BCP53 [KEXIN]
PNP Medium Power Transistors; PNP中功率晶体管
| 型号： | BCP53 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Medium Power Transistors |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Medium Power Transistors
BCP51,BCP52,BCP53
SOT-223
Unit: mm
+0.2
3.50
-0.2
+0.2
-0.2
6.50
Features
+0.2
0.90
-0.2
High collector current
1.3 W power dissipation.
+0.1
-0.1
3.00
+0.3
7.00
-0.3
4
1 base
1
2
3
2 collector
+0.1
0.70
-0.1
2.9
3 emitter
4.6
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
Rating
-45
-60
-100
-45
-60
-80
-5
Unit
V
Collector-base voltage (open emitter)
BCP51
BCP52
BCP53
BCP51
BCP52
BCP53
V
V
Collector-emitter voltage(open base)
V
VCEO
V
V
Emitter-base voltage( open collector)
Collector current
VEBO
IC
V
-1
A
Peak collector current
Peak base current
ICM
-1.5
-0.2
1.3
A
IBM
A
Ptot
W
Total power dissipation Tamb
Storage temperature
25
Tstg
Tj
-65 to +150
Junction temperature
150
-65 to +150
95
Operating ambient temperature
Ramb
Rth(j-a)
Rth(j-s)
Thermal resistance from junction to ambient
Thermal resistance from junction to solder point
K/W
K/W
14
1
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SMD Type
Transistors
BCP51,BCP52,BCP53
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
Testconditons
VCB = -30 V, IE = 0
Min
Typ
Max
-100
-10
Unit
nA
Collector cutoff current
Emitter cutoff current
ìA
nA
VCB = -30 V, IE = 0; Tj = 125
VEB = -5 V, IC = 0
IEBO
-100
IC = -5 mA; VCE = -2 V
IC = -150 mA; VCE = -2 V
IC = -500 mA; VCE = -2 V
IC = -150 mA; VCE = -2 V
IC = -150 mA; VCE = -2 V
63
63
DC current gain
hFE
hFE
250
40
DC current gain BCP51-10,BCP52-10,BCP53-10
BCP51-16,BCP52-16,BCP53-16
Collector-emitter saturation voltage
Base to emitter voltage
63
160
250
-0.5
-1
100
VCE(sat) IC = -500 mA; IB = -50 mA
V
V
VBE
fT
IC = -500 mA; VCE = -2 V
Transition frequency
IC = -10 mA; VCE = -5 V; f = 100 MHz
115
MHz
2
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