2SD1048-X6 [KEXIN]
NPN Transistors;
| 型号： | 2SD1048-X6 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：736K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1048
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Large current capacity (IC=0.7A) and low-saturation voltage.
● Complimentary to 2SB815
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
20
Unit
V
VCBO
VCEO
VEBO
15
5
Collector Current - Continuous
Collector Current - Pulse
Collector Power Dissipation
Junction Temperature
I
C
700
1.5
200
125
mA
A
I
CP
P
C
mW
T
J
℃
Storage Temperature Range
T
stg
-55 to 125
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 1 mA， I = 0
= 100μA， I
Min
20
15
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
B
I
E
C
= 0
I
CBO
EBO
V
V
CB= 15 V , I
EB= 4V , I
=5 mA, I
E
= 0
0.1
0.1
25
uA
I
C
=0
I
I
I
C
B
=0.5mA
10
30
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
CE(sat)
mV
V
C
=100 mA, I
=100 mA, I
B
=10mA
=10mA
80
V
BE(sat)
C
B
1.2
900
hFE(1)
V
V
V
V
CE= 2V, I
CE= 2V, I
C
= 50mA
200
80
hFE(2)
C= 500mA
Collector output capacitance
Transition frequency
Cob
CB= 10V, I
CE= 10V, I
E=0,f=1MHz
8
pF
f
T
C= 50mA
250
MHz
■ Classification of hfe(1)
Type
Range
Marking
2SD1048-X6
200-400
X6
2SD1048-X7
300-600
X7
2SD1048-X8
450-900
X8
1
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SMD Type
Transistors
NPN Transistors
2SD1048
■ Typical Characterisitics
I
-- V
CE
V
(sat) -- I
C
CE
C
800
10000
2SD1048
I
C
/ I =10
B
5
700
600
500
400
300
200
3
2
1000
5
3
2
100
5
3
2
100
0
10
I =0
B
(For PNP, minus sign is omitted.)
5
2
3
5
2
3
5
2
3
5
0
0.1
0.2
0.3
0.4
0.5
1.0
10
100
1000
Collector-to-Emitter Voltage, V
-- V
Collector Current, I -- mA
CE
C
I
-- V
BE
f
-- I
T C
B
100
1000
V
=5V
V
=10V
CE
CE
(For PNP, minus sign is omitted.)
7
5
80
60
40
3
2
100
7
5
3
2
20
0
(For PNP, minus sign is omitted.)
10
2
3
5
7
2
3
5
7
0
0.2
0.4
0.6
0.8
1.0
1.0
10
100
Base-to-Emitter Voltage, V
-- V
Collector Current, I -- mA
BE
C
h
-- I
Cob -- V
CB
FE
C
1000
5
V
=2V
f=1MHz
CE
7
5
3
2
2SD1048
3
2
10
100
7
5
7
5
3
2
3
2
(For PNP, minus sign is omitted.)
(For PNP, minus sign is omitted.)
1.0
10
2
3
5
2
3
5
2
3
5
2
3
5
5
7
2
3
5
7
2
3
5
1.0
10
100
1000
1.0
10
Collector Current, I -- mA
Collector-to-Base Voltage, V
-- V
CB
C
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1048
■ Typical Characterisitics
P
-- Ta
C
300
250
200
150
100
50
0
0
20
40
60
80
100
120
140
。
Ambient Temperature, Ta --
C
3
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