
536 537 538 539 540 541 542 543
535
/CS
48
40 41 42
44 45 46 47
43
SCLK
SI
High_Z
High_Z
4
4
4
0
0
4
0
4
0
0
4
4
0
0
4
0
(IO0)
SO
(IO1)
5
1
1
2
1
2
5
5
5
1
2
1
2
5
6
5
5
6
1
2
5
6
1
2
1
2
High_Z
High_Z
WP
(IO2)
6
6
2
6
6
6
HOLD
(IO3)
3
3
3
7
7
7
3
7
3
3
7
7
7
3
7
3
Byte 5
Byte 6
Byte 253
Byte 256
July 2020
Rev 1.5
50 / 73
Instructions Description
BY25Q128AS
7.4.3 Fast Page Program (F2H)
The Fast Page Program instruction is used to program the memory. A Write Enable instruction must
previously have been executed to set the Write Enable Latch bit before sending the Page Program
instruction.
The Fast Page Program instruction is entered by driving /CS Low, followed by the instruction code,
3-byte address and at least one data byte on SI. If the 8 least significant address bits (A7-A0) are
not all zero, all transmitted data that goes beyond the end of the current page are programmed
from the start address of the same page (from the address whose 8 least significant bits (A7-A0)
are all zero). /CS must be driven low for the entire duration of the sequence.
The Fast Page Program instruction sequence: /CS goes low ->sending Page Program instruction->
3-byte address on SI-> at least 1 byte data on SI ->/CS goes high.
The command sequence is shown in Figure 36, If more than 256 bytes are sent to the device,
previously latched data are discarded and the last 256 data bytes are guaranteed to be
programmed correctly within the same page. If less than 256 data bytes are sent to device, they
are correctly programmed at the requested addresses without having any effects on the other bytes
of the same page. /CS must be driven high after the eighth bit of the last data byte has been latched
in; otherwise the Fast Page Program instruction is not executed.
As soon as /CS is driven high, the self-timed Page Program cycle (whose duration is tPP) is initiated.
While the Page Program cycle is in progress, the Status Register may be read to check the value
of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Page
Program cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the Write Enable Latch bit is reset.
A Fast Page Program instruction applied to a page which is protected by the Block Protect (BP4,
BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed.
Figure 36. Fast Page Program Sequence Diagram
/CS
39
38
4
35
36
3
9
30 31
2
5
6
7
10
28 29
34
0
1
8
32 33
37
SCLK
SI
Instruction
F2H
24-Bit Address
Data Byte 1
4
23 22 21
MSB
1
2
1
3
2
0
0
6
3
7
5
MSB
/CS
49
52
51
55
53 54
42
45
41
43 44
46 47
50
40
48
SCLK
SI
Data Byte 2
Data Byte 3
Data Byte 256
7
5
4
3
2
1
4
3
1
6
4
3
0
2
7
2
6
0
6
5
0
5
1
7
MSB
MSB
MSB
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.4.4 Sector Erase (20H)
The Sector Erase instruction is for erasing the all data of the chosen sector. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit. The Sector Erase
instruction is entered by driving /CS low, followed by the instruction code, and 3-address byte on
SI. Any address inside the sector is a valid address for the Sector Erase instruction. /CS must be
driven low for the entire duration of the sequence.
See Figure 37, The Sector Erase instruction sequence: /CS goes low-> sending Sector Erase
instruction-> 3-byte address on SI ->/CS goes high. /CS must be driven high after the eighth bit of
the last address byte has been latched in; otherwise the Sector Erase instruction is not executed.
As soon as /CS is driven high, the self-timed Sector Erase cycle (whose duration is tSE) is initiated.
While the Sector Erase cycle is in progress, the Status Register may be read to check the value of
the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-timed Sector
Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is completed,
the Write Enable Latch bit is reset. A Sector Erase instruction applied to a sector which is protected
by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not executed.
Figure 37. Sector Erase Sequence Diagram
/CS
0 1 2 3
4
5 6
7
8 9
29 30 31
2 1 0
SCLK
SI
Instruction
20H
24-Bit Address
23 22
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.4.5 32KB Block Erase (52H)
The 32KB Block Erase instruction is for erasing the all data of the chosen block. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit. The 32KB Block
Erase instruction is entered by driving /CS low, followed by the instruction code, and 3-byte address
on SI. Any address inside the block is a valid address for the 32KB Block Erase instruction. /CS
must be driven low for the entire duration of the sequence.
See Figure 38, the 32KB Block Erase instruction sequence: /CS goes low ->sending 32KB Block
Erase instruction ->3-byte address on SI ->/CS goes high. /CS must be driven high after the eighth
bit of the last address byte has been latched in; otherwise the 32KB Block Erase instruction is not
executed. As soon as /CS is driven high, the self-timed Block Erase cycle (whose duration is tBE)
is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check
the value of the Write in Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-
timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch bit is reset. A 32KB Block Erase instruction applied to a block
which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not
executed.
Figure 38. 32KB Block Erase Sequence Diagram
/CS
0 1 2 3
4
5 6
7
8 9
29 30 31
2 1 0
SCLK
SI
Instruction
52H
24-Bit Address
23 22
July 2020
Rev 1.5
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Instructions Description
BY25Q128AS
7.4.6 64KB Block Erase (D8H)
The 64KB Block Erase instruction is for erasing the all data of the chosen block. A Write Enable
instruction must previously have been executed to set the Write Enable Latch bit. The 64KB Block
Erase instruction is entered by driving /CS low, followed by the instruction code, and 3-byte address
on SI. Any address inside the block is a valid address for the 64KB Block Erase instruction. /CS
must be driven low for the entire duration of the sequence.
See Figure 39, the 64KB Block Erase instruction sequence: /CS goes low sending 64KB Block
Erase instruction 3-byte address on SI /CS goes high. /CS must be driven high after the eighth bit
of the last address byte has been latched in; otherwise the 64KB Block Erase instruction is not
executed. As soon as /CS is driven high, the self-timed Block Erase cycle (whose duration is tBE)
is initiated. While the Block Erase cycle is in progress, the Status Register may be read to check
the value of the Write in Progress (WIP) bit. The Write in Progress (WIP) bit is 1 during the self-
timed Block Erase cycle, and is 0 when it is completed. At some unspecified time before the cycle
is completed, the Write Enable Latch bit is reset. A 64KB Block Erase instruction applied to a block
which is protected by the Block Protect (BP4, BP3, BP2, BP1, BP0) bits (see Table 5&6) is not
executed.
Figure 39 64KB Block Erase Sequence Diagram
/CS
0 1 2 3
4
5 6
7
8 9
29 30 31
2 1 0
SCLK
SI
Instruction
D8H
24-Bit Address
23 22
July 2020
Rev 1.5
54 / 73
Instructions Description
BY25Q128AS
7.4.7 Chip Erase (60/C7H)
The Chip Erase instruction sets all memory within the device to the erased state of all 1s (FFh). A
Write Enable instruction must be executed before the device will accept the Chip Erase Instruction
(Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low and
shifting the instruction code “C7h” or “60h”. The Chip Erase instruction sequence is shown in Figure
40.
The /CS pin must be driven high after the eighth bit has been latched. If this is not done the Chip
Erase instruction will not be executed. After /CS is driven high, the self-timed Chip Erase instruction
will commence for a time duration of tCE. While the Chip Erase cycle is in progress, the Read
Status Register instruction may still be accessed to check the status of the WIP bit.
The WIP bit is a 1 during the Chip Erase cycle and becomes a 0 when finished and the device is
ready to accept other Instructions again. After the Chip Erase cycle has finished the Write Enable
Latch (WEL) bit in the Status Register is cleared to 0. The Chip Erase instruction is executed only
if all Block Protect (BP2, BP1, and BP0) bits are 0.The Chip Erase instruction is ignored if one or
more sectors are protected.
Figure 40. Chip Erase Sequence Diagram
/CS
0
1
2
3
4
5
6
7
SCLK
Instruction
SI
60/C7H
High_Z
SO
July 2020
Rev 1.5
55 / 73
Instructions Description
BY25Q128AS
7.4.8 Erase / Program Suspend (75H)
The Erase/Program Suspend instruction allows the system to interrupt a Sector or Block Erase
operation, then read from or program data to any other sector/block which is not in the same big
block(4Mbit). The Erase/Program Suspend instruction also allows the system to interrupt a Page
Program operation and then read from any other page or erase any other sector or block. The
Erase/Program Suspend instruction sequence is shown in Figure 41
The Write Status Registers instruction (01h) and Erase instructions (20h, 52h, D8h, C7h, 60h, 44h)
are not allowed during Erase Suspend. Erase Suspend is valid only during the Sector or Block
erase operation. If written during the Chip Erase operation, the Erase Suspend instruction is
ignored. The Write Status Registers instruction (01h), and Program instructions (02h, 42h, 32h,
F2h) are not allowed during Program Suspend. Program Suspend is valid only during the Page
Program operation. Write status register operation can't be suspended.
Figure 41. Erase/Program Suspend Command Sequence
/CS
0
1
0
1
2
3
4
5
6
7
2
3
4
5
6
7
SCLK
SI
Instruction
75H
tSUS
Instruction During Suspend
Table 9, Readable or Erasable Area of Memory While a Program Operation is Suspended
Readable or Erasable Region
Suspended operation
Of Memory Array
Page Program
Fast Page Program
Quad Page Program
All but the Page being programmed
All but the Page being programmed
All but the Page being programmed
Note1: If read the page being programmed, read instruction will be executed, but the data output
may be wrong.
Note2: If erase a sector/block that including the page being programmed, the erase instruction
will be ignored.
Table 10, Readable or Programmable Area of Memory While an Erase Operation is
Suspended
Readable or Programmable Region
Suspended operation
Of Memory Array
Sector Erase(4KB)
Block Erase(32KB)
Block Erase(64KB)
All but the Big Block(4Mbit) being Erased
All but the Big Block(4Mbit) being Erased
All but the Big Block(4Mbit) being Erased
Note3: If read data from the same Big Block(4Mbit), read instruction will be executed, but the data
output may be wrong.
Note4: If program a page in the same sector/block, the program instruction will be ignored.
Note5: If program a page in other sector/block in the same big block(4Mbit), the program
instruction will be executed, but it may be timeout, or the data after program may be wrong.
July 2020
Rev 1.5
56 / 73
Instructions Description
BY25Q128AS
7.4.9 Erase / Program Resume (7AH)
The Erase/Program Resume instruction “7Ah” must be written to resume the Sector or Block Erase
operation or the Page Program operation after an Erase/Program Suspend. The Resume
instruction “7AH” will be accepted by the device only if the SUS bit in the Status Register equals to
1 and the WIP bit equals to 0.
After the Resume instruction is issued the SUS bit will be cleared from 1 to 0 immediately, the WIP
bit will be set from 0 to 1 within 200 ns and the Sector or Block will complete the erase operation
or the page will complete the program operation. If the SUS bit equals to 0 or the WIP bit equals to
1, the Resume instruction “7Ah” will be ignored by the device. The Erase/Program Resume
instruction sequence is shown in Figure 42.
Figure 42. Erase/Program Resume Command Sequence
/CS
0
1
2
3
4
5
6
7
SCLK
Instruction
SI
7AH
High_Z
SO
July 2020
Rev 1.5
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Electrical Characteristics
BY25Q128AS
8. Electrical Characteristics
8.1 Absolute Maximum Ratings
PARAMETERS
Supply Voltage
SYMBOL
VCC
CONDITIONS
RANGE
UNIT
V
–0.5 to 4
–0.5 to 4
Voltage Applied to Any Pin
VIO
Relative to Ground
V
<20nS Transient
Relative to Ground
Transient Voltage on any Pin
VIOT
–2.0V to VCC+2.0V
V
Storage Temperature
TSTG
VESD
–65 to +150
°C
V
Electrostatic Discharge Voltage
Human Body Model(1)
–2000 to +2000
Notes:
1.JEDEC Std JESD22-A114 (C1=100pF, R1=1500 ohms, R2=500 ohms)
8.2 Operating Ranges
SPEC
PARAMETER
SYMBOL
CONDITIONS
UNIT
MIN
MAX
2.7
3.6
V
Supply Voltage
VCC
Commercial
Industrial
0
+70
+85
Temperature
Operating
TA
–40
-40
°C
Industrial
+105
July 2020
Rev 1.5
58 / 73
Electrical Characteristics
BY25Q128AS
8.3 Latch Up Characteristics
Parameter
Min
-1.0V
-100mA
Max
VCC+1.0V
100mA
Input Voltage Respect To VSS On I/O Pins
VCC Current
8.4 Power-up Timing
Symbol
Parameter
Min Max Unit
300
tVSL
VCC(min) To /CS Low
us
Figure 44. Power-up Timing and Voltage Levels
Vcc(max)
Chip selection is not allowed
Vcc(min)
tVSL
Device is fully
accessible
Time
July 2020
Rev 1.5
59 / 73
Electrical Characteristics
BY25Q128AS
8.5 DC Electrical Characteristics
(T= -40℃~85℃, VCC=2.7~3.6V)
Symbol
Parameter
Test Condition
Min.
Typ
Max.
Unit.
Input Leakage
Current
ILI
±2
µA
Output
±2
ILO
Leakage
Current
µA
Standby
Current
/CS=VCC,
VIN=VCC or VSS
ICC1
ICC2
13
2
25
5
µA
µA
Deep Power-
Down Current
/CS=VCC,
VIN=VCC or VSS
SCLK=0.1VCC/
0.9VCC, at
120MHz,Q=Open(*1,*,2*4
I/O)
SCLK=0.1VCC/
0.9VCC, at
80MHz,Q=Open(*1,*,2*4
I/O)
15
13
20
18
mA
mA
Operating
Current: (Read)
ICC3
Operating
Current(Page
Program)
Operating
Current(WRSR)
Operating
Current(Sector
Erase)
15
5
ICC4
ICC5
ICC6
/CS=VCC
/CS=VCC
/CS=VCC
mA
mA
mA
20
Operating
Current(Block
Erase)
Operating
Current (Chip
Erase)
ICC7
ICC8
/CS=VCC
/CS=VCC
20
20
mA
mA
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
Output High
Voltage
VIL
VIH
-0.5
0.8VCC
0.2VCC
VCC+0.4
0.4
V
V
V
V
VOL
VOH
IOL =100µA
IOH =-100µA
VCC-0.2
July 2020
Rev 1.5
60 / 73
Electrical Characteristics
BY25Q128AS
(T= -40℃~105℃, VCC=2.7~3.6V)
Symbo
Parameter
Test Condition
Min.
Typ
Max.
Unit.
l
Input Leakage
Current
±2
ILI
µA
Output
ILO
Leakage
Current
±2
µA
Standby
Current
/CS=VCC,
VIN=VCC or VSS
23
10
35
18
ICC1
ICC2
µA
µA
Deep Power-
Down Current
/CS=VCC,
VIN=VCC or VSS
SCLK=0.1VCC/
0.9VCC, at
120MHz,Q=Open(*1,*,2
*4 I/O)
SCLK=0.1VCC/
0.9VCC, at
80MHz,Q=Open(*1,*,2*
4 I/O)
22
16
40
30
mA
mA
Operating
Current:
(Read)
ICC3
Operating
Current(Page
Program)
Operating
Current(WRSR
)
Operating
Current(Sector
Erase)
Operating
Current(Block
Erase)
Operating
Current (Chip
Erase)
ICC4
ICC5
ICC6
ICC7
ICC8
/CS=VCC
/CS=VCC
/CS=VCC
/CS=VCC
/CS=VCC
15
9
mA
mA
mA
mA
mA
25
25
25
Input Low
Voltage
Input High
Voltage
Output Low
Voltage
Output High
Voltage
VIL
VIH
-0.5
0.8VCC
0.2VCC
VCC+0.4
0.4
V
V
V
V
VOL
VOH
IOL =100µA
IOH =-100µA
VCC-0.2
July 2020
Rev 1.5
61 / 73
Electrical Characteristics
BY25Q128AS
8.6 AC Measurement Conditions
Symbol
CL
Parameter
Min
Tpy
Max
30
5
Unit
pF
Conditions
Load Capacitance
Input Rise And Fall time
TR, TF
ns
VIN
IN
Input Pause Voltage
0.2VCC to 0.8VCC
0.5VCC
V
V
V
Input Timing Reference
Voltage
Output Timing Reference
Voltage
OUT
0.5VCC
Figure 45. AC Measurement I/O Waveform
Input Timing
Output Timing
Reference Levels
Reference Levels
Input Levels
0.8VCC
0.5VCC
0.5VCC
0.2VCC
8.7 AC Electrical Characteristics
(T= -40℃~85℃, VCC=2.7~3.6V)
Symbol
Parameter
Min. Typ. Max. Unit.
Clock frequency for all instructions, except Read
Data(03H)
Fc
DC.
108
55
MHz
fR
Clock freq. for Read Data instruction (03H)
Serial Clock High Time
DC.
MHz
ns
tCLH
4
tCLL
Serial Clock Low Time
4
ns
tCLCH
tCHCL
tSLCH
tCHSH
tSHCH
tCHSL
tSHSL
tSHQZ
tCLQX
tDVCH
tCHDX
tHLCH
tHHCH
tCHHL
tCHHH
tHLQZ
Serial Clock Rise Time (Slew Rate)
Serial Clock Fall Time (Slew Rate)
/CS Active Setup Time
0.1(1)
0.1(1)
5
V/ns
V/ns
ns
/CS Active Hold Time
5
ns
/CS Not Active Setup Time
/CS Not Active Hold Time
5
ns
5
ns
/CS High Time（read/write）
Output Disable Time
20
ns
6
ns
Output Hold Time
0
2
2
5
5
5
5
ns
Data In Setup Time
ns
Data In Hold Time
ns
/Hold Low Setup Time (relative to Clock)
/Hold High Setup Time (relative to Clock)
/Hold High Hold Time (relative to Clock)
/Hold Low Hold Time (relative to Clock)
/Hold Low To High-Z Output
ns
ns
ns
ns
6
ns
July 2020
Rev 1.5
62 / 73
Electrical Characteristics
BY25Q128AS
tHHQX
/Hold Low To Low-Z Output
6
7
ns
ns
ns
ns
µs
tCLQV
tWHSL
tSHWL
tDP
Clock Low To Output Valid
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High To Deep Power-Down Mode
20
100
20
20
/CS High To Standby Mode Without Electronic
Signature Read
/CS High To Standby Mode With Electronic
Signature Read
tRES1
tRES2
µs
20
µs
µs
tSUS
/CS High To Next Instruction After Suspend
20
20
tRST_R
/CS High To Next InstructionAfter Reset(from read)
/CS High To Next Instruction After Reset(from
program)
/CS High To Next Instruction After Reset(from
erase)
tRST_P
tRST_E
20
12
tW
tBP1
tBP2
tPP
Write Status Register Cycle Time
Byte Program Time (First Byte) (3)
Additional Byte Program Time (After First Byte) (3)
Page Programming Time
5
30(2)
50
ms
µs
30
2.5
0.6
50
12
µs
2.4
300
ms
ms
tSE
Sector Erase Time
0.15/
0.25
tBE
tCE
Block Erase Time(32K Bytes/64K Bytes)
Chip Erase Time
1.6/2
120
S
S
60
Note:
1. Tested with clock frequency lower than 50 MHz.
2. For multiple bytes after first byte within a page, tBPn = tBP1 + tBP2 * N, where N is the
number of bytes programmed.
July 2020
Rev 1.5
63 / 73
Electrical Characteristics
BY25Q128AS
(T= -40℃~105℃, VCC=2.7~3.6V)
Symbol
Parameter
Min. Typ. Max.
Unit.
Clock frequency for all instructions, except Read
Data(03H)
Fc
DC.
108
55
MHz
fR
Clock freq. for Read Data instruction (03H)
Serial Clock High Time
DC.
MHz
ns
tCLH
4
tCLL
Serial Clock Low Time
4
ns
tCLCH
tCHCL
tSLCH
tCHSH
tSHCH
tCHSL
tSHSL
tSHQZ
tCLQX
tDVCH
tCHDX
tHLCH
tHHCH
tCHHL
tCHHH
tHLQZ
tHHQX
tCLQV
tWHSL
tSHWL
tDP
Serial Clock Rise Time (Slew Rate)
Serial Clock Fall Time (Slew Rate)
/CS Active Setup Time
0.1(1)
0.1(1)
5
V/ns
V/ns
ns
/CS Active Hold Time
5
ns
/CS Not Active Setup Time
/CS Not Active Hold Time
5
ns
5
ns
20
ns
/CS High Time（read/write）
Output Disable Time
6
ns
Output Hold Time
0
2
2
5
5
5
5
ns
Data In Setup Time
ns
Data In Hold Time
ns
/Hold Low Setup Time (relative to Clock)
/Hold High Setup Time (relative to Clock)
/Hold High Hold Time (relative to Clock)
/Hold Low Hold Time (relative to Clock)
/Hold Low To High-Z Output
/Hold Low To Low-Z Output
Clock Low To Output Valid
ns
ns
ns
ns
6
6
7
ns
ns
ns
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High To Deep Power-Down Mode
20
ns
100
ns
20
20
µs
/CS High To Standby Mode Without Electronic
Signature Read
tRES1
µs
/CS High To Standby Mode With Electronic
Signature Read
tRES2
tSUS
20
20
20
µs
µs
/CS High To Next Instruction After Suspend
/CS High To Next Instruction After Reset(from
read)
tRST_R
/CS High To Next Instruction After Reset(from
program)
/CS High To Next Instruction After Reset(from
erase)
tRST_P
tRST_E
20
12
tW
Write Status Register Cycle Time
Byte Program Time (First Byte) (3)
Additional Byte Program Time (After First Byte) (3)
Page Programming Time
5
30(2)
60
15
4
ms
µs
tBP1
tBP2
tPP
30
2.5
0.6
µs
ms
July 2020
Rev 1.5
64 / 73
Electrical Characteristics
BY25Q128AS
tSE
Sector Erase Time
50
400
1.6/3
120
ms
S
0.2/0.
3
tBE
tCE
Block Erase Time(32K Bytes/64K Bytes)
Chip Erase Time
60
S
Note:
1. Tested with clock frequency lower than 50 MHz.
2. For multiple bytes after first byte within a page, tBPn = tBP1 + tBP2 * N, where N is the
number of bytes programmed.
July 2020
Rev 1.5
65 / 73
Electrical Characteristics
BY25Q128AS
Figure 46. Serial inputTiming
tSHSL
/CS
tCHSL
tSHCH
tCHSH
tCLCH
tSLCH
SCLK
tCHCL
tDVCH
tCHDX
SI
MSB
LSB
High_Z
SO
Figure 47. Output Timing
/CS
tSHQZ
tCH
SCLK
tCL
tCLQV
tCLQX
tCLQV
tCLQX
tQLQH
tQHQL
LSB
SO
SI
Figure 48. Hold Timing
/CS
tHLCH
tCHHL
tHHCH
tHHQX
SCLK
tCHHH
tHLQZ
SO
/HOLD
Figure 49. /WP Timing
July 2020
Rev 1.5
66 / 73
PACKAGE INFORMATION
BY25Q128AS
9. Package Information
9.1 Package 8-Pin SOP 208-mil
8
5
θ
E
E1
L1
L
1
4
C
D
A2
A
b
A1
e
S
Dimensions
Symbol
Unit
A
A1
A2
b
C
D
E
E1
e
L
L1
S
è
Min
-
-
0.10
0.15
0.18
1.75
1.80
1.90
0.42
-
0.20
-
5.00
5.17
5.25
7.85
7.90
7.98
5.16
5.22
5.26
0.60
0.65
0.70
0.62
0.74
0.88
0
5
8
mm Nom
Max
1.27
1.31
1.95
0.48
0.24
July 2020
Rev 1.5
67 / 73
PACKAGE INFORMATION
BY25Q128AS
9.2 Package 8-Pad WSON (6x5mm)
Dimensions
Symbol
A
A1
b
b1
c
D
Nd
e
E
D2
E2
L
h
Unit
Min 0.70
0
0.35
0.18
4.90
5.90 3.90 3.30 0.55 0.30
6.00 4.00 3.40 0.60 0.35
6.10 4.10 3.50 0.65 0.40
Nom 0.75 0.02 0.40
Max 0.80 0.05 0.45
0.203 5.00
mm
0.25REF
3.81BSC 1.27BSC
0.25
5.10
July 2020
Rev 1.5
68 / 73
PACKAGE INFORMATION
BY25Q128AS
9.3 Package SOP16-300mil
Dimensions
Symbol
Unit
A
A1
A2
A3
b
b1
c
c1
D
E
E1
e
L
L1
θ
Min
mm Nom
-
-
0.10 2.25 0.97 0.35 0.34 0.25 0.24 10.20 10.10 7.40
2.30 1.02 0.37 0.25 10.30 10.30 7.50 1.27BSC
0.55
-
0°
-
-
-
-
1.40REF
Max 2.65 0.30 2.35 1.07 0.43 0.40 0.29 0.26 10.40 10.50 7.60
0.85
8°
July 2020
Rev 1.5
69 / 73
Order Information
BY25Q128AS
10. Order Information
BY 25Q 128 A S S I G
Green Code
P:Pb Free & Halogen Free Green Package
+ Power Meter Application
G:Pb Free & Halogen Free Green Package
Temperature Range
C:Commercial(0°C to +70°C)
I:Industrial(-40°C to +85°C)
J:Industrial(-40°C to +105°C)
Package Type
S:SOP8 208mil
W:WSON (6*5mm)
F:SOP16 300mil
Voltage
S:3V
L:1.8V
Generation
A:A Version
B:B Version
Density
128:128Mbit
32:32Mbit
Product Family
25Q:SPI Interface Flash
July 2020
Rev 1.5
70 / 73
Order Information
BY25Q128AS
10.1 Valid part Numbers and Top Side Marking
The following table provides the valid part numbers for BY25Q128AS SPI Flash Memory. Pls
contact BoyaMicro for specific availability by density and package type.
(T= -40℃~85℃, VCC=2.7~3.6V)
Package Type
Density
Product Number
BY25Q128ASSIG
Top Side Marking
S
128M-bit
SOP8 208mil
W
128M-bit
128M-bit
BY25Q128ASWIG
BY25Q128ASFIG
WSON8 6*5mm
F
SOP16 300mil
For Power Meter application:
Package Type
Density
Product Number
BY25Q128ASSIP
Top Side Marking
BoyaMicro
25Q128ASSIP
YYWW
S
128M-bit
SOP8 208mil
(T= -40℃~105℃, VCC=2.7~3.6V)
Package Type
Density
Product Number
Top Side Marking
S
128M-bit
BY25Q128ASSJG
SOP8 208mil
July 2020
Rev 1.5
71 / 73
Order Information
BY25Q128AS
10.2 Minimum Packing Quantity (MPQ)
Package
Type
Packing
Type
Qty for 1
Tube or Reel
Vacuum bag/
Inner Box
100Tubes/Bag
1Bag/InnerBox
MPQ
9,500
Tube
95ea/Tube
SOP8
208mil
Tape&Reel
(13inch,
16mm)
1Reel/Bag
2Bags/InnerBox
2000ea/Reel
4,000
3,000
WSON8 Tape&Reel
6*5mm
1Reel/Bag
1Bag/InnerBox
3000ea/Reel
44ea/Tube
(13inch)
SOP16
300mil
80Tubes/Bag
1Bag/InnerBox
Tube
3,520
July 2020
Rev 1.5
72 / 73
Document Change History
BY25Q128AS
11. Document Change History
Tech
Dev.
Rev.
Doc.
Rev.
Effective
Date
Change Description
1.0
1.1
1.2
1.3
1.4
1.5
2017-8-7
Initiate
2019-3-11
2019-4-27
2020-6-3
Add 105℃ Electrical Characteristics
1,Update WSON 5*6 POD
2,Add MPQ Information
Update read/program/erase allowed region under suspend
status.
2020-7-2 Update speed description on section 1
2020-7-21 Modify data Retention and Endurance
July 2020
Rev 1.5
73 / 73
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