概述
数据手册2SD1803-R 概述
NPN Transistors
2SD1803-R 数据手册
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PDF下载SMD Type
Transistors
NPN Transistors
2SD1803
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● Low Collector-to-Emitter Saturation Voltage
● Fast Switching Speed
0.127
max
+0.1
-0.1
● High Current And High fT.
0.80
● Complementary to 2SB1203
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
60
50
6
V
Collector Current - Continuous
Collector Current - Pulse
I
C
5
A
I
CP
8
20
1
Collector Power Dissipation
Tc = 25℃
Ta = 25℃
P
C
W
℃
Junction Temperature
T
J
150
Storage Temperature Range
T
stg
-40 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
60
50
6
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 1 mA， RBE= ∞
= 100μA， I = 0
CB= 50 V , I = 0
EB= 5V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
1
uA
V
I
C
1
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=3 A, I
B
=150mA
=150mA
0.22
0.95
0.4
1.3
400
V
C
=3 A, I
B
hFE(1)
V
V
CE= 2V, I
CE= 2V, I
C
= 500mA
= 4 A
70
35
DC current gain
hFE(2)
C
Turn-on Time
t
on
50
500
20
See Test Circuit
ns
Storage Time
t
stg
Fall Time
t
f
Collector output capacitance
Transition frequency
C
ob
T
V
V
CB= 10V, I
E
= 0,f=1MHz
40
pF
f
CE= 5V, I = 1 A
C
180
MHz
■ Classification of hfe(1)
Type
2SD1803-Q
70-140
2SD1803-R
100-200
2SD1803-S
140-280
2SD1803-T
200-400
Range
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1803
TEST CIRCUIT
IB1
RB
INPUT
OUTPUT
IB2
RL
VR
50
+
+
100μ
470μ
25V
-5V
PW=20μS
Duty Cycle≦1%
Ic=10IB1=-10IB2=2A
(Unit : (resistance : Ω, capacitance : F))
■ Typical Characterisitics
Ic -VCE
Ic -VCE
5
5
25mA
30mA
35mA
40mA
45mA
4
3
4
3
25mA
20mA
20mA
15mA
15mA
10mA
10mA
5mA
2
2
1
5mA
1
IB=0
IB=0
0
0
0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
Collector to Emitter Voltage, VCE (V)
Ic -VBE
Collector to Emitter Voltage, VCE (V)
C
hFE -I c
1000
6
VCE=2V
VCE=2V
7
5
5
4
3
Ta=75 C
3
2
100
Ta=25 C
Ta=-25 C
Ta=75 C
Ta=25 C
7
5
2
1
0
3
2
Ta=-25
1.0
C
10
2
3
5 7
0.1
0
0.2
2
3
5 7
1.0
2 3 5 7
0.4
0.8
0.6
1.2
10
5 7 0.01
Base to Emitter Voltage, VBE (V)
Collector Current, IC (A)
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1803
■ Typical Characterisitics
fT -I c
Cob -VcB
5
1000
7
VCE=5V
f=1MHz
3
2
3
2
100
7
5
100
7
5
3
2
3
2
10
10
5
7
5 7
2
3
2 3
2
3
5
7
5
7
2
3
5
7
5 7
100
2
3
10
1.0
1.0
10
0.1
Colletcor Current, Ic (A)
Colletcor to Base Voltage, VCB (V)
3
www.kexin.com.cn
2SD1803-R 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SD1803-R-TM3-T | UTC | Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, TO-251, 3 PIN | 获取价格 |
|
| 2SD1803-R-TN3-T | UTC | Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, TO-252, 3 PIN | 获取价格 |
|
| 2SD1803-S | KEXIN | NPN Transistors | 获取价格 |
|
| 2SD1803-S-TM3-T | UTC | Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-251, TO-251, 3 PIN | 获取价格 |
|
| 2SD1803-S-TN3-T | UTC | Small Signal Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, TO-252, 3 PIN | 获取价格 |
|
| 2SD1803-T | KEXIN | NPN Transistors | 获取价格 |
|
| 2SD1803-TL-S | ONSEMI | 暂无描述 | 获取价格 |
|
| 2SD1803-TM3-T | UTC | HIGH CURRENT SWITCHING APPLICATION | 获取价格 |
|
| 2SD1803-X-TM3-T | UTC | HIGH CURRENT SWITCHING APPLICATION | 获取价格 |
|
| 2SD1803-X-TN3-R | UTC | HIGH CURRENT SWITCHING APPLICATION | 获取价格 |
|
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