BAT64-04W [KEXIN]

Silicon Schottky Diodes; 硅肖特基二极管


型号：	BAT64-04W
厂家：	GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：	Silicon Schottky Diodes 硅肖特基二极管肖特基二极管光电二极管
文件：	总2页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMD Type

Diodes

Silicon Schottky Diodes

BAT64W;BAT64-04W

BAT64-05W;BAT64-06W

Features

For low-loss, fast-recovery, meter protection,

bias isolation and clamping applications

Integrated diffused guard ring

Low forward voltage

Absolute M axim um R atings T a = 25

P aram eter

D iode reverse voltage

S ym bol

V ^R

V alue

U nit

Forward current

I^F

250

m A

m W

A verage forward current (50/60H z, sinus)

I^FAV

I^FSM

P tot

120

800

S urge forward current (t

Total power dissipation

100m s)

B A T 64W , T^S

250

120

111

104

P tot

250

Total power dissipation B A T64-04/06W , T^S

P tot

250

Total power dissipation

Junction tem perature

S torage tem perature

B A R 64-05W , T^S

T^j

150

Tstg

-50 to+150

255

Junction - am bient (N ote 1) B A T 64W

Junction - am bient (N ote 1) B A T 64-04/06W

Junction - am bient (N ote 1) B A T 64-05W

R thJA

R ^thJA

R ^thJS

R thJS

K /W

290

455

Junction - soldering point

N ote

B A T 64W

120

B A T 64-04/06W

B A T 64-05W

155

185

1.P ackage m ounted on epoxy pcb 40m m

40m m

1.5m m / 6cm 2 C u

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SMD Type

Diodes

BAT64W;BAT64-04W

BAT64-05W;BAT64-06W

Electrical C haracteristics T a = 25

P aram eter

S ym bol

I^R

C onditions

V ^R= 30 V

M in

Typ

M ax

U nit

R everse current

200

350

430

520

750

V R = 30 V , TA = 85

I^F= 1 m A

320

380

440

570

I^F= 10 m A

Forward voltage

V ^F

m V

I^F= 30 m A

I^F= 100 m A

D iode capacitance

C ^T

V R = 1 V , f = 1 M H z

Marking

Type

BAT64W

63s

BAT64-04W

64s

BAT64-05W

65s

BAT64-06W

66s

Marking

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