2SJ605 [KEXIN]
MOS Field Effect Transistors; MOS场效应晶体管
| 型号： | 2SJ605 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | MOS Field Effect Transistors |
| 文件： | 总2页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
MOS Field Effect Transistors
2SJ605
TO-263
Unit: mm
+0.2
4.57
-0.2
Features
+0.1
1.27
-0.1
Super low on-state resistance:
RDS(on)1 = 20 m MAX. (VGS = -10 V, ID = -33 A)
RDS(on)2 = 31 m MAX. (VGS = -4.0 V, ID = -33 A)
Low input capacitance
+0.1
1.27
-0.1
0.1max
Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A)
Built-in gate protection diode
+0.1
0.81
-0.1
2.54
1 gate
+0.2
2.54
-0.2
+0.1
5.08
-0.1
+0.2
0.4
-0.2
2 drain
3 source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Symbol
VDSS
VGSS
ID
Rating
-60
20
Unit
V
Gate to Source Voltage
V
Drain Current(DC)
A
65
Drain Current(pulse) *1
ID(pulse)
PT
A
200
1.5
Total Power Dissipation
W
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
-45
Single Avalanche Current *2
Single Avalanche Energy *2
*1. PW 10ìs,Dduty cycle 1%.
*2.Starting Tch=25 ,RG=25Ù,VGS=-20V-0, VDD=-30V
IAS
A
EAS
203
mJ
1
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SMD Type
Transistors
2SJ605
Electrical Characteristics Ta = 25
Parameter
Drain Cut-off Current
Gate Leakage Current
Gate Cut-off Voltage
Symbol
IDSS
IGSS
VGS(off) VDS = -10 V, ID = -1 mA
VDS = -10 V, ID = -33 A
Testconditons
VDS = -60 V, VGS = 0 V
20 V, VDS = 0 V
Min
Typ
Max
-10
10
Unit
A
VGS =
A
-1.5
30
-2.0
59
-2.5
V
Forward Transfer Admittance
S
Yfs
RDS(on)1 VGS = -10 V, ID = -33 A
RDS(on)2 VGS = -4.0 V, ID = -33 A
17
20
31
m
Drain to Source On-state Resistance
22
m
Input Capacitance
Output Capacitance
Feedback Capacitance
Turn-on Delay Time
Rise Time
Ciss
Coss
Crss
td(on)
tr
VDS = -10 V
VGS = 0 V
4600
820
330
15
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
f = 1 MHz
VDD = -30 V, ID = -33 A
VGS = -10 V
RG = 0
14
Turn-off Delay Time
Fall Time
td(off)
tf
100
58
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Qg
VDD= -48 V
VGS = -10 V
ID = -65 A
87
Qgs
Qgd
15
22
VF(S-D) IF = 65 A, VGS = 0 V
1.0
53
trr
IF = 65 A, VGS = 0 V
di/dt = 100 A /
ns
nC
Qrr
110
s
2
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