2SD1366-HF_15 [KEXIN]
NPN Transistors;
| 型号： | 2SD1366-HF_15 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：902K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1366-HF
1.70 0.1
■ Features
● Low frequency power amplifier
● Complementary to 2SB1000-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
25
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
20
5
Collector Current - Continuous
Collector Current - Pulse (Note.1)
Collector Power Dissipation
Junction Temperature
I
C
1
A
I
CP
1.5
1
P
C
W
℃
T
J
150
Storage Temperature Range
T
stg
-55 to 150
Note.1:PW ≤ 10 ms, Duty cycle ≤ 20%.
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
25
20
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 uA， I
Ic= 1 mA， RBE=∞
= 100 uA， I = 0
CB= 20 V , I = 0
EB= 4V , I =0
E= 0
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.3
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
BE(sat)
I
I
C
=800 mA, I
B
=80mA
=80mA
0.15
0.9
V
C
=800 mA, I
B
hFE
V
V
V
CE= 2V, I
CB= 10V, I
CE= 2V, I = 500mA
C= 0.5 A
85
240
Collector output capacitance
Transition frequency
C
ob
T
E= 0,f=1MHz
22
pF
f
C
240
MHz
■ Classification of hfe
Type
Range
Marking
2SD1366-A-HF
85-170
2SD1366-B-HF
120-240
AA
F
AB
F
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1366-HF
■ Typical Characterisitics
Typical Output Characteristics
Maximum Collector Dissipation Curve
1,000
1.2
7
6
5
800
600
400
200
0.8
0.4
4
3
2
1 mA
IB = 0
0
0.4
0.8
1.2
1.4
1.6
0
50
100
150
。
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta ( C)
DC Current Transfer Ratio
vs. Collector Current
Typical Transfer Characteristics
VCE = 2 V
1,000
5,000
VCE = 2 V
2,000
1,000
500
300
100
。
。
Ta = 75 C
25 C
。
Ta = 75 C
200
100
50
30
10
3
。
25 C
20
10
1
5
0
0.2
0.4
0.6
0.8
1.0
1
3
10
30
100 300 1,000
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
Gain Bandwidth Product
vs. Collector Current
Collector to Emitter Saturation
Voltage vs. Collector Current
300
0.25
0.20
0.15
0.10
0.05
0
VCE = 2 V
IC = 10 I
B
200
100
0
25
。
Ta = 75 C
10
30
100
300
1,000
1
3
10
30
100 300 1,000
Collector Current IC (mA)
Collector Current IC (mA)
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1366-HF
■ Typical Characterisitics
Collector Output Capacitance vs.
Collector to Base Voltage
200
100
50
f = 1 MHz
E =0
I
20
10
5
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
3
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