2SC4178 [KEXIN]
NPN Silicon Epitaxia; NPN硅Epitaxia
| 型号： | 2SC4178 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Silicon Epitaxia |
| 文件： | 总1页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Silicon Epitaxia
2SC4178
Features
Micro package.
High gain bandwidth product.
Low output capacitance.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
20
V
4
20
V
mA
mW
Total power dissipation
Junction temperature
Storage temperature
PT
150
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
ICBO
hFE
VCE(sat) IC = 10mA , IB = 1.0mA
Testconditons
VCB = 30V, IE=0
VCE = 6V , IC = 1.0mA
Min
40
Typ
Max
100
180
0.3
Unit
nA
Collector cutoff current
DC current gain *
90
0.1
600
1.0
12
Collector-emitter saturation voltage *
Gain bandwidth product
Output capacitance
V
MHz
pF
fT
VCE = 6V , IE = -1.0mA
400
Cob
VCE = 6V , IE = 0, f = 1MHz
Collector to base time constant
Cc'rb'b VCE = 6V , IE = -1.0mA , f = 31.9MHz
ps
VCE = 6V , IE = -1.0mA , Rg = 50Ù, f =
Noise figure
NF
3
dB
100MHz
hFE Classification
Marking
hFE
F12
F13
F14
40 80
60 120
90 180
1
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