2SC2780 [KEXIN]
NPN Transistors;型号: | 2SC2780 |
厂家: | GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
描述: | NPN Transistors 放大器 晶体管 |
文件: | 总3页 (文件大小:1202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
2SC2780
SOT-89
Unit:mm
1.70 0.1
■ Features
● Collector Current Capability IC=50mA
● Collector Emitter Voltage VCEO=140V
● Complementary to 2SA1173
0.42 0.1
0.46 0.1
1.Base
2.Collector
3.Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Symbol
Rating
140
140
5
Unit
V
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
I
C
50
mA
W
Collector Current - Pluse
Collector Power Dissipation
Junction Temperature
(Note.1)
I
CP
100
2
P
C
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
Note.1 : PW ≤ 10ms,Duty Cycle ≤ 50%
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
140
140
5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
Ic= 100 μA, I
Ic= 1 mA, I = 0
= 100μA, I = 0
CB= 140 V , I = 0
EB= 5V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
0.1
0.1
0.6
1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=20 mA, I
=20 mA, I
CE= 10V, I
CE= 10V, I
CE= 10V, I
CB= 10V, I
CE= 10V, I
B
=2mA
=2mA
V
C
B
V
BE
V
V
V
V
V
C
C
C
= 10mA
0.65
50
0.75
= 1mA
DC current gain
hFE
= 10mA
90
400
Collector output capacitance
Transition frequency
C
ob
T
E
= 0,f=1MHz
= -10mA
2.3
pF
f
E
120
MHz
■ Classification of hfe(2)
Type
Range
Marking
2SC2780-M
90-180
NM
2SC2780-L
135-270
NL
2SC2780-K
200-400
NK
1
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SC2780
2
www.kexin.com.cn
SMD Type
Transistors
NPN Transistors
2SC2780
■
3
www.kexin.com.cn
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