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2SD874A_15 [KEXIN]

NPN Transistors;
2SD874A_15
型号： 2SD874A_15
厂家： GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述：

NPN Transistors
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中文：  中文翻译
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SMD Type  
Transistors  
NPN Transistors  
2SD874A  
■ Features  
1.70 0.1  
● Large collector power dissipation P  
C
● Low collector-emitter saturation voltage VCE(sat)  
● Complimentary to 2SB766A  
0.42 0.1  
0.46 0.1  
1.Base  
2.Collector  
3.Emitter  
■ Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
60  
V
50  
5
1
Collector Current - Continuous  
Collector Power Dissipation  
Junction Temperature  
I
C
A
P
C
500  
mW  
T
J
150  
℃
Storage Temperature Range  
T
stg  
-55 to 150  
■ Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Ic= 100 μA， I = 0  
Ic= 2 mA， I = 0  
= 100μA， I  
Min  
60  
50  
5
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
E
B
I
E
C
= 0  
I
CBO  
EBO  
V
V
CB= 50 V , I  
EB= 4V , I  
E
= 0  
100  
100  
0.4  
nA  
V
I
C
=0  
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=500 mA, I  
B
=50mA  
=50mA  
V
C=500 mA, I  
B
1.2  
h
FE(1)  
FE(2)  
V
V
V
V
CE= 10V, I  
CE= 5V, I = 1A  
= 0,f=1MHz  
= 50mA,f=200MHz  
C
= 500mA  
85  
50  
340  
DC current gain  
h
C
Collector output capacitance  
Transition frequency  
C
ob  
CB= 10V, I  
CE= 10V, I  
E
20  
pF  
f
T
C
200  
MHz  
■ Classification of hfe(1)  
Type  
Range  
Marking  
2SD874A-Q  
85-170  
YQ  
2SD874A-R  
120-240  
YR  
2SD874A-S  
170-340  
YS  
1
www.kexin.com.cn  
SMD Type  
Transistors  
NPN Transistors  
2SD874A  
■ Typical Characterisitics  
Static Characteristic  
hFE ——  
IC  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1000  
5.0mA  
4.5mA  
4.0mA  
3.5mA  
3.0mA  
COMMON  
EMITTER  
Ta=25℃  
Ta=100℃  
2.5mA  
Ta=25℃  
2.0mA  
100  
1.5mA  
1.0mA  
IB=0.5mA  
COMMON EMITTER  
VCE= 10V  
10  
0.4  
0
2
4
6
8
10  
12  
13  
1
10  
100  
1000  
COLLECTOR CURRENT IC (mA)  
COLLECTOR-EMITTER VOLTAGE VCE (V)  
VCEsat ——  
IC  
VBEsat ——  
IC  
1000  
100  
10  
1200  
900  
β=10  
β=10  
600  
Ta=100 ℃  
Ta=25℃  
Ta=100 ℃  
Ta=25℃  
300  
0.1  
0.1  
1
10  
100  
1000  
1
10  
100  
1000  
COLLECTOR CURREMT IC (mA)  
COLLECTOR CURREMT IC (mA)  
IC —— VBE  
fT —— IC  
1000  
1000  
COMMON EMITTER  
VCE=10V  
100  
10  
1
100  
10  
1
COMMON EMITTER  
CE= 10V  
Ta=25℃  
V
0.1  
300  
600  
900  
1200  
2.38  
10  
70  
COLLECTOR CURRENT IC (mA)  
BASE-EMMITER VOLTAGE VBE (mV)  
PC —— Ta  
Cob/Cib —— VCB/VEB  
600  
500  
400  
300  
200  
100  
0
1000  
f=1MHz  
IE=0/IC=0  
Ta=25 ℃  
100  
10  
1
Cib  
Cob  
0.1  
0.3  
0
25  
50  
75  
100  
125  
150  
30  
1
10  
AMBIENT TEMPERATURE Ta (℃)  
REVERSE VOLTAGE  
V
(V)  
2
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