KST8550S-3_15 [KEXIN]
PNP Transistors;
| 型号： | KST8550S-3_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总2页 (文件大小：1053K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
SMD Type
Transistors
PNP Transistors
KST8550S
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Collector current: IC-=0.5A
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
-25
V
-5
V
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
-0.5
A
PC
0.3
W
Tj
150
Storage Temperature
Tstg
-55 to 150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditions
IC=-100 A, IE=0
Min
-40
-25
-5
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
IC=-1mA, IB=0
V
V
IE=-100 A, IC=0
VCB=-40V, IE=0
VCE=-20V, IB=0
VEB=-3V, IC=0
-0.1
-1
A
Collector cut-off current
A
Emitter cut-off current
-0.1
400
A
VCE=-1V, IC=-50mA
VCE=-1V, IC=-500mA
120
50
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
VCE(sat) IC=-500mA, IB=-50mA
VBE(sat) IC=-500mA, IB=-50mA
-0.5
-1.2
V
V
fT
VCE= -6V, IC= -20mA,f=30MHz
150
MHz
■ Classification of hfe(1)
Type
Range
Marking
KST8550S
200-350
KST8550S-L
120-200
KST8550S-H
144-202
KST8550S-J
300-400
2TY
1
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SMD Type
SMD Type
Transistors
KST8550S
Typical Characteristics
VCE
IC ——
IC
hFE ——
-90
-80
-70
-60
500
-400uA
COMMON
EMITTER
Ta=25℃
Ta =100℃
-360uA
-320uA
-280uA
a
T =25℃
-240uA
-200uA
-160uA
100
-50
-40
-30
-120uA
-80uA
-20
-10
-0
IB=-40uA
COMMON EMITTER
VCE=-1V
10
-0
-2
-4
-6
-8
-10
-12
-1
-10
-100
-500
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
IC
VBEsat ——
VCEsat ——
IC
-1200
-500
-800
-100
β=10
-500
β=10
-500
-10
-400
-500
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
fT ——
IC
IC —— VBE
400
-100
100
-10
COMMON EMITTER
VCE=-6V
COMMON EMITTER
CE=-1V
V
Ta=25℃
10
-1
-1
-10
-100
-0
-300
-600
-900
-1200
COLLECTOR CURRENT IC (mA)
BASE-EMMITER VOLTAGE VBE (mV)
Cob/Cib —— VCB/VEB
PC —— Ta
400
300
200
100
0
50
Cib
Cob
10
f=1MHz
IE=0/IC=0
Ta=25 ℃
1
-0.1
0
25
50
75
100
125
150
-1
-10
-20
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE Ta (℃)
2
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