2SB1201-S [KEXIN]

PNP Transistors;
2SB1201-S
型号: 2SB1201-S
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

PNP Transistors

文件: 总3页 (文件大小:1591K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SMD Type  
Transistors  
PNP Transistors  
2SB1201  
TO-252  
Unit: mm  
+0.15  
-0.15  
6.50  
+0.1  
-0.1  
2.30  
+0.8  
-0.7  
+0.2  
5.30  
-0.2  
0.50  
Features  
Low collector-to-emitter saturation voltage.  
Fast switching speed.  
Large current capacity and wide ASO.  
Complementary to 2SD1801  
0.127  
max  
+0.1  
-0.1  
0.80  
0.1  
0.1  
0.60+-  
1 Base  
2.3  
4.60  
+0.15  
-0.15  
2 Collector  
3 Emitter  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Collector - Base Voltage  
Collector - Emitter Voltage  
Emitter - Base Voltage  
Symbol  
Rating  
Unit  
VCBO  
VCEO  
VEBO  
-60  
-50  
-6  
V
Collector Current - Continuous  
Collector Current - Pulse  
I
C
-2  
A
I
CP  
-4  
15  
Collector Power Dissipation  
Tc = 25℃  
P
C
W
0.8  
150  
Junction Temperature  
TJ  
Storage Temperature range  
T
stg  
-55 to 150  
Electrical Characteristics Ta = 25℃  
Parameter  
Symbol  
Test Conditions  
Min  
-60  
-50  
-6  
Typ  
Max  
Unit  
V
Collector- base breakdown voltage  
Collector- emitter breakdown voltage  
Emitter - base breakdown voltage  
Collector-base cut-off current  
Emitter cut-off current  
VCBO  
VCEO  
VEBO  
Ic= -100 μAI  
Ic= -1 mA, RBE=∞  
= -100μAI =0  
CB= -50V , I =0  
EB= -5V , I =0  
E=0  
I
E
C
I
CBO  
EBO  
V
V
E
-0.1  
-0.1  
-0.7  
-1.2  
560  
uA  
V
I
C
Collector-emitter saturation voltage  
Base - emitter saturation voltage  
V
CE(sat)  
BE(sat)  
I
I
C
=-1 A, I  
B
=-50mA  
=-50mA  
-0.3  
-0.9  
V
C
=-1 A, I  
B
V
V
CE= -2V, I  
CE= -2V, I  
C
= -100 mA  
= -1.5 A  
100  
40  
DC current gain  
hFE  
C
Turn-ON Time  
t
on  
60  
450  
30  
See specified Test Circuit  
ns  
Storage Time  
t
stg  
Fall Time  
t
f
Collector output capacitance  
Transition frequency  
C
ob  
T
V
V
CB= -10V, I  
CE= -10V, I  
E
= 0,f=1MHz  
22  
pF  
f
C
= -50mA  
150  
MHz  
Classification of hfe(1)  
Type  
2SB1201-R 2SB1201-S 2SB1201-T 2SB1201-U  
Range  
100-200 140-280 200-400 280-560  
1
www.kexin.com.cn  
SMD Type  
Transistors  
PNP Transistors  
2SB1201  
Switching Time Test Circuit  
Typical Characterisitics  
2
www.kexin.com.cn  
SMD Type  
Transistors  
PNP Transistors  
2SB1201  
Typical Characterisitics  
3
www.kexin.com.cn  

相关型号:

2SB1201-T

PNP Transistors
KEXIN

2SB1201-U

PNP Transistors
KEXIN

2SB1201R

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-252
ETC

2SB1201RTP

Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TP, 3 PIN
ONSEMI

2SB1201S

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-252
ETC

2SB1201S(TP)

TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-251VAR
ONSEMI

2SB1201S(TP-FA)

TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-252VAR
ONSEMI

2SB1201S-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
ONSEMI

2SB1201S-TL-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
ONSEMI

2SB1201T

TRANSISTOR | BJT | PNP | 50V V(BR)CEO | 2A I(C) | TO-252
ETC

2SB1201T(TP)

TRANSISTOR,BJT,PNP,50V V(BR)CEO,2A I(C),TO-251VAR
ONSEMI

2SB1201T-E

Bipolar Transistor (-)50V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
ONSEMI