2SA1607-YL4-HF [KEXIN]
PNP Transistors;
| 型号： | 2SA1607-YL4-HF |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总3页 (文件大小：1087K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1607-HF
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Fast switching speed.
High gain-bandwidth product.
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
Low saturation voltage.
+0.1
-0.2
1.9
● Complementary to 2SC4168-HF
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1. Base
2. Emitter
3. Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
-40
Unit
V
Collector-emitter voltage
Emitter-base voltage
Collector current
-20
V
-5
V
-150
-300
-30
mA
mA
mA
mW
Collector current (pulse)
Base current
ICP
IB
Collector dissipation
Junction temperature
Storage temperature
PC
200
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Ic= -100 μA， I =0
Ic= -1 mA， RBE=∞
= -100μA， I =0
CB= -30 V , I =0
EB= -4V , I =0
Min
-40
-20
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
V
V
V
CBO
E
CEO
EBO
I
E
C
I
CBO
EBO
V
V
E
-100
-100
nA
V
I
C
V
CE(sat)
BE(sat)
I
I
C
=-10 mA, I
B
=- 1mA
=- 1mA
-0.07 -0.2
V
C=-10 mA, I
B
-0.75
-1
180
20
h
FE
V
CE= -1V, I
C= -10mA
60
Delay time
td
14
11
Rise time
t
r
20
See specified Test Circuit
ns
Storage time
t
s
80
180
25
Fall time
tf
16
Output capacitance
C
ob
T
V
V
CE= -10V,f=100MHz
CE= -10V, I = -1mA
2.9
400
pF
Transition frequency
f
C
MHz
■ Classification of hfe
Type
Range
Marking
2SA1607-YL3-HF
60-120
2SA1607-YL4-HF
90-180
YL2
F
YL3
F
1
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SMD Type
Transistors
PNP Transistors
2SA1607-HF
■ Typical Characterisitics
I
-- V
CE
I
-- V
BE
C
C
--100
--80
--60
--40
--160
--140
--120
--100
--80
V
CE
=--1V
。
。
。
--60
--40
--20
0
--20
0
I =0
B
0
--0.4
--0.8
--1.2
--1.6
--2.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Collector-to-Emitter Voltage, V
CE
– V
Base-to-Emitter Voltage, V
– V
BE
I
-- V
h
FE
-- I
C
C
CE
--20
--16
--12
--8
1000
7
5
V
CE
=--1V
3
2
。
Ta=75 C
100
7
。
--25 C
。
25 C
5
3
2
--4
0
I =0
B
10
--0.1
0
--4
--8
--12
--16
--20
2
3
5
7
2
3
5
7
2
3
5
7
2 3
--1.0
--10
--100
Collector-to-Emitter Voltage, V
– V
Collector Current, I –mA
C
CE
f
-- I
Cob -- V
CB
T
C
2
2
f=1MHz
V
CE
=--10V
1000
10
7
5
7
5
3
2
3
2
100
7
5
1.0
7
5
3
7
2
3
5
7
2
3
5
7
--100
2
3
7
2
3
5
7
2
3
5
7
--1.0
--10
--1.0
--10
Collector Current, I –mA
Collector-to-Base Voltage, V
-- V
C
CB
2
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1607-HF
■ Typical Characterisitics
V
(sat), V (sat) -- I
BE
SW Time -- I
C
CE
C
1000
3
2
7
V
=--10V
I
/ I =10
B
CC
C
5
I =5I =--5I
C
B1
B2
--1.0
3
2
7
5
3
2
100
7
5
--0.1
7
5
3
2
3
2
10
7
--0.01
--1.0
5
--1.0
2
3
5
7
2
3
5
7
2
2
3
5
7
2
3
5
7
2
3
--10
--100
--10
--100
Collector Current, I –mA
Collector Current, I –mA
C
C
P
-- Ta
C
240
200
160
120
80
40
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
C
Switching Time Test Circuit
PW=10 s
D.C. 2.5%
Tr. Tf=1ns
I
B1
I
B2
1k
OUTPUT
2k
INPUT
50
R
+
V
B
R
5k
+
100 F
470 F
V
=--5V
V
=10V
CC
BE
5I = --5I = I =50mA
B1 B2
C
For PNP, the polarity is reversed.
.
3
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