2SA1566 [KEXIN]
Silicon PNP Epitaxial; PNP硅外延
| 型号： | 2SA1566 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | Silicon PNP Epitaxial |
| 文件： | 总1页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
Silicon PNP Epitaxial
2SA1566
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
Low frequency amplifier.
1
2
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-120
Unit
V
V
-120
-5
V
-100
mA
mW
Collector power dissipation
Junction temperature
PC
150
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
-120
-120
-5
Typ
Max
Unit
V
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
V(BR)CBO IC = -10 ìA, IE = 0
V(BR)CEO
V
IC = -1 mA, RBE =
V(BR)EBO IE = -10 ìA, IC = 0
V
ICBO
IEBO
hFE
VCB = -70 V, IE = 0
VEB = -2 V, IC = 0
-0.1
-0.1
800
-0.15
1.2
ìA
ìA
Emitter cutoff current
DC current transfer ratio
VCE = -12 V,IC = -2 mA
250
Collector to emitter saturation voltage
Base to emitter saturation voltage
VCE(sat) IC = -10 mA,IB = -1 mA
VBE(sat) IC = -10 mA,IB = -1 mA
V
V
hFE Classification
Marking
Rank
JID
D
JIE
E
hFE
250 500
400 800
1
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