概述
数据手册2SD875_15 概述
NPN Transistors
2SD875_15 数据手册
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PDF下载SMD Type
Transistors
NPN Transistors
2SD875
1.70 0.1
■ Features
● Large collector power dissipation PC.
● High collector to emitter voltage VCEO
● Complimentary to 2SB767
.
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
80
80
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
0.5
A
I
CP
1
1
P
C
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
80
80
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I = 0
CB= 60V , I = 0
EB= 4V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
100
100
0.4
nA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=300 mA, I
B
=30mA
=30mA
0.2
V
C
=300 mA, I
B
0.85
1.2
h
FE(1)
V
V
V
V
CE= 10V, I
C
= 150mA
130
50
330
DC current gain
hFE(2)
CE= 5V, I = 500mA
C
100
11
Collector output capacitance
Transition frequency
C
ob
CB= 10V, I
CE= 10V, I
E
= 0,f=1MHz
= -50mA,f=200MHz
pF
f
T
E
120
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD875-R
130-220
XR
2SD875-S
185-330
XS
1
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SMD Type
Transistors
NPN Transistors
2SD875
■ Typical Characterisitics
PC — Ta
IC — VCE
VCE(sat) — IC
1.4
1.2
10
IC/IB=10
Printed circut board: Copper
foil area of 1cm2 or more, and
Ta=25˚C
the board thickness of 1.7mm
for the collector portion.
3
1
IB=10mA
1.2
1.0
9mA
8mA
1.0
7mA
6mA
0.8
0.6
0.4
0.2
0
0.3
0.1
0.8
0.6
0.4
0.2
0
Ta=75˚C
5mA
4mA
3mA
25˚C
–25˚C
0.03
0.01
2mA
1mA
0.003
0.001
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
1
3
10
30
100 300 1000
(
)
( )
V
(
)
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC mA
VBE(sat) — IC
hFE — IC
fT — IE
100
300
200
160
120
80
VCB=10V
Ta=25˚C
IC/IB=10
VCE=10V
30
10
250
200
150
100
50
Ta=75˚C
25˚C
3
1
25˚C
–25˚C
Ta=–25˚C
75˚C
0.3
0.1
40
0.03
0.01
0
0
–1
1
3
10
30
100 300 1000
1
3
10
30
100 300 1000
–3
–10
–30
–100
(
)
(
)
(
)
Collector current IC mA
Collector current IC mA
Emitter current IE mA
Cob — VCB
Area of safe operation (ASO)
50
40
30
20
10
0
10
Single pulse
IE=0
f=1MHz
Ta=25˚C
T
C=25˚C
3
1
ICP
IC
t=1s
0.3
0.1
DC
0.03
0.01
0.003
0.001
1
3
10
30
100
0.1
0.3
1
3
10
30
100
( )
V
( )
V
Collector to base voltage VCB
Collector to emitter voltage VCE
2
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