ML12149-5P [LANSDALE]
Low Power Voltage Controlled Oscillator Buffer; 低功耗压控振荡器缓冲器
| 型号： | ML12149-5P |
| 厂家： | 
LANSDALE SEMICONDUCTOR INC. |
| 描述： | Low Power Voltage Controlled Oscillator Buffer |
| 文件： | 总12页 (文件大小：447K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ML12149
Low Power Voltage
Controlled Oscillator Buffer
Legacy Device: Motorola MC12149
The ML12149 is intended for applications requiring high fre-
quency signal generation up to 1300 MHz. An external tank circuit
is used to determine the desired frequency of operation. The VCO
is realized using an emmiter–coupled pair topology. The ML12149
can be used with an emitter PLL IC such as the Motorola
ML12210 1.1 GHz Frequency Synthesizer to realize a complete
PLL sub–system. The device is specified to operate over a voltage
supply range of 2.7 to 5.5 V. It has a typical current consumption
of 15 mA at 3.0 V which makes it attractive for battery operated
handheld systems.
SO 8 = -5P
PLASTIC PACKAGE
8
CASE 751
(SO–8)
1
NOTE: The ML12149 is NOT suitable as a crystal oscillator
CROSS REFERENCE/ORDERING INFORMATION
PACKAGE
SO 8
MOTOROLA
MC12149D
LANSDALE
ML12149-5P
• Operated Up to 1.3 GHz
• Space–Efficient 8–Pin SOIC Package
• Low Power 15 mA Typical @ 3.0 V Operation
• Supply Voltage of 2.7 to 5.5 V
Note: Lansdale lead free (Pb) product, as it
becomes available, will be identified by a part
number prefix change from ML to MLE.
• Typical 900 MHz Performance
–Phase Noise – 105 dBc/Hz @ 100 Khz Offset
–Tuning Voltage Sensitivity of 20 MHz/V
• Output Amplitude Adjustment Capability
• Two High Drive Output with an Adjustable Range from
–8.0 to –2.0 dBm
• One Low–Drive Output for Interfacing to a Prescaler
PIN CONNECTIONS
• Operating Temperature Range T = –40 to 85°C
A
Q
8
Q
7
GND
6
QB
5
2
The device has three high frequency outputs which make it
attractive for transceiver applications which require both a transmit
and receive local oscillator (LO) signal as well as a lower ampli-
tude signal to drive the prescaler input of the frequency synthesiz-
er. The outputs Q and QB are available for servicing the receiver
IF and transmitter up–converter single–ended. In receiver applica-
tions, the outputs can be used together if it is necessary to generate
a differential signal for the receiver IF. Because the Q and QB out-
1
2
3
4
puts are open collector, terminations to the V
supply are
CC
V
CNTL TANK
V
REF
CC
required for proper operation. Since the outputs are complementa-
ry, both outputs must be terminated even if only one is needed.
The Q and QB outputs have a nominal drive level of –8dBm to
conserve power. A level adjustment pin (CNTL) is available, which
when tied to ground, boosts the nominal output levels to –2.0
dBm. A low power VCO output (Q2) is also provided to drive the
prescaler input of the PLL. The amplitude of this signal is nomi-
nally 500 mV which is suitable for most prescalers.
(Top View)
External components required for the ML12149 are: (1) tank cir-
cuit (LC network); (2) Inductor/capacitor to provide the termina-
tion for the open collector outputs; and (3) adequate supply voltage
bypassing. The tank circuit consists of a high–Q inductor and var-
actor components. The preferred tank configuration allows the user
to tune the VCO across the full supply range. VCO performance
such as center frequency, tuning voltage sensitivity, and noise char-
acteristics are dependent on the particular components and config-
uration of the VCO tank circuit.
Page 1 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
PIN NAMES
Pin
Function
V
CNTL
TANK
Power Supply
Amplitude Control for Q, QB Output Pair
Tank Circuit Input
CC
V
Bias Voltage Output
Open Collector Output
Ground
Open Collector Output
Low Power Output
REF
QB
GND
Q
Q
2
MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
–0.5 to 7.0
–40 to 85
–65 to 150
7.5
Unit
V
Power Supply Voltage, Pin 1
Operating Temperature Range
Storage Temperature Range
Maximum Output Current, Pin 8
Maximum Output Current, Pin 5,7
V
CC
T
A
C
T
STG
C
I
O
I
O
mA
mA
12
NOTES: 1. Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
ELECTRICAL CHARACTERISTICS (V
= 2.7 to 5.5 VDC, T = –40 to 85 C, unless otherwise noted.)
A
CC
Characteristic
Symbol
Min
Ty p
Max
Unit
Supply Current (CNTL=GND)V
CC
= 3.3 V
I
–
–
16
23.5
20
30
mA
CC
CC
OH
V
= 5.5 V
CC
Supply Current (CNTL=OPEN)V
= 3.3 V
I
–
–
10
15
15.0
24.5
mA
V
CC
= 5.5 V
V
CC
Output Amplitude (Pin 8)V
High Impedance LoadV
= 2.7 V
V
V
V
V
,
1.75
1.20
1.85
1.35
1.95
1.50
CC
= 2.7 V
V
CC
OL
Output Amplitude (Pin 8)V
High Impedance LoadV
= 5.5 V
,
OH
OL
4.50
3.85
4.6
4.0
4.70
4.15
V
CC
= 5.5 V
V
CC
Output Amplitude (Pin 5 & 7) [Note 1] V
= 2.7 V
= 5.5 V
,
OH
OL
2.6
2.1
2.7
2.3
–
2.4
V
CC
CC
50 Ω to V
V
CC
= 2.7 V
V
CC
Output Amplitude (Pin 5 & 7) [Note 1] V
,
5.4
4.8
5.5
5.0
–
5.1
V
OH
OL
50Ω to V = 5.5V
V
CC
V
CC
Tuning Voltage Sensitivity [Notes 2 and 3]
Frequency of Operation
T
–
100
–
20
–
–
1300
–
MHz/V
MHz
stg
F
C
CSR at 10 kHz Offset, 1Hz BW [Notes 2 and 3]
CSR at 100 kHz Offset, 1Hz BW [Notes 2 and 3]
(f)
–85
–105
dBc/Hz
dBc/Hz
(f)
–
–
Frequency Stability [Notes 3 and 4]
Supply Drift
F
f
–
–
0.8
50
–
–
MHz/V
KHz/ C
sts
stt
Thermal Drift
NOTES: 1. CNTL pin tied to ground.
2. Actual performance depends on tank components selected.
3. See Figure 12, 750 MHz tank.
4. T = 25 C, V
= 5.0 V 10%
CC
Page 2 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
OPERATIONAL CHARACTERISTICS
A simplified schematic of the ML12149 is found in Figure 1.
that additional regulation/ filtering can be incorporated into the
Vcc line without compromising the tuning range of the VCO.
The oscillator incorporates positive feedback by coupling the base With the AC–coupled tank configuration, the Vtune voltage can
of transistor Q2 to the collector of transistor Q1. In order to mini- be greater than the V
mize interaction between the VCO outputs and the oscillator tank
voltage supplied to the device. There are
CC
four main areas that the user directly influences the performance
transistor pair, a buffer is incorporated into the circuit. This differ- of the VCO. These include Tank Design, Output Termination
ential buffer is realized by the Q3 and Q4 transistor pair. The dif-
ferential buffer drives the gate which contains the primary open
collector outputs, Q and QB. The output is actually a current
which has been set by an internal bias driver to a nominal current
of 4mA. Additional circuitry is incorporated into the tail of the
current source which allows the current source to be increased to
approximately 10 mA. This is accommodated by the addition of a
resistor which is brought out to the CNTL pin. When this pin is
tied to ground, the additional current is sourced through the cur-
rent source thus increasing the output amplitude of the Q/QB out-
put pair. If less than 10mA of current is needed, a resistor can be
added to ground which reduces the amount of current.
The Q/QB outputs drive an additional differential buffer which
generate the Q2 output signal. To minimize current, the circuit is
realized as an emitter–follower buffer with an on chip pull down
resistor. This output is intended to drive the prescaler input of the
PLL synthesizer block.
Selection, Power Supply Decoupling, and Circuit Board
Layout/Grounding. The design of the tank circuit is critical to the
proper operation of the VCO. This tank circuit directly impacts
the main VCO operating characteristics:
1) Frequency of Operation
2) Tuning Sensitivity
3) Voltage Supply Pushing
4) Phase Noise Performance
The tank circuit, in its simplest form, is realized as an LC cir-
cuit which determines the VCO operating frequency. This is
described in Equation 1.
1
f
o
=
Equation 1
2
√
LC
APPLICATION INFORMATION
In the practical case, the capacitor is replaced with a varactor
diode whose capacitance changes with the voltage applied, thus
changing the resonant frequency at which the VCO tank operates.
The capacitive component in Equation 1 also needs to include the
input capacitance of the device and other circuit and parasitic ele-
ments. Typically, the inductor is realized as a surface mount chip
or a wound–coil. In addition, the lead inductance and board
inductance and capacitance also have an impact on the final oper-
ating point.
Figure 2 illustrates the external components necessary for the
proper operation of the VCO buffer. The tank circuit configura-
tion in this figure allows the VCO to be tuned across the full
operating voltage of the power supply. This is very important in
3.0 V applications where it is desirable to utilize as much of the
operating supply range as possible so as to minimize the VCO
sensitivity (MHz/V). In most situations, it is desirable to keep the
sensitivity low so the circuit will be less susceptible to external
noise influences. An additional benefit to this configuration is
Figure 1. Simplified Schematic
V
Q
QB
V
CC
CC
Q3
Q4
Q5
Q6
TANK
Q2
Q1 Q2
V
REF
V
REF
136Ω
1000Ω
CNTL
200Ω
GND
Page 3 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
Figure 2. ML12149 Typical External Component Connections
V
Supply
CC
C3a
C2a
V
Q2
C7
CC
To Prescaler
VCO Output
1
8
C3a
C2a
L2a
CNTL
Q
C6a
Note 1
2
7
TANK
GND
R1
C1
3
6
V
in
L2b
C6b
LT
VCO
V
QB
REF
4
CV
VCO Output
5
Cb
1. This input can be left open, tied to ground, or tied with a resistor to ground, depending
on the desired output amplitude needed at the Q and QB output pair.
2. Typical values for R1 range from 5.0 kΩ to 10 kΩ.
Legacy Applications Information
A simplified linear approximation of the device, package, and
typical board parasitics has been developed to aid the designer in
selecting the proper tank circuit values. All the parasitic contribu-
tions have been lumped into a parasitic capacitive component and a
Now the results calculated from Equation 2, Equation 3 and
Equation 4 can be substituted into Equation 1 to calculate the actu-
al frequency of the tank.
To aid in analysis, it is recommended that the designer use a sim-
parasitic inductive component. While this is not entirely accurate, it ple spreadsheet based on Equation 1 through Equation 4 to calcu-
gives the designer a solid starting point for selecting the tank com-
ponents. Below are the parameters used in the model.
late the frequency of operation for various varactor/inductor selec-
tions before determining the initial starting condition for the tank.
The two main components at the heart of the tank are the induc-
tor (LT) and the varactor diode (CV). The capacitance of a varactor
diode junction changes with the amount of reverse bias voltage
applied across the two terminals. This is the element which actually
“tunes” the VCO. One characteristic of the varactor is the tuning
ratio which is the ratio of the capacitance at specified minimum
and maximum voltage points. For characterizing the ML12149, a
Matsushita (Panasonic) varactor – MA393 was selected. This
device has a typical capacitance of 11 pF at 1.0 V and 3.7 pF at 4.0
V and the C–V characteristic is fairly linear over that range.
Similar performance was also acheived with Loral varactors. A
multi–layer chip inductor was used to realize the LT component.
These inductors had typical Q values in the 35 to 50 range for fre-
quencies between 500 and 1000 MHz.
Cp Parasitic Capacitance
Lp Parasitic Inductance
LT Inductance of Coil
C1 Coupling Capacitor Value
Cb Capacitor for decoupling the Bias Pin
CV Varactor Diode Capacitance (Variable)
The values for these components are substituted into the follow-
ing equations:
x
C1 CV
Ci =
C =
Cp
Equation 2
Equation 3
Equation 4
+
C1 CV
x
Ci Cb
Note: There are many suppliers of high performance varactors
and inductors and Motorola can not recommend one vendor over
another.
+
Ci Cb
L = Lp + LT
The Q (quality factor) of the components in the tank circuit has a
From Figure 2, it can be seen that the varactor capacitance (CV) is direct impact on the resulting phase noise of the oscillator. In gen-
in series with the coupling capacitor (C1). This is calculated in
eral, the higher the Q, the lower the phase noise of the resulting
Equation 2. For analysis purposes, the parasitic capacitances (CP) are oscillator. In addition to the LT and CV components, only high
treated as a lumped element and placed in parallel with the series
combination of C1 and CV. This compound capacitance (Ci) is in
quality surface–mount RF chip capacitors should be used in the
tank circuit. These capacitors should have very low dielectric loss
series with the bias capacitor (Cb) which is calculated in Equation 3. (high–Q). At a minimum, the capacitors selected should be operat-
The influences of the various capacitances; C1, CP, and Cb, impact
the design by reducing the variable capacitance effects of the varac-
tor which controls the tank resonant frequency and tuning range.
ing 100 MHz below their series resonance point. As the desired fre-
quency of operation increases, the values of the C1 and Cb capaci-
tors will decrease since the series resonance point is a function of
Page 4 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
Legacy Applications Information
the capacitance value. To simplify the selection of C1 and Cb, a
table has been constructed based on the intended operating fre-
quency to provide recommended starting points. These may need
to be altered depending on the value of the varactor selected.
9. Evaluate over temperature and voltage limits.
10. Perform worst case analysis of tank component
variation to insure proper VCO operation over full
temperature and voltage range and make any
adjustments as needed.
Frequency
200 – 500 MHz
500 – 900 MHz
900 – 1200 MHz
C1
Cb
47 pF
5.1 pF
2.7 pF
47 pF
15 pF
15 pF
Outputs Q and QB are open collector outputs and need a induc-
tor to V
to provide the voltage bias to the output transistor. In
most applications, DC–blocking capacitors are placed in series
with the output to remove the DC component before interfacing to
CC
The value of the Cb capacitor influences the VCO supply push- other circuitry. These outputs are complementary and should have
ing. To minimize pushing, the Cb capacitor should be kept small.
Since C1 is in series with the varactor, there is a strong relation-
ship between these two components which influences the VCO
sensitivity. Increasing the value of C1 tends to increase the sensi-
tivity of the VCO.
The parasitic contributions Lp and Cp are related to the
ML12149 as well as parasitics associated with the layout, tank
components, and board material selected. The input capacitance
of the device, bond pad, the wire bond, package/lead capacitance,
wire bond inductance, lead inductance, printed circuit board lay-
out, board dielectric, and proximity to the ground plane all have
an impact on these parasitics. For example, if the ground plane is
located directly below the tank components, a parasitic capacitor
will be formed consisting of the solder pad, metal traces, board
identical inductor values for each output. This will minimize
switching noise on the V supply caused by the outputs switch-
ing. It is important that both outputs be terminated, even if only
one of the outputs is used in the application.
CC
Referring to Figure 2, the recommended value for L2a and L2b
should be 47 nH and the inductor components resonance should
be at least 300 MHz greater than the maximum operating frequen-
cy. For operation above 1100MHz, it may be necessary to reduce
that inductor value to 33nH. The recommended value for the cou-
pling capacitors C6a, C6b, and C7 is 47 pF. Figure 2 also includes
decoupling capacitors for the supply line as well as decoupling for
the output inductors. Good RF decoupling practices should be
used with a series of capacitors starting with high quality 100pF
chip capacitors close to the device. A typical layout is shown
dielectric material, and the ground plane. The test fixture used for below in Figure 3.
characterizing the device consisted of a two sided copper clad
board with ground plane on the back. Nominal values where
determined by selecting a varactor and characterizing the device
with a number of different tank/frequency combinations and then
performing a curve fit with the data to determine values for Lp
and Cp. The nominal values for the parasitic effects are seen
below:
The output amplitude of the Q and QB can be adjusted using
the CNTL pin. Refering to Figure 1, if the CNTL pin is connected
to ground, additional current will flow through the current source.
When the pin is left open, the nominal current flowing through
the outputs is 4 mA. When the pin is grounded, the current
increases to a nominal value of 10 mA. So if a 50 ohm resistor
was connected between the outputs and V , the output ampli-
CC
tude would change from 200 mV pp to 500 mV pp with an addi-
tional current drain for the device of 6 mA. To select a value
between 4 and 10 mA, an external resistor can be added to
ground. The equation below is used to calculate the current.
Parasitic Capacitance
Parasitic Inductance
Cp
Lp
4.2 pF
2.2 nH
These values will vary based on the users unique circuit board
configuration.
(200 + 136 + R ) x 0.8V
ext
I (nom) =
out
x
+
R
200 (136
)
ext
Basic Guidelines:
1. Select a varactor with high Q and a reasonable
capacitance versus voltage slope for the desired
frequency range.
Figure 4 through Figure 13 illustrate typical performance
achieved with the ML12149. The curves illustrate the tuning
curve, supply pushing characteristics, output power, current drain,
output spectrum, and phase noise performance. In most cases, data
2. Select the value of Cb and C1 from the table above.
3. Calculate a value of inductance (L) which will result in is present for both a 750 MHz and1200 MHz tank design. The
achieving the desired center frequency. Note that L
includes both LT and Lp.
4. Adjust the value of C1 to achieve the proper
VCO sensitivity.
5. Re–adjust value of L to center VCO.
6. Prototype VCO design using selected components. It is
important to use similar construction techniques and
materials, board thickness, layout, ground plane
spacing as intended for the final product.
7. Characterize tuning curve over the voltage
operation conditions.
table below illustrates the component values used in the designs.
Component
750MHz Tank
1200MHz Tank
Units
Ω
R1
C1
LT
5000
5.1
5000
2.7
pF
4.7
1.8
nH
pF
CV
3.7 @ 1.0 V
11 @ 4.0 V
3.7 @ 1.0 V
11 @ 4.0 V
Cb
C6, C7
L2
100*
47
15
33
47
pF
pF
nH
8. Adjust, as necessary, component values – L, C1, and
Cb to compensate for parasitic board effects.
47
NOTE: * The value of Cb should be reduced to minimize pushing.
Page 5 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
Figure 3. ML12149 Typical Layout
(Not to Scale)
To Prescaler
C3a
C7
C2a
C6a
VCO Output 1
1
R2
L2a
L2b
C3b
C2b
R1
C1
V
tune
LT
Varactor
Cb
VCO Output 2
C6b
= Via to/or Ground Plane
= Via to/or Power Plane
Page 6 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 4. Typical VCO Tuning Curve, 750 MHz Tank
850
825
800
775
750
725
700
675
650
–40°C
+25°C
+85°C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Tuning Voltage (V)
Figure 5. Typical Supply Pushing, 750 MHz Tank
750
748
746
744
742
740
738
736
734
732
730
–40°C
+25°C
+85°C
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
V
Supply Voltage (V)
CC
Page 7 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc
Legacy Applications Information
Figure 6. Typical Q/QB Output Power versus Supply, 750 MHz Tank
0
–1
–2
–3
–4
–5
–6
–7
–8
–9
–40°C
+25°C
+85°C
+25°C (LP)
CNTL to GND
CNTL–N/C
3.3
–10
2.7
3.0
3.6
3.9
4.2
4.5
4.8
5.0
V
Supply Voltage (V)
CC
Figure 7. Typical Current Drain versus Supply, 750 MHz Tank
25
20
15
10
CNTL to GND
–40°C
+25°C
+85°C
+25°C (LP)
CNTL–N/C
5
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
V
Supply Voltage (V)
CC
Page 8 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 8. Typical VCO Tuning Curve, 1200 MHz Tank
(V
CC
= 5.0 V)
1300
1275
1250
1225
1200
1175
–40°C
+25°C
+85°C
1150
0
0.6
1.2
1.8
2.4
Tuning Voltage (V)
3.0
3.6
4.2
4.8
Figure 9. Typical Supply Pushing, 1200 MHz Tank
1210
1208
1206
1204
1202
1200
1198
1196
1194
1192
–40°C
+25°C
+85°C
1190
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.1
5.4
V
Supply Voltage (V)
CC
Page 9 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc
Legacy Applications Information
Figure 10. Q/QB Output Power versus Supply, 1200 MHz Tank
2
1
0
–1
–2
–3
–40°C
+25°C
+85°C
–4
2.7
3.0
3.3
3.6
3.9
4.2
4.5
4.8
5.0
V
Supply Voltage (V)
CC
Figure 11. Typical VCO Output Spectrum
ATTEN 10
RL 0dBm
MARKER
909MHz –7.1dBm
10dB/
0
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
START 10MHz
RBW 1.0MHz
STOP 10.0GHz
SWP 200ms
VBW 1.0MHz
Page 10 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc.
Legacy Applications Information
Figure 12. Typical Phase Noise Plot, 750 MHz Tank
HP 3048A
0
CARRIER
784.2MHz
–25
–50
–75
–100
–125
–150
–170
100
1K
10K
100K
1M
10M
40M
(f) [dBc/Hz] vs f[Hz]
Figure 13. Typical Phase Noise Plot, 1200 MHz Tank
HP 3048A
0
CARRIER
1220MHz
–25
–50
–75
–100
–125
–150
–170
100
1K
10K
100K
1M
10M
40M
(f) [dBc/Hz] vs f[Hz]
Page 11 of 12
www.lansdale.com
Issue B
ML12149
LANSDALE Semiconductor, Inc
OUTLINE DIMENSIONS
SO 8 = -5P
(ML12149-5P)
PLASTIC PACKAGE
CASE 751–06
(SO–8)
ISSUE T
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
D
A
C
Y14.5M, 1994.
2. DIMENSIONS ARE IN MILLIMETER.
3. DIMENSION D AND E DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
5. DIMENSION B DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE B DIMENSION AT MAXIMUM MATERIAL
CONDITION.
8
1
5
4
M
M
0.25
B
H
E
h X 45°
MILLIMETERS
θ
B
e
DIM
A
A1
B
C
D
E
e
H
h
MIN
1.35
0.10
0.35
0.19
4.80
3.80
MAX
1.75
0.25
0.49
0.25
5.00
4.00
A
C
SEATING
PLANE
L
1.27 BSC
0.10
5.80
0.25
0.40
0
6.20
0.50
1.25
A1
B
L
M
S
S
0.25
C
B
A
Lansdale Semiconductor reserves the right to make changes without further notice to any products herein to improve reliabili-
ty, function or design. Lansdale does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights nor the rights of others. “Typical” parameters which
may be provided in Lansdale data sheets and/or specifications can vary in different applications, and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by the customer’s
technical experts. Lansdale Semiconductor is a registered trademark of Lansdale Semiconductor, Inc.
Page 12 of 12
www.lansdale.com
Issue B
相关型号：
ML1225-AA-T92-B
Silicon Controlled Rectifier, 0.8A I(T)RMS, 300V V(DRM), 1 Element, TO-92, TO-92, 3 PIN
UTC
ML1225-AA-T92-K
Silicon Controlled Rectifier, 0.8A I(T)RMS, 300V V(DRM), 1 Element, TO-92, TO-92, 3 PIN
UTC
©2020 ICPDF网 联系我们和版权申明