2SD2210 [KEXIN]
Silicon NPN Epitaxial Planar Type; NPN硅外延平面型
| 型号： | 2SD2210 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN Epitaxial Planar Type |
| 文件： | 总2页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN Epitaxial Planar Type
2SD2210
Features
Low collector-emitter saturation voltage VCE(sat)
Low on resistance ron.
High forward current transfer ratio hFE.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
25
20
V
12
V
Collector current
1
A
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
ICP
0.5
1
A
PC
W
Tj
150
Tstg
-55 to +150
1
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SMD Type
Transistors
2SD2210
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VCB = 25 V, IE = 0
Min
Typ
Max
1
Unit
ìA
V
Collector-base cutoff current
Collector-base voltage
ICBO
VCBO
VCEO
VEBO
hFE
IC = 10 ìA, IE = 0
IC = 1 mA, IB = 0
IE = 10 ìA, IC = 0
VCE = 2 V, IC = 0.5 A
25
20
Collector-emitter voltage
Emitter-base voltage
V
12
V
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
200
800
0.4
1.2
VCE(sat) IC = 0.5 A, IB = 20 mA
VBE(sat) IC = 0.5 A, IB = 20 mA
0.13
V
V
fT
VCB = 10 V, IE = -50 mA, f = 200 MHz
VCB = 10 V, IE = 0, f = 1 MHz
200
10
MHz
pF
Collector output capacitance
Cob
ON resistance
Ron
1.0
Ù
hFE Classification
IK
Marking
Rank
hFE
R
S
T
200 350
300 500
400 800
2
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