2SC4976-E [KEXIN]
NPN Transistors;
| 型号： | 2SC4976-E |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总3页 (文件大小：1259K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC4976
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● High fT : fT=400MHz(typ).
● High breakdown voltage
● Large current capacitance.
● Complementary to 2SA1875
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Current - Pulse
Base Current
V
V
V
CBO
CEO
EBO
200
200
3
V
I
C
300
600
30
mA
I
CP
I
B
Collector Power Dissipation
Tc = 25℃
0.8
12
P
C
W
Junction Temperature
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= 100 μA， I = 0
Ic= 1 mA， RBE= ∞
= 100μA， I = 0
CB= 150V , I = 0
=0
Min
200
200
3
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
E
I
E
C
I
CBO
EBO
V
V
E
0.1
1
uA
V
I
EB= 2V , I
=50mA, I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
BE(sat)
I
C
B
=5mA
=5mA
1
V
I
C=50mA, I
B
1
V
V
V
V
V
CE= 10V, I
CE= 10V, I
C
= 50mA
60
20
320
DC current gain
hFE
C= 250mA
Reverse Transfer Capacitance
Collector output capacitance
Transition frequency
Cre
CB= 30V,f=1MHz
CB= 30V,f=1MHz
3.4
4.2
400
pF
C
ob
T
f
CE= 10V, I
C= 100mA
MHz
■ Classification of hfe(1)
Type
2SC4976-D
60-120
2SC4976-E
100-200
2SC4976-F
160-320
Range
1
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SMD Type
Transistors
NPN Transistors
2SC4976
■ Typical Characterisitics
h
FE
-- I
I
-- V
BE
C
C
5
350
300
250
200
150
100
2SC4976
2SC4976
V
CE
=10V
V
CE
=10V
3
2
Ta=75 C
25
C
100
7
5
3
2
50
0
10
3
5
7
2
3
5
7
2
3
5
0
0.2
0.4
0.6
0.8
1.0
1.2
10
100
Collector Current, I -- mA
Base-to-Emitter Voltage, V
BE
-- V
C
V
(sat) -- I
C
V
(sat) -- I
C
BE
CE
5
3
2
2SC4976
2SC4976
I =10
I
C
/ I =10
B
I
C / B
3
2
1.0
7
1.0
5
7
5
3
2
3
2
0.1
7
5
0.1
3
5
7
2
3
5
7
2
3
5
3
5
7
2
3
5
7
2
3
5
10
100
10
100
Collector Current, I -- mA
C
Collector Current, I -- mA
C
Cre -- V
CB
Cob -- V
CB
3
3
2
2SC4976
f=1MHz
2SC4976
f=1MHz
2
10
10
7
5
7
5
3
2
3
2
1.0
1.0
7
2
3
5
7
2
3
5
7
100
2
7
2
3
5
7
2
3
5
7
100
2
1.0
10
1.0
10
Collector-to-Base Voltage, V
-- V
Collector-to-Base Voltage, V
CB
-- V
CB
2
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SMD Type
Transistors
NPN Transistors
2SC4976
■ Typical Characterisitics
f
-- I
P
-- Ta
T
C
C
2
1.0
2SC4976
V
=10V
CE
1000
7
5
0.8
0.6
0.4
3
2
100
7
5
3
2
0.2
0
10
7
2
3
5
7
2
3
5
7
2
3
5
1.0
10
100
0
20
40
60
80
100
120
140
160
。
Collector Current, I -- mA
C
Ambient Temperature, Ta --
C
P
-- Tc
A S O
C
14
12
10
8
1000
I
=600mA
CP
7
5
I =300mA
C
3
2
100
7
5
6
3
2
4
10
。
Tc=25 C
2
0
7
5
Single pulse
For PNP, minus sign is omitted
3
0
20
40
60
80
100
120
140
160
3
5
7
2
3
5
7
2
3
10
100
-- V
。
Case Temperature, Tc --
C
Collector-to-Emitter Voltage, V
CE
3
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