BCX55-16 [KEXIN]
NPN Medium Power Transistors; NPN型中功率晶体管![BCX55-16](http://pdffile.icpdf.com/pdf1/p00145/img/icpdf/BCX55_801953_icpdf.jpg)
型号: | BCX55-16 |
厂家: | ![]() |
描述: | NPN Medium Power Transistors |
文件: | 总2页 (文件大小:54K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
Transistors
NPN Medium Power Transistors
BCX54,BCX55,BCX56
Features
High current (max. 1 A).
Low voltage (max. 80 V).
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
Rating
Unit
V
Collector-base voltage
Collector-emitter voltage
BCX54
45
BCX55
BCX56
BCX54
BCX55
BCX56
60
V
100
V
VCEO
45
V
60
V
80
V
Emitter-base voltage
Collector current
VEBO
IC
5
V
1
A
Peak collector current
Peak base current
ICM
1.5
0.2
A
IBM
A
Total power dissipation
Storage temperature
Junction temperature
Operating ambient temperature
Ptot
1.3
W
Tstg
Tj
-65 to +150
150
Ramb
Rth(j-a)
Rth(j-s)
-65 to +150
94
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
K/W
K/W
14
1
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SMD Type
Transistors
BCX54,BCX55,BCX56
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
VCB = 30 V, IE = 0
Min
Typ
Max
100
10
Unit
nA
Collector cutoff current
ìA
nA
VCB = 30 V, IE = 0; Tj = 125
VEB = 5 V, IC = 0
Emitter cutoff current
DC current gain
IEBO
hFE
100
IC = 5 mA; VCE = 2 V
IC = 150 mA; VCE = 2 V
IC = 500 mA; VCE = 2 V
IC = 150 mA; VCE = 2 V
IC = 150 mA; VCE = 2 V
63
63
250
40
DC current gain BCX54-10,BCX55-10,BCX56-10
BCX54-16,BCX55-16,BCX56-16
Collector-emitter saturation voltage
Base to emitter voltage
hFE
63
160
250
0.5
1
100
VCE(sat) IC = 500 mA; IB = 50 mA
V
V
VBE
fT
IC = 500 mA; VCE = 2 V
Transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
130
1.3
MHz
hFE
hFE
DC current gain ratio of the
complementary pairs
1.6
IC = 150 mA; VCE = 2V
hFE Classification
TYPE
BCX54
BA
BCX54-10
BC
BCX54-16
Marking
BD
TYPE
BCX55
BE
BCX55-10
BG
BCX55-16
BM
Marking
TYPE
BCX56
BH
BCX56-10
BK
BCX56-16
BL
Marking
2
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