BC860C [KEXIN]
PNP General Purpose Transistor; PNP通用晶体管
| 型号： | BC860C |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP General Purpose Transistor |
| 文件： | 总2页 (文件大小：41K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP General Purpose Transistor
BC859,BC860
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Low current (max. 100 mA).
Low voltage (max. 45 V).
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
BC859
-30
BC860
-50
Unit
V
Collector-emitter voltage
-30
-45
V
-5
Emitter-base voltage
V
-100
-200
-200
250
150
Collector current
mA
mA
mA
mW
Peak collector current
ICM
Peak base current
IBM
Total power dissipation *
Junction temperature
Ptot
Tj
-65 to +150
-65 to +150
500
Storage temperature
Tstg
Operating ambient temperature
Thermal resistance from junction to ambient *
* Transistor mounted on an FR4 printed-circuit board.
Ramb
Rth j-a
K/W
1
www.kexin.com.cn
SMD Type
Transistors
BC859,BC860
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = -30 V, IE = 0
Min
Typ
-1
Max
-15
Unit
nA
ICBO
ICBO
IEBO
Collector cutoff current
Emitter cutoff current
-4
ìA
nA
VCB = -30 V, IE = 0 , Tj = 150
VEB = -5 V, IC = 0
-100
475
800
-300
BC859B,BC860B
DC current gain
BC859C,BC860C
220
420
hFE
VCE(sat)
VBE(sat)
VBE
IC = -2 mA; VCE = -5 V
IC = -10 mA; IB = -0.5 mA
-75
mV
mV
mV
mV
mV
mV
pF
Collector-emitter saturation voltage
IC = -100 mA; IB = -5 mA;
-250 -650
-700
IC = -10 mA; IB = -0.5 mA
Base-emitter saturation voltage *1
Base-emitter voltage *2
IC = -100 mA; IB = -5 mA;
-850
IC = -2 mA; VCE = -5 V
-600 -650 -750
IC = -10 mA; VCE = -5 V
-820
Collector capacitance
Emitter capacitance
Transition frequency
CC
Ce
fT
VCB = -10 V; IE = Ie = 0;f = 1 MHz
IC = Ic = 0; VEB = -500 mV; f = 1 MHz
VCE = -5 V; IC = -10 mA;f = 100 MHz
4.5
10
100
MHz
dB
IC = -200 µA; VCE = -5 V;RS = 2 kÙ;
f = 1 kHz;B = 200 Hz
Noise figure
NF
4
*1. VBEsat decreases by about -1.7 mV/K with increasing temperature.
*2. VBE decreases by about -2 mV/K with increasing temperature.
hFE Classification
TYPE
BC859B
4B
BC859C
4C
Marking
TYPE
BC860B
4F
BC860C
4G
Marking
2
www.kexin.com.cn
相关型号：
BC860C,216
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
NXP
BC860C-TAPE-13
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC860C-TAPE-7
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal
NXP
BC860C/T3
TRANSISTOR 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP
BC860CE6327
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
INFINEON
©2020 ICPDF网 联系我们和版权申明