2SC5457 [KEXIN]
Silicon NPN triple diffusion planar type; 硅NPN三重扩散平面型
| 型号： | 2SC5457 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon NPN triple diffusion planar type |
| 文件： | 总1页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon NPN triple diffusion planar type
2SC5457
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Features
High-speed switching
0.127
max
High collector to base voltage VCBO
Wide area of safe operation (ASO)
Satisfactory linearity of foward current transfer ratio hFE
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
VCBO
VCES
VCEO
VEBO
ICP
Rating
Unit
V
Collector to base voltage
500
500
V
Collector to emitter voltage
400
V
Emitter to base voltage
Peak collector current
Collector current
7
V
6
A
IC
3
A
Base current
IB
1.2
A
30
Collector power dissipation TC = 25
Ta = 25
PC
W
1
Junction temperature
Storage temperature
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Symbol
ICBO
Testconditons
Min
Typ
Max
100
100
Unit
ìA
ìA
V
VCB = 500V, IE = 0
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
Collector to emitter voltage
VCEO
IC = 10mA, IB = 0
VCE = 5V, IC = 0.1A
VCE = 2V, IC = 1.2A
IC = 1.5A, IB = 0.3A
IC = 1.5A, IB = 0.3A
400
10
8
V
Forward current transfer ratio
hFE
40
1
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
VCE(sat)
VBE(sat)
fT
1.5
V
VCE = 10V, IC = 0.2A, f = 1MHz
10
MHz
Turn-on time
ton
IC = 1.5A, IB1 = 0.15A, IB2 =-0.3A,
VCC = 200V
1.0
3.0
0.3
ìs
Storage time
Fall time
tstg
tf
1
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