2SD1006-L-HF [KEXIN]
NPN Transistors;
| 型号： | 2SD1006-L-HF |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SD1006-HF
1.70 0.1
Features
High collector to emitter voltage: VCEO 100V.
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
V
Collector-base voltage
VCBO
VCEO
VEBO
IC
100
Collector-emitter voltage
Emitter-base voltage
100
V
5
V
Collector current
0.7
A
Collector current (pulse) *
Collector l power dissipation
Junction temperature
IC(pu)
Pc
1.2
2
A
W
Tj
150
Storage temperature
Tstg
-55 to +150
*. PW 10ms,duty cycle 50%
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
100
100
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA， I
Ic=1 mA， I = 0
= 100μA， I = 0
CB= 100 V , I = 0
EB= 5V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
uA
V
I
C
Collector-emitter saturation voltage *
Base - emitter saturation voltage *
Base - emitter voltage *
V
CE(sat)
BE(sat)
I
I
C
=500 mA, I
B
=50mA
=50mA
0.6
V
C
=500 mA, I
B
1.5
V
BE
V
V
V
V
V
CE= 10V, I
C= 10mA
0.55
45
0.68
CE= 1V, I
CE= 1V, I
C
= 5mA
200
200
10
DC current gain
*
hFE
C= 100mA
90
400
Collector output capacitance
Transition frequency
C
ob
T
CB= 10V, I
CE= 10V, I
E
=0,f=1MHz
pF
f
C
= 10mA
90
MHz
*. PW 350us ,duty cycle
2%
hFE Classification(2)
Type
Range
Marking
2SD1006-M-HF 2SD1006-L-HF 2SD1006-K-HF
90-180 135-270 200-400
HM HL HK
F
F
F
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1006-HF
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SD1006-HF
■ Typical Characterisitics
3
www.kexin.com.cn
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