2SD2230 [KEXIN]
NPN Silicon Epitaxia; NPN硅Epitaxia
| 型号： | 2SD2230 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon Epitaxia |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon Epitaxia
2SD2230
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
High hFE and high current.
Low VCE(sat).
1
2
+0.1
0.95
-0.1
+0.05
-0.01
0.1
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current(dc)
Total power dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
ID
16
16
5
V
V
500
mA
mW
PT
200
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
Testconditons
Min
Typ
Max
100
100
Unit
nA
ICBO
IEBO
VCB = 16 V, IE = 0
VEB = 6.0 V, IC = 0
nA
hFE 1 VCE = 1.0 V, IC = 100 mA
hFE 2 VCE = 1.0 V, IC = 500 mA
200
200
550
DC current gain *
Base to emitter voltage *
Collector saturation voltage
VBE
VCE = 1.0 V, IC = 10 mA
700
50
mV
mV
mV
pF
VCE(sat) 1 IC = 100 mA, IB = 10 mA
VCE(sat) 2 IC = 500 mA, IB = 20 mA
33
150
200
15
Output capacitance
Cob
fT
VCB = 10 V, IE = 0 , f = 1.0 MHz
VCE = 1.0 V, IE = -100 mA
Gain bandwidth product
50
MHz
* Pulsed: PW
350 µs, duty cycle
2%
Marking
Marking
D46
1
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