2A01 [KISEMICONDUCTOR]
PLASTIC SILICON RECTIFIER; 塑料硅整流
| 型号： | 2A01 |
| 厂家： | 
Kwang Myoung I.S. CO.,LTD |
| 描述： | PLASTIC SILICON RECTIFIER |
| 文件： | 总2页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SEMICONDUCTOR
2A01 - - - 2A07
KI
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 2.0 A
PLASTIC SILICON RECTIFIER
FEATURES
Low cost
DO-15
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easilycleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method208
Polarity: Color band denotes cathode end
Mounting position: Any
Weight: 0.014 ounces,0.39 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.
2A
01
2A
02
2A
03
2A
04
2A
05
2A
06
2A
07
UNITS
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
Maximum DC blocking voltage
100
1000
Maximum average forw ard rectified current
9.5mmlead length, @TA=75
A
2.0
IF(AV)
Peak forw ard surge current
IFSM
A
8.3ms single half-sine-w ave
70.0
1.1
superimpoded on ratde load @TJ=125
Maximum instantaneous forw ard voltage
@ 2.0 A
V
VF
5.0
Maximum reverse current
@TA=25
IR
µ A
50.0
at rated DC blocking voltage @TA=100
pF
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
20
CJ
40
R
/W
JA
Operaring junction temperature range
Storage temperature range
- 55 ---- + 150
- 55 ---- + 150
TJ
TSTG
NOTE: 1. Measured at 1.0MHz and applied reverse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
Document Number 0260006
KISEMICONDUCTOR
1.
RATINGS AND CHARACTERISTIC CURVES
2A01---2A07
FIG.1 -- FORWARD DERATING CURVE
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
2.5
2.0
T
J
=25
Pulse Width=300us
4
2
1.0
1.5
Single Phase
Half Wave 60H
Resistive or
Inductive Load
0.4
0.2
0.1
Z
1.0
0.5
0.06
0.04
0
0
25
50
75
100
125 150
175
0.02
0.01
0.6
0.8 1.0 1.2 1.4 1.6
AMBIENTTEMPERATURE,
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.3 -- PEAK FORWARD SURGE CURRENT
FIG.4 --TYPICAL JUNCTION CAPACITANCE
100
80
70
60
60
f=1MHz
TJ=25
40
℃
TJ=125
20
10
8.3ms Single Half
Sine-Wave
50
40
30
20
4
2
1
10
0
.1 .2
.4
1.0
2
4
10 20 40
100
1
2
4
8 10
20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
REVERSE VOLTAGE,VOLTS
2.
Document Number 0260006
KISEMICONDUCTOR
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