2SD1766 [KEXIN]
Medium Power Transistor; 中功率晶体管
| 型号： | 2SD1766 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Medium Power Transistor |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Medium Power Transistor
2SD1766
SOT-89
Unit: mm
+0.1
-0.1
+0.1
1.50
-0.1
4.50
1.80
+0.1
-0.1
Features
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
Low VCE(sat), VCE(sat) = 0.5V (typical)
(IC = 2A, IB = 0.2A).
1. Base
+0.1
-0.1
3.00
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
Rating
Unit
V
40
VCEO
32
V
VEBO
5
V
Collector current
IC
2
A
IC (Pulse) *1
2.5
A
Collector power dissipation
PC
0.5
2
W
W
2
PC
Tj
*
Junction temperature
Storage temperature
150
Tstg
-55 to +150
*1. Pw=20ms.
*2. 40 40 0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
40
32
5
Typ
Max
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
BVCBO IC=50ìA
BVCEO IC=1mA
BVEBO IE=50ìA
V
V
Collector cutoff current
Emitter cutoff current
ICBO
IEBO
hFE
VCB=20V
VEB=4V
1
1
ìA
ìA
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
VCE=3V,IC=0.5A
82
390
0.8
VCE(sat) IC=2A,IB=0.2A
0.5
100
30
V
fT
VCE=5V, IE= -500mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
MHz
pF
Output capacitance
Cob
hFE Classification
DB
Marking
Rank
hFE
P
Q
R
82 180
120 270
180 390
1
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