BAP64-06 [KEXIN]
Silicon PIN diode; 硅PIN二极管![BAP64-06](http://pdffile.icpdf.com/pdf1/p00155/img/icpdf/BAP64_860915_icpdf.jpg)
型号: | BAP64-06 |
厂家: | ![]() |
描述: | Silicon PIN diode |
文件: | 总1页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SMD Type
Diodes
Silicon PIN diode
BAP64-06
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Features
3
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
Low diode forward resistance
Low series inductance
+0.1
1.9
-0.1
For applications up to 3 GHz.
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
Symbol
VR
Min
Max
175
Unit
V
IF
100
mA
mW
Ptot
Tstg
Tj
250
total power dissipation
storage temperature
junction temperature
Ts = 90
-65
-65
+150
+150
220
thermal resistance from junction to soldering point
Rth j-s
K/W
Electrical Characteristics Ta = 25
Parameter
forward voltage
Symbol
VF
Conditions
IF = 50 mA
Min
Typ
Max
Unit
V
0.95
1.1
10
1
VR = 175 V
reverse leakage current
VR
A
VR = 20 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 20 V; f = 1 MHz
0.52
0.37
0.23
20
diode capacitance
Cd
pF
0.35
40
IF = 0.5 mA; f = 100 MHz; note 1
IF = 1 mA; f = 100 MHz; note 1
10
20
diode forward resistance
charge carrier life time
rD
IF = 10 mA; f = 100 MHz; note 1
2
3.8
1.35
IF = 100 mA; f = 100 MHz; note 1
when switched from IF = 10 mA to
IR = 6mA; RL = 100 ,measured at IR = 3 mA
0.7
1.55
1.4
s
L
series inductance
Note
LS
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
6Kp
1
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