FZT790A [KEXIN]
PNP Silicon Planar Medium Power High Gain Transistor; PNP硅平面中功率高增益晶体管
| 型号： | FZT790A |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Silicon Planar Medium Power High Gain Transistor |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Silicon Planar Medium
Power High Gain Transistor
FZT790A
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
-0.2
6.50
Features
Low equivalent on-resistance; RCE(sat) 125mÙ at 2A.
Gain of 200 at IC=1 Amps and Very low saturation voltage.
+0.2
0.90
-0.2
+0.1
-0.1
3.00
+0.3
7.00
-0.3
4
1 base
1
2
3
+0.1
0.70
-0.1
2.9
2 collector
3 emitter
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
Rating
-50
-40
-5
Unit
V
VCBO
VCEO
VEBO
ICM
Collector-emitter voltage
Emitter-base voltage
V
V
Continuous collector current
-6
A
Peak pulse current
IC
-3
2
A
Power dissipation
Ptot
W
Operating and storage temperature range
Tj,Tstg
-55 to +150
1
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SMD Type
Transistors
FZT790A
Electrical Characteristics Ta = 25
Parameter
Breakdown Voltages
Breakdown Voltages
Breakdown Voltages
Symbol
Testconditons
Min
-50
-40
-5
Typ
-70
-60
-8.5
Max
Unit
V
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
V
V
VCB=-30V
ICBO
-0.1
-10
Collector Cut-Off Current
Emitter Cut-Off Current
ìA
ìA
VCB=-30V,Ta = 100
IEBO
VEB=-4V
-0.1
IC=-500mA, IB=-5mA
-0.15 -0.25
-0.30 -0.45
-0.40 -0.75
Collector-Emitter Saturation Voltage *
VCE(sat) IC=-1A, IB=-10mA
IC=-2A, IB=-50mA
V
Base-Emitter Saturation Voltage *
Base-EmitterTurn-OnVoltage *
VBE(sat) IC=-1A, IB=-10mA
VBE(on) IC=-1A, VCE=-2V
IC=-10mA, VCE=-2V
-0.8
-1.0
V
V
-0.75
300
250
200
150
100
800
IC=-500mA, VCE=-2V*
hFE
IC=-1A, VCE=-2V*
Static Forward Current Transfer Ratio
IC=-2A, VCE=-2V*
Transitional frequency
Output capacitance
Turn-on time
fT
IC=-50mA, VCE=-5V, f=50MHz
MHz
pF
Cobo
t(on)
t(off)
VCB=-10V, f=1MHz
IC=-500mA, VCC=-10V
IB1=IB2=-50mA
24
35
ns
Turn-off time
600
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
FZT790A
2
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