2SD596-DV4-HF [KEXIN]
NPN Transistors;
| 型号： | 2SD596-DV4-HF |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1377K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD596-HF
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High DC Current gain.
● Complimentary to 2SB624-HF
1
2
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
+0.1
+0.05
-0.01
0.95
-0.1
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
30
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
25
5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
700
200
150
mA
P
C
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 1 mA， I = 0
= 100μA， I
Min
30
25
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
= 0
I
CBO
EBO
V
V
CB= 30 V , I
EB= 5V , I
E
= 0
100
100
0.6
1.2
0.7
400
nA
V
I
C
=0
Collector-emitter saturation voltage
(Note.1)
(Note.1)
(Note.1)
V
CE(sat)
BE(sat)
I
I
C
=700 mA, I
B
=70mA
=70mA
Base - emitter saturation voltage
V
C=700 mA, I
B
Base - emitter voltage
DC current gain
V
BE
V
V
V
V
V
CE= 6V, I
CE= 1V, I
CE= 1V, I
CB= 6V, I
CE= 6V, I
C
C
C
= 10mA
0.6
110
50
hFE(1)
= 100mA
= 700mA
(Note.1)
hFE(2)
Collector output capacitance
Transition frequency
Cob
E= 10mA , f=10MHz
12
pF
f
T
C= 10mA
170
MHz
Note.1: Pulse test : Pulse width ≤350μs,Duty Cycle≤2%.
■ Classification of hfe(1)
Type
Range
Marking
2SD596-DV1-HF
110-180
2SD596-DV2-HF
135-220
2SD596-DV3-HF
170-270
2SD596-DV4-HF
200-320
2SD596-DV5-HF
250-400
DV1
F
DV2
F
DV3
F
DV4
F
DV5
F
1
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SMD Type
Transistors
NPN Transistors
2SD596-HF
■ Typical Characterisitics
hFE —— IC
Static Characteristic
180
160
140
120
100
80
600
COMMON EMITTER
VCE= 1V
COMMON
EMITTER
Ta=25℃
550
500
450
400
350
300
250
200
150
100
50
500uA
450uA
400uA
350uA
300uA
250uA
Ta=100 o
C
Ta=25 o
C
200uA
60
150uA
100uA
40
20
IB=50uA
0
0.0
0.5
1.0
1.5
2.0
2.5
700
100
1.0
1
10
100
700
700
20
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
VBEsat —— IC
1.2
1.0
0.8
0.6
0.4
0.2
0.0
350
300
250
200
150
100
50
β=10
β=10
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
0
0.1
1
10
100
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Cob / Cib ——
fT ——
VCB / VEB
IC
300
250
200
150
100
50
COMMON EMITTER
VCE=6V
f=1MHz
IE=0 / IC=0
Ta=25 o
Ta=25 o
C
C
100
Cib
10
Cob
0
1
0.1
1
10
1
10
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT IC (mA)
IC —— VBE
Pc —— Ta
250
200
150
100
50
700
100
Ta=100 o
C
10
Ta=25℃
1
COMMON EMITTER
VCE=6V
0.1
0.2
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0
25
50
75
100
125
150
AMBIENT TEMPERATURE Ta (℃)
BASE-EMITTER VOLTAGE
VBE(V)
2
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