2SA1566-E [KEXIN]
PNP Transistors;
| 型号： | 2SA1566-E |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 光电二极管 |
| 文件： | 总3页 (文件大小：852K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1566
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● Low frequency amplifier
1
2
+0.02
-0.02
+0.1
-0.1
0.15
0.95
+0.1
-0.2
1.9
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Symbol
Rating
Unit
V
VCBO
VCEO
VEBO
-120
-120
-5
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
I
C
-100
mA
P
C
150
mW
T
J
150
℃
Storage Temperature range
Tstg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -100 μA， I =0
Ic= -1 mA，RBE= ∞
= -100μA， I =0
CB= -70 V , I =0
EB= -4V , I =0
Min
-120
-120
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
VCBO
VCEO
VEBO
E
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-0.15
-1
uA
V
Emitter cut-off current
I
C
Collector-emitter saturation voltage (Note.1)
V
CE(sat)
BE(sat)
I
I
C
=-10 mA, I =-1 mA
B
Base - emitter saturation voltage
(Note.1)
V
C=-10 mA, IB=-1 mA
DC current gain
(Note.1)
h
FE
V
CE= -12V, I
C= -2mA
250
800
Note.1: Pulse test
■ Classification of hfe
Type
Range
Marking
2SA1566-D
250-500
JID
2SA1566-E
400-800
JIE
1
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SMD Type
Transistors
PNP Transistors
2SA1566
■ Typical Characterisitics
Typical Output Characteristics
Pulse
Maximum Collector Dissipation Curve
–10
–8
–6
–4
–2
150
100
50
–2 µA
IB = 0
0
–4
–8
–12
–16
–20
0
50
100
150
。
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta ( C)
DC Current Transfer Ratio vs.
Collector Current
Typical Transfer Characteristics
1,000
–100
–10
。
VCE = –6 V
Pulse
Ta = 75 C
。
Ta = 75 C
–25
25
300
100
25
–25
–1.0
–0.1
30
10
VCE = –12 V
Pulse
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1
–3
–10
–30
–100
Base to Emitter Voltage VBE (V)
Collector Current IC (mA)
2
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1566
■ Typical Characterisitics
Collector to Emitter Saturation Voltage vs.
Collector Current
Gain Bandwidth Product vs.
Collector Current
1,000
500
–1.0
IC = 10 IB
Pulse
VCE = –6 V
Pulse
–0.3
–0.1
200
100
50
Ta = 75ϒC
–25
25
–0.03
–0.01
20
10
–1
–3
–10
–30
–100
–0.5 –1.0 –2
–5 –10 –20
–50
Collector Current IC (mA)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
100
f = 1 MHz
IE = 0
30
10
3
1
–1
–3
–10
–30
–100
Collector to Base Voltage VCB (V)
3
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