2SA1923 [KEXIN]
Silicon PNP Transistor; 硅PNP晶体管
| 型号： | 2SA1923 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon PNP Transistor |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon PNP Transistor
2SA1923
TO-252
Unit: mm
6.50+0.15
-0.15
2.30+0.1
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Features
High Voltage:VCBO=-400V
Low Saturation Voltage:VCE(sat)=-1V(Max.)
IC=-100mA,IB=-10mA
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-400
-400
-7
Unit
V
V
V
-0.5
A
Collector Current (Pulse)
Base Current
ICP
-1
A
IB
-0.25
1
A
Collector Dissipation
Tc=25
W
W
PC
10
Junction Temperature
Storage Temperature
Tj
150
Tstg
-55 to 150
1
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SMD Type
Transistors
2SA1923
Electrical Characteristics Ta = 25
Parameter
Collector Cutoff Current
Symbol
ICBO
Testconditons
Min
Typ
Max
-10
-1
Unit
ìA
ìA
V
VCB=-400V, IE=0
Emitter Cutoff Current
IEBO
VEB=-7V, IC=0
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=-10mA, IB=0
-400
140
140
VCE=-5V, IC=-20mA
VCE=-5V, IC=-100mA
IC=-100mA, IB=-10mA
IC=-100mA, IB=-10mA
VCE=-5V, IC=-50mA
VCB=-10V, f=1MHz,IE=0
450
400
-1.0
DC Current Gain
hFE
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Transition Frequency
VCE(sat)
VBE(sat)
fT
-0.4
V
V
-0.76 -0.9
35
18
MHz
pF
Collector Output Capacitance
Cob
Switching Time Turn-on Time
Switching Time Storage Time
Switching Time Fall Time
ton
tstg
tf
0.2
2.3
0.2
ìs
ìs
ìs
2
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