FDB2552 [KEXIN]
N-Channel PowerTrench MOSFET; N沟道PowerTrench MOSFET的![FDB2552](http://pdffile.icpdf.com/pdf1/p00146/img/icpdf/FDB25_810349_icpdf.jpg)
型号: | FDB2552 |
厂家: | ![]() |
描述: | N-Channel PowerTrench MOSFET |
文件: | 总2页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
MOSFET
N-Channel PowerTrench MOSFET
KDB2552(FDB2552)
Features
TO-263
Unit: mm
rDS(ON) = 32m (Typ.), VGS = 10V, ID = 16A
Qg(tot) = 39nC (Typ.), VGS = 10V
Low Miller Charge
+0.2
4.57
-0.2
+0.1
1.27
-0.1
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
+0.1
-0.1
0.1max
1.27
+0.1
0.81
-0.1
2.54
1 Gate
+0.2
2.54
-0.2
2 Drain
3 Source
+0.1
5.08
-0.1
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous TC=25
TA=25
Symbol
VDSS
Rating
Unit
V
150
VGSS
V
20
37
A
ID
5
150
A
Power dissipation
W
W/
/W
PD
1.0
Derate above 25
Thermal Resistance Junction to Ambient
Channel temperature
Storage temperature
RèJA
Tch
43
175
Tstg
-55 to +175
1
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SMD Type
MOSFET
KDB2552(FDB2552)
Electrical Characteristics Ta = 25
Parameter
Symbol
VDSS
Testconditons
ID=250ìA VGS=0V
Min
150
Typ
Max
Unit
V
Drain to source breakdown voltage
VDS=120V,VGS=0
VDS=120V,VGS=0,TC=150
VGS= 20V
1
Drain cut-off current
IDSS
A
250
100
4.0
Gate leakage current
Gate threshold voltage
IGSS
nA
V
VGS(th)
VDS = VGS, ID = 250ìA
VGS=10V,ID=16A
VGS=6V,ID=8A
2.0
0.032 0.036
0.036 0.054
0.084 0.097
2800
Drain to source on-state resistance
RDS(on)
Ù
VGS=10V,ID=16A,TC=175
Input capacitance
Ciss
Coss
Crss
Qg(TOT)
Qg(TH)
Qgs
pF
pF
pF
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
ns
ns
nC
V
Output capacitance
VDS=25V,VGS=0,f=1MHZ
285
Reverse transfer capacitance
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain "Miller" Charge
Turn-On Time
55
VGS = 0V to 10V
VGS = 0V to 2V
VDS = 75V,
Ig=1.0mA
39
5.2
13.5
8.4
8.3
51
6.8
Qgs2
Qgd
ID = 16A
tON
62
Turn-On Delay Time
Rise Time
td(ON)
tr
td(OFF)
tf
tOFF
trr
12
29
36
29
VDD = 75V, ID = 16A
VGS = 10V, RGS = 8.2
Turn-Off Delay Time
Fall Time
Turn-Off Time
97
90
Reverse Recovery Time
Reverse Recovered Charge
ISD = 16A, diSD/dt = 100A/ìs
ISD = 16A, diSD/dt = 100A/ìs
ISD = 16A
QRR
242
1.25
1.0
Source to Drain Diode Voltage
VSD
ISD = 8A
V
2
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TYSEMI
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