2SD1257-P [KEXIN]
NPN Transistors;
| 型号： | 2SD1257-P |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：885K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1257
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
■ Features
2.30
-0.1
+0.8
-0.7
+0.2
5.30
-0.2
0.50
● Satisfactory linearity of foward current transfer ratio hFE
● Low collector to emitter saturation voltage VCE(sat)
● Large collector current I
C
0.127
max
+0.1
-0.1
0.80
● Complementary to 2SB934
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
130
80
7
V
Collector Current - Continuous
Collector Current - Pulse
I
C
7
A
I
CP
15
40
1.3
150
Collector Power Dissipation
Tc = 25℃
Ta = 25℃
P
C
W
℃
Junction Temperature
TJ
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
130
80
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic= 10 mA， I
= 100μA， I
CB= 100 V , I
EB= 5V , I =0
E
= 0
= 0
= 0
= 0
B
7
I
E
C
I
CBO
EBO
V
V
E
10
50
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
I
C
=5 A, I
B
=250mA
=250mA
0.5
1.5
V
C
=5 A, I
B
h
FE(1)
FE(2)
V
V
CE= 2V, I
CE= 2V, I
C
= 100mA
= 3 A
45
60
DC current gain
h
C
260
Turn-on time
Storage time
Fall time
t
on
0.5
1.5
0.1
30
I
C
= 3A, IB1 = 300mA, IB2 = –
us
t
stg
300mA, CC = 50V
V
t
f
Transition frequency
f
T
V
CE= 10V, I
C= 500mA,f=10MHz
MHz
■ Classification of hfe(2)
Type
2SD1257-R
60-120
2SD1257-Q
90-180
2SD1257-P
130-260
Range
1
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SMD Type
Transistors
NPN Transistors
2SD1257
■ Typical Characterisitics
PC — Ta
IC — VCE
VCE(sat) — IC
50
10
(1) IC/IB=10
(2) IC/IB=20
TC=25˚C
(1) TC=Ta
(2) With a 50 × 50 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
10
TC=25˚C
(1)
40
30
20
10
0
8
3
1
IB=55mA
50mA
45mA
40mA
6
(2)
(1)
35mA
0.3
0.1
4
2
0
30mA
20mA
15mA
10mA
0.03
0.01
(2)
(3)
5mA
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0.01
0.03
0.1
0.3
1
3
(
)
( )
V
( )
A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
Collector current IC
VCE(sat) — IC
VBE(sat) — IC
VBE(sat) — IC
100
100
IC/IB=20
IC/IB=20
(1) IC/IB=10
10
(2) IC/IB=20
C=25˚C
30
10
30
10
T
3
1
(1)
(2)
3
1
3
1
TC=–25˚C
0.3
0.1
TC=100˚C
100˚C
25˚C
0.3
0.1
0.3
0.1
25˚C
–25˚C
0.03
0.01
0.03
0.01
0.03
0.01
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
hFE — IC
fT — IC
Cob — VCB
10000
10000
10000
VCE=2V
VCE=10V
f=10MHz
IE=0
f=1MHz
3000
3000
1000
3000
1000
TC=25˚C
T
C=25˚C
1000
300
100
300
100
300
100
TC=100˚C
25˚C
–25˚C
30
10
30
10
30
10
3
1
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.1
0.3
1
3
10
30
100
( )
A
( )
A
( )
Collector to base voltage VCB V
Collector current IC
Collector current IC
2
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SMD Type
Transistors
NPN Transistors
2SD1257
■ Typical Characterisitics
ton, tstg, tf — IC
Area of safe operation (ASO)
100
100
Pulsed tw=1ms
Duty cycle=1%
C/IB=10(IB1=–IB2
CC=50V
C=25˚C
Non repetitive pulse
T
C=25˚C
30
10
I
V
T
)
30
ICP
t=0.5ms
10 IC
3
1
3
1
10ms
300ms
1ms
tstg
ton
0.3
0.1
0.3
0.1
tf
0.03
0.01
0.03
0.01
0
1
2
3
4
5
6
7
)
8
1
3
10
30
100 300 1000
(
A
( )
V
Collector current IC
Collector to emitter voltage VCE
Rth(t) — t
103
102
10
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
(1)
(2)
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
s
Time
t
3
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