2SD2153 [KEXIN]
High Gain Amplifier Transistor; 高增益放大器晶体管
| 型号： | 2SD2153 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | High Gain Amplifier Transistor |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
High Gain Amplifier Transistor
2SD2153
SOT-89
Unit: mm
+0.1
4.50
-0.1
+0.1
1.50
-0.1
+0.1
1.80
-0.1
Features
Low saturation voltage.
Excellent DC current gain characteristics.
2
3
+0.1
0.53
-0.1
1
+0.1
0.48
-0.1
+0.1
0.44
-0.1
1. Base
+0.1
3.00
-0.1
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
30
Unit
V
25
V
6
V
Collector current
2
A
Collector power dissipation
Junction temperature
Storage temperature
PC
0.5
150
W
Tj
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
30
25
6
V
V
ICBO
IEBO
VCB=20V
VEB=5V
0.5
0.5
ìA
ìA
V
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
VCE(sat) IC=1A, IB=20mA
0.12
0.5
hFE
fT
VCE=6V, IC=0.5A
560
2700
VCE=10V, IE= -10mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
110
22
MHz
pF
Transition frequency
Cob
hFE Classification
DN
Marking
Rank
hFE
U
V
W
560 1200
820 1800
1200 2700
1
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