KLM-821G [KODENSHI]
Light Emitting Diode(GaN); 发光二极管（ GaN）的
| 型号： | KLM-821G |
| 厂家： | 
KODENSHI KOREA CORP. |
| 描述： | Light Emitting Diode(GaN) |
| 文件： | 总2页 (文件大小：165K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Light Emitting Diode(GaN)
KLM-821G
参考 Reference
KLM-821G has a 1W High power GaN green LED
and has the optimized optical characteristics.
DIMENSIONS
Features
• Low forward voltage operated
• More Energy Efficient than incandescent and
most halogen lampes
Applications
• Portable flashlight
• Bollards,Security,Garden lighting
• LCD Back light
• General lighting
[ Ta=25°C ]
Unit
V
Maximum Ratings
Parameter
Reverse Voltage
Symbol
VR
Ratings
5
IF
Forward current
Pulse forward current *1
350
mA
mA
mW
°C
IFP
1000
PD
Power dissipation
1000
Topr.
Tstg.
Tsol.
Operating temperature
Storage temperature
Soldering Temperature *2
-30 ~ + 110
-40 ~ +120
260
°C
°C
*1. IFP Measured under duty £ 1/10 @ 1KHz
*2. Soldering time £ 5 Sec
[ Ta=25°C ]
Electro-Optical Characteristics
Parameter
Symbol
VF
Conditions
Min
Typ
2.5
60
-
Max
Unit
V
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
Forward voltage
Flux
-
-
Im
-
-
lm
λd
Doninant Wave Length
Spectral half bandwidth
Half angle
520
530
nm
nm
deg.
∆λ
-
-
20
90
-
-
∆Θ
1/2
Light Emitting Diode(GaN)
KLM-821G
Forward current vs.
Ambient temperature
Radiant Intensity vs.
Forward current
(IF)
500
1.5
1
400
300
200
100
Rth(J-A)=60℃/
Rth(J-A)=50℃/
Rth(J-A)=40℃/
W
W
W
0.5
0
Rth(J-A)=30℃/
W
(IF)
(℃)
100 125
0
0
100 200 300 350 400 450 500
0
25
50
75
Ambient temperature Ta
Forward current IF
Relative intensity vs.
Wavelength
Relative radiant intensity vs.
Ambient temperature
1.2
1
10
0.8
0.6
0.4
0.2
0
1
0.1
(℃)
20 40 60 80 100
-20
0
400
450
500
550
600
650
Ambient temperature Ta
Wave Length[nm]
Forward current vs.
Forward voltage
Radiant Pattern
Angle(deg)
0
450
400
350
300
250
200
100
50
50
0
0
1.0 1.5 2.0 2.5 3.0 3.5
0.5
0
Forward voltage VF
Relative intensity(%)
2/2
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