MMBTA43 [KEXIN]
High Voltage Transistors; 高电压晶体管
| 型号： | MMBTA43 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | High Voltage Transistors |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
High Voltage Transistors
MMBTA43
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
NPN Silicon
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-emitter voltage
Symbol
VCEO
VCBO
VEBO
IC
Rating
200
200
6
Unit
V
Collector-base voltage
V
Emitter-base voltage
V
Collector current-continuous
Total device dissipation FR-5 board *1
500
mA
PD
RèJA
PD
225
1.8
@TA = 25
Derate above 25
Thermal resistance, junction-to-ambient
Total device dissipation alumina substrate *2
@TA = 25
derate above 25
Thermal resistance, junction-to-ambient
mW
mW/
/W
556
300
2.4
mW
mW/
/W
RèJA
417
Junction and storage temperature
TJ, Tstg
-55 to +150
* 1. FR-5 = 1.0 X 0.75 X 0.062 in.
* 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina.
1
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SMD Type
Transistors
MMBTA43
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
200
200
6
Typ
Max
Unit
V
Collector-emitter breakdown voltage *
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V(BR)CEO IC = 1.0 mA, IB = 0
V(BR)CBO IC = 100 ìA, IE = 0
V(BR)EBO IE = 100 ìA, IC = 0
V
V
ICBO
IEBO
VCB = 160 V, IE = 0
0.1
0.1
ìA
ìA
Emitter cutoff current
VEB = 4.0 V, IC = 0
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
40
DC current gain *
hFE
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain - bandwidth product
Collector-base capacitance
VCE(sat) IC = 20 mA, IB = 2.0 mA
VBE(sat) IC = 20 mA, IB = 2.0 mA
0.5
0.9
V
V
fT
IC = 10 mA, VCE = 20 V, f = 100 MHz
VCB = 20 V, IE = 0, f = 1.0 MHz
50
MHz
pF
Ccb
4
* Pulse Test: Pulse Width
300 ìs, Duty Cycle 2.0%.
Marking
Marking
M1E
2
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