概述
数据手册2SB962-Z-Q 概述
PNP Transistors
2SB962-Z-Q 数据手册
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PDF下载SMD Type
Transistors
PNP Transistors
2SB962-Z
TO-252
Unit: mm
+0.15
-0.15
6.50
+0.1
-0.1
2.30
+0.8
-0.7
+0.2
5.30
-0.2
0.50
■ Features
● Low collector to emitter saturation voltage VCE(sat).
0.127
max
+0.1
-0.1
0.80
0.1
0.1
0.60+-
1 Base
2.3
4.60
+0.15
-0.15
2 Collector
3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
VCBO
VCEO
VEBO
-40
-30
-5
V
Collector Current - Continuous
Collector current -Pulse
I
C
-3
A
I
CP
-6
Collector Power Dissipation
Junction Temperature
(Note.1)
P
C
2
W
℃
T
J
150
Storage Temperature range
T
stg
-55 to 150
Note.1: PW ≤ 10ms,Duty Cycle ≤ 50℅
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-40
-30
-5
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
CEO
EBO
Ic= -100 μA， I
Ic= -1 mA， I =0
= -100μA， I =0
CB= -30V , I =0
EB= -4V , I =0
=-2 A, I =-200mA (Note.1)
BE(sat) IC=-2 A, IB=-200mA (Note.1)
E=0
V
B
I
E
C
I
CBO
EBO
V
V
E
-10
-1
uA
V
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
V
CE(sat)
I
C
B
-0.3
-1
-0.5
-2
V
h
FE(1)
V
CE= -2V, I
CE= -2V, I
CB = –10V, I
CE= -5V, I = 100mA
C
= -20mA (Note.1)
= -1 A (Note.1)
= 0, f = 1MHz
30
60
150
160
55
DC current gain
hFE(2)
V
C
400
Collector output capacitance
Transition frequency
C
ob
V
V
E
pF
f
T
E
80
MHz
Note.1: Pulsed: PW ≤ 350us,Duty Cycle≤ 2℅
■ Classification of hfe(2)
Type
2SB962-Z-R
60-120
2SB962-Z-Q
100-200
2SB962-Z-P
160-320
2SB962-Z-E
200-400
Range
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SB962-Z
■ Typical Characterisitics
2
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SB962-Z
■ Typical Characterisitics
3
www.kexin.com.cn
2SB962-Z-Q 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SB962-Z-R | KEXIN | PNP Transistors | 获取价格 |
|
| 2SB962-Z-T1Q | NEC | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63, 3 PIN | 获取价格 |
|
| 2SB962-Z-T2 | NEC | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63, 3 PIN | 获取价格 |
|
| 2SB962-Z-T2P | NEC | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63, 3 PIN | 获取价格 |
|
| 2SB962-Z-T2Q | NEC | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63, 3 PIN | 获取价格 |
|
| 2SB962-Z-T2R | NEC | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, PLASTIC, MP-3, SC-63, 3 PIN | 获取价格 |
|
| 2SB962-ZE | NEC | BJT | 获取价格 |
|
| 2SB962-ZE-AZ | RENESAS | TRANSISTOR,BJT,PNP,30V V(BR)CEO,3A I(C),TO-252 | 获取价格 |
|
| 2SB962-ZE-E1 | NEC | Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 2 Pin, MP-3, 3 PIN | 获取价格 |
|
| 2SB962-ZE-E1-AZ | RENESAS | TRANSISTOR,BJT,PNP,30V V(BR)CEO,3A I(C),TO-252 | 获取价格 |
|
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