2SB799 [KEXIN]
PNP Silicon Epitaxial Transistor; PNP硅外延晶体管
| 型号： | 2SB799 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Silicon Epitaxial Transistor |
| 文件： | 总1页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Silicon Epitaxial Transistor
2SB799
Features
World standard miniature package:SOT-89
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
-60
Collector to emitter voltage
Emitter to base voltage
Collector current
-50
V
-5
-0.7
V
A
Collector current(Pulse) *
Total power dissipation
Junction temperature
Storage temperature range
IC
-1.0
A
PT
2
W
Tj
150
Tstg
-55 to +150
* PW 10ms,duty cycle 50%.
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
Symbol
ICBO
Testconditons
Min
Typ
Max
-100
-100
400
Unit
nA
VCB = -60 V, IE = 0
IEBO
VEB = -5.0 V, IC = 0
nA
VCE = -1.0 V, IC = -100 mA
VCE = -1.0 V, IC = -500 mA
90
50
200
120
DC current gain *
hFE
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
VCE(sat) IC = -500mA, IB = -50mA
VBE(sat) IC = -500mA, IB = -50mA
-0.16 -0.4
-0.9 -1.2
V
V
VBE
fT
VCE = -6.0 V, IC = -10 mA
VCE = -6.0 V, IE = 10 mA
-600 -630 -700
mV
MHz
pF
120
25
Cob
VCB = -6.0 V, IE = 0 , f = 1.0 MHz
* Pulsed: PW
350 ìs, duty cycle
2%
hFE Classification
Marking
hFE
MM
90 180
ML
135 270
MK
200 400
1
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