HR1A3M [KEXIN]
Digital Transistors; 数字晶体管
| 型号： | HR1A3M |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Digital Transistors |
| 文件： | 总3页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Digital Transistors
HR1A3M
Features
Up to 2A High Current Drives Such As IC Outputs and
Actuators Available
On-chip Bias Resistor
Low Power Consumption During Drive
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Symbol
VCBO
VCEO
Rating
-60
Unit
V
-60
V
VEBO
-10
V
Collector Current (DC)
IC(DC)
-1.0
A
Collector Current (Pulse)
Base Current (DC)
IC(pulse) *1
IB(DC)
PT *2
Tj
-2.0
A
-0.02
2.0
A
Total Power Dissipation
Junction temperature
Storage temperature
W
150
Tstg
-55 to +150
*1 PW 10ms, Duty Cycle 50%
*2 When 0.7mm x 16cm2 ceramic board is used.
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
Min
Typ
Max
-100
Unit
nA
Collector Cut-off Current
VCB = -60V, IE = 0
VCE = -2.0V , IC = -0.1A
VCE = -2.0V , IC = -0.5A
VCE = -2.0V , IC = -1.0A
50
100
50
DC Current Gain
hFE *
Low Level Output Voltage
Low Level Input Voltage
Input Resistance
VOL * VIN = -5.0V, IC = -0.4A
-0.4
-0.3
1.3
V
V
k
VIL *
R1
VCE = -5.0V, IC = -100
A
0.7
0.7
1.0
1.0
Emitter-Base Resistance
* PW 350 s, Duty Cycle 2%
R2
1.3
k
1
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SMD Type
Transistors
HR1A3M
Marking
Marking
MP
Equivalent Circuit
Electrical Characteristics Curves
2
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SMD Type
Transistors
HR1A3M
3
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相关型号：
HR1A3M-T1
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, POWER, PLASTIC, SC-62, 3 PIN
NEC
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