2SA1362-Y [KEXIN]
PNP Transistors;
| 型号： | 2SA1362-Y |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors 开关 光电二极管 晶体管 |
| 文件： | 总2页 (文件大小：990K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
PNP Transistors
2SA1362
SOT-23
Unit: mm
+0.1
-0.1
2.9
0.4
+0.1
-0.1
3
Features
Suitable for driver stage of small motor.
Small package.
1
2
+0.1
-0.1
+0.05
-0.01
0.95
0.1
+0.1
-0.1
1.9
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Rating
-15
Unit
V
-15
V
-5
V
-800
-160
200
150
mA
mA
mW
Base current
IB
Collector dissipation
Junction temperature
Storage temperature
PC
Tj
Tstg
-55 to +150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
-15
-15
-5
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
V
V
V
CBO
Ic= -100 μA， I
Ic= -10 mA， I
= -100μA， I
CB= -15 V , I =0
EB= -5V , I =0
E
=0
=0
=0
CEO
EBO
B
I
E
C
I
CBO
EBO
V
V
E
-100
-100
-0.2
-1.2
-0.8
400
nA
V
I
C
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-400 mA, I
B
B
=- 8mA
=- 8mA
V
C
=-400 mA, I
V
BE
V
CE= -1V,
-0.5
120
40
IC= -10 mA
V
V
V
V
CE= -1V, I
CE= -1V, I
C
= -100mA
= -800mA
DC current gain
hFE
C
Common base output capacitance
Transition frequency
C
ob
T
CB= -10V, I
E
= 0,f=1MHz
13
pF
f
CB= -5V,I =-10mA
C
120
MHz
■ Classification of hfe
Type
Range
Marking
2SA1362-Y
120-240
AEY
2SA1362-G
200-400
AEG
1
www.kexin.com.cn
SMD Type
Transistors
PNP Transistors
2SA1362
■ Typical Characterisitics
2
www.kexin.com.cn
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